摘要:
An organic photoelectric device may include an anode and a cathode configured to face each other, and an active layer between the anode and cathode, wherein the active layer includes a quinacridone derivative and a thiophene derivative having a cyanovinyl group.
摘要:
A photodiode may include an anode, a cathode, a photoelectric conversion layer between the anode and the cathode, and a buffer layer between the photoelectric conversion layer and the anode. The buffer layer may have a dual-layered structure including an organic layer and an inorganic layer.
摘要:
An organic photoelectric device may include an anode and a cathode configured to face each other, and an active layer between the anode and cathode, wherein the active layer includes a quinacridone derivative and a thiophene derivative having a cyanovinyl group.
摘要:
A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.
摘要:
A quinacridone derivative may be represented by Chemical Formula 1, and a photoactive layer and photoelectric conversion device may include the same.
摘要:
Disclosed is an electrochromic device that includes a first electrode and a second electrode facing each other, an electrochromic layer between the first electrode and the second electrode, and an electrolyte between the first electrode and the second electrode and being in contact with the electrochromic layer. The electrochromic layer may include a plurality of oxide semiconductor particles, a metal oxide on the surface of the oxide semiconductor particles, and an electrochromic material. An energy bandgap of the oxide semiconductor particles is in a range of about 3 eV to about 5 eV and an energy bandgap of the metal oxide is in a range of about 3 eV to about 5 eV, and a difference of conduction band energy levels of the oxide semiconductor particles and the metal oxide is about 0.5 eV or less. A method of manufacturing the electrochromic device may also be provided.
摘要:
A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.
摘要:
A quinacridone derivative may be represented by Chemical Formula 1, and a photoactive layer may include the same. A photoelectric conversion device may include a first electrode, a second electrode spaced apart from and configured to face the first electrode, and the photoactive layer including the quinacridone derivative between the first electrode and the second electrode.
摘要:
A photodiode may include an anode, a cathode, a photoelectric conversion layer between the anode and the cathode, and a buffer layer between the photoelectric conversion layer and the anode. The buffer layer may have a dual-layered structure including an organic layer and an inorganic layer.
摘要:
Disclosed is ink for an electrochromic device including an electrochromic material, a metal salt, and a solvent. Disclosed also is an electrochromic device that includes a first electrode and a second electrode facing each other, an auxiliary electrode disposed on the first electrode or the second electrode, an electrochromic layer applied on the auxiliary electrode, and an electrolyte interposed between the first electrode and second electrode, wherein the electrochromic layer is formed using ink including an electrochromic material and a metal salt. Disclosed also is a method of manufacturing the electrochromic device.