公开(公告)号：US06892582B1

公开(公告)日：2005-05-17

申请号：US09936480

申请日：1999-08-20

申请人： Shinya Satou ,  Satoshi Shimada ,  Atsuo Watanabe ,  Yasuo Onose ,  Seiji Kuryu ,  Atsushi Miyazaki ,  Junichi Horie ,  Naohiro Momma

发明人： Shinya Satou ,  Satoshi Shimada ,  Atsuo Watanabe ,  Yasuo Onose ,  Seiji Kuryu ,  Atsushi Miyazaki ,  Junichi Horie ,  Naohiro Momma

IPC分类号： B81B3/00 ,  B81B7/00 ,  G01L7/08 ,  G01L9/00 ,  H01L21/00

CPC分类号： B81C1/00333 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L9/0042 ,  G01L9/0073

摘要： The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, thereby sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film.This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.

摘要翻译： 本发明的目的是提出一种蚀刻通道密封结构，其特征在于对根据牺牲层蚀刻技术制造的压力传感器中的防潮性和抗隔膜的时间变化具有优异的防渗性，并且提供一种特征在于优异的压力传感器 生产力和耐久性。 在通过牺牲层蚀刻技术形成非常小的间隙之后，通过CVD技术等沉积氧化硅膜，从而密封蚀刻通道。 此外，形成多晶硅等的不渗透性薄膜以覆盖氧化物膜。 这允许在根据牺牲层蚀刻技术产生的压力传感器中简化蚀刻通道密封结构，并且防止水分进入空腔，从而改善耐湿性。 此外，具有小膜应力的密封材料减小了隔膜的时间变形。

公开(公告)号：US06941815B2

公开(公告)日：2005-09-13

申请号：US10173732

申请日：2002-06-19

申请人： Yasuo Onose ,  Junichi Horie ,  Seiji Kuryu ,  Akihiko Saito ,  Norio Ichikawa ,  Atsuo Watanabe ,  Satoshi Shimada

发明人： Yasuo Onose ,  Junichi Horie ,  Seiji Kuryu ,  Akihiko Saito ,  Norio Ichikawa ,  Atsuo Watanabe ,  Satoshi Shimada

IPC分类号： G01L9/00 ,  H01L29/84 ,  G01L9/04

CPC分类号： G01L9/0073 ,  G01L9/0042

摘要： A sensor with built-in circuits can be improved in the stability of the operation or characteristics. A circuit region and a sensor region are covered by a passivation film. The sensor region is partially covered by the passivation film. The sensor region and circuit region are protected by the passivation film, and an effect of the passivation film on the mechanical displacement of a diaphragm portion can be alleviated so that the sensor with built-in circuits may be improved in the stability of the operation or characteristics.

摘要翻译： 具有内置电路的传感器可以提高操作的稳定性或特性。 电路区域和传感器区域被钝化膜覆盖。 传感器区域被钝化膜部分覆盖。 传感器区域和电路区域被钝化膜保护，并且可以减轻钝化膜对隔膜部分的机械位移的影响，使得具有内置电路的传感器可以在操作的稳定性方面得到改善，或者 特点

公开(公告)号：US06167761A

公开(公告)日：2001-01-02

申请号：US09103612

申请日：1998-06-24

申请人： Keiji Hanzawa ,  Akio Yasukawa ,  Satoshi Shimada ,  Seikou Suzuki ,  Akihiko Saito ,  Masahiro Matsumoto ,  Atsushi Miyazaki ,  Norio Ichikawa ,  Junichi Horie ,  Seiji Kuryu

发明人： Keiji Hanzawa ,  Akio Yasukawa ,  Satoshi Shimada ,  Seikou Suzuki ,  Akihiko Saito ,  Masahiro Matsumoto ,  Atsushi Miyazaki ,  Norio Ichikawa ,  Junichi Horie ,  Seiji Kuryu

IPC分类号： G01L912

CPC分类号： G01L9/0073

摘要： In a capacitance type pressure sensor, a diaphragm is formed of a fragile material using an impurity-diffused monocrystal silicon and constitutes a stable pressure-responsive structure which does not undergo a plastic deformation. Between the diaphragm and a movable electrode is formed an oxide film to diminish stray capacitance between the movable electrode and a substrate and also between the movable electrode and a impurity-diffused layer. The oxide film and the movable electrode are each divided into plural regions so that the divided regions of the movable electrode are formed on the divided regions of the oxide film, thereby diminishing stress strain induced by a difference in therm expansion coefficient among the diaphragm, oxide film and movable electrode. The upper surface of a fixed electrode is covered with a structure for the fixed electrode which structure is formed by an insulating polycrystal silicon film not doped with impurity whereby the rigidity of the electrode is enhanced and it is possible to diminish a leak current.

摘要翻译： 在电容式压力传感器中，使用杂质扩散的单晶硅由脆性材料形成隔膜，构成不发生塑性变形的稳定的压力响应结构。 在隔膜和可动电极之间形成氧化膜，以减小可动电极和基板之间以及可移动电极和杂质扩散层之间的杂散电容。 氧化物膜和可动电极分别分成多个区域，使得可动电极的分割区域形成在氧化膜的分割区域上，从而减小由隔膜，氧化物中的热膨胀系数差引起的应力应变 薄膜和可动电极。 固定电极的上表面被固定电极的结构覆盖，该结构由不掺杂杂质的绝缘多晶硅膜形成，由此电极的刚性增强并且可以减小漏电流。

公开(公告)号：US06640642B1

公开(公告)日：2003-11-04

申请号：US09653808

申请日：2000-09-01

申请人： Yasuo Onose ,  Atsuo Watanabe ,  Seiji Kuryu ,  Shinya Satou ,  Junichi Horie ,  Satoshi Shimada

发明人： Yasuo Onose ,  Atsuo Watanabe ,  Seiji Kuryu ,  Shinya Satou ,  Junichi Horie ,  Satoshi Shimada

IPC分类号： G01L912

CPC分类号： G01L9/0042 ,  G01L1/146 ,  G01L9/0073

摘要： A pressure sensor of electric capacitance type which includes a plurality of pressure sensor units connected in parallel with one another and each formed on a substrate by an electrode, a cavity region and a diaphragm having an electrically conductive film which is disposed in opposition to the electrode with the cavity region intervening between the electrode and the diaphragm, wherein diaphragm fixing portions are disposed internally of the cavity region so that a single sheet of the diaphragm is partitionarily and regionally allotted to regions of the plural pressure sensor units, respectively. With this structure of the capacitance-type pressure sensor, ineffective region for capacitance detection is minimized and hence the parasitic capacitance can be reduced with the detection accuracy of the sensor being improved.

摘要翻译： 一种电容式压力传感器，其包括彼此并联连接的多个压力传感器单元，每个压力传感器单元通过电极形成在基板上，空腔区域和具有导电膜的隔膜，所述导电膜设置成与电极相对设置 其中腔区插入在电极和隔膜之间，其中隔膜固定部分设置在空腔区域的内部，使得隔膜的单片分别地分区地分配到多个压力传感器单元的区域。 利用电容型压力传感器的这种结构，电容检测的无效区域被最小化，因此可以随着传感器的检测精度提高而降低寄生电容。

公开(公告)号：US06377056B1

公开(公告)日：2002-04-23

申请号：US09384289

申请日：1999-08-26

申请人： Keiji Hanzawa ,  Masahiro Matsumoto ,  Satoshi Shimada ,  Akihiko Saito ,  Yasuo Onose ,  Norio Ichikawa ,  Junichi Horie ,  Seiji Kuryu

发明人： Keiji Hanzawa ,  Masahiro Matsumoto ,  Satoshi Shimada ,  Akihiko Saito ,  Yasuo Onose ,  Norio Ichikawa ,  Junichi Horie ,  Seiji Kuryu

IPC分类号： G01R2726

CPC分类号： G01P15/125 ,  G01D5/24 ,  G01L9/0073 ,  G01L9/12

摘要： Dynamic quantitative displacement is converted stably and straight into voltage (D.C. output) by using a high speed detection driving frequency without restricting a response of an operational amplifier. When a dynamic quantity detection electrostatic capacitance changes according to a dynamic quantity, electric charges stored in this element and in a reference electrostatic capacitance become unbalanced to produce a difference value, and an output of an operational amplifier changes according to the difference in electric charge quantity. However, the output becomes finally stable when the electric charges in the dynamic quantity detection electrostatic capacitance and in the reference electrostatic capacitance become equal. The output is proportional to a reciprocal of the dynamic quantity detection electrostatic capacitance and it is a D.C. voltage. Further, output without depending on integration feedback capacitance (feedback condenser) CF can be obtained.

摘要翻译： 通过使用高速检测驱动频率将动态定量位移稳定地转换成电压（直流输出），而不限制运算放大器的响应。 当动态量检测静电电容根据动态量而变化时，存储在该元件中的电荷和参考静电电容变得不均衡以产生差值，并且运算放大器的输出根据电荷量的差异而变化 。 然而，当动态量检测静电电容和参考静电电容中的电荷变得相等时，输出最终稳定。 输出与动态量检测静电电容的倒数成比例，为直流电压。 此外，可以获得不依赖积分反馈电容（反馈电容器）CF的输出。

公开(公告)号：US20050132814A1

公开(公告)日：2005-06-23

申请号：US11049872

申请日：2005-02-04

申请人： Shinya Satou ,  Satoshi Shimada ,  Atsuo Watanabe ,  Yasuo Onose ,  Seiji Kuryu ,  Atsushi Miyazaki ,  Junichi Horie ,  Naohiro Momma

发明人： Shinya Satou ,  Satoshi Shimada ,  Atsuo Watanabe ,  Yasuo Onose ,  Seiji Kuryu ,  Atsushi Miyazaki ,  Junichi Horie ,  Naohiro Momma

IPC分类号： B81B3/00 ,  B81B7/00 ,  G01L7/08 ,  G01L9/00 ,  H01L21/00

CPC分类号： B81C1/00333 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00293 ,  B81C2203/0145 ,  G01L9/0042 ,  G01L9/0073

摘要： The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, there by sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film. This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.

摘要翻译： 本发明的目的是提出一种蚀刻通道密封结构，其特征在于对根据牺牲层蚀刻技术制造的压力传感器中的防潮性和抗隔膜的时间变化具有优异的防渗性，并且提供了一种特征在于优异的压力传感器 生产力和耐久性。 在通过牺牲层蚀刻技术形成非常小的间隙之后，通过密封蚀刻通道，通过CVD技术等沉积氧化硅膜。 此外，形成多晶硅等的不渗透性薄膜以覆盖氧化物膜。 这允许在根据牺牲层蚀刻技术产生的压力传感器中简化蚀刻通道密封结构，并且防止水分进入空腔，从而改善耐湿性。 此外，具有小膜应力的密封材料减小了隔膜的时间变形。

公开(公告)号：US06877383B2

公开(公告)日：2005-04-12

申请号：US10247637

申请日：2002-09-20

申请人： Junichi Horie ,  Yasuo Onose ,  Norio Ichikawa ,  Seiji Kuryu ,  Satoshi Shimada ,  Akihiko Saito ,  Keiji Hanzawa ,  Masahiro Matsumoto ,  Hiroshi Moriya ,  Akio Yasukawa ,  Atsushi Miyazaki

发明人： Junichi Horie ,  Yasuo Onose ,  Norio Ichikawa ,  Seiji Kuryu ,  Satoshi Shimada ,  Akihiko Saito ,  Keiji Hanzawa ,  Masahiro Matsumoto ,  Hiroshi Moriya ,  Akio Yasukawa ,  Atsushi Miyazaki

IPC分类号： G01L9/00 ,  G01L9/12

CPC分类号： G01L9/0073

摘要： By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 μm, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.

摘要翻译： 通过以较少的工艺密封隔膜，降低成本，减少由于剩余应力引起的变形，提出了一种稳定可靠的压力传感器结构。 压力传感器测量误差小，浮动电容和漏电流小，特性好。 作为实现上述目的的手段，用通过LPCVD方法沉积的氧化硅膜密封多晶硅隔膜，然后完全覆盖。 隔膜被放置在半导体衬底的表面上，具有0.15-1.3μm的几乎恒定的间隙，并且由于剩余应力而具有变形减小装置的不同级别的构造。