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公开(公告)号：US08999526B2
公开(公告)日：2015-04-07
申请号：US13446302
申请日：2012-04-13
申请人： Kwang Hee Lee , Kyu Sik Kim , Kyung Bae Park , Dong-Seok Leem , Seon Jeong Lim
发明人： Kwang Hee Lee , Kyu Sik Kim , Kyung Bae Park , Dong-Seok Leem , Seon Jeong Lim
CPC分类号： H01L51/0072 , H01L51/0068 , H01L51/0074 , H01L51/4253 , Y10S428/917
摘要： An organic photoelectric device may include an anode and a cathode configured to face each other, and an active layer between the anode and cathode, wherein the active layer includes a quinacridone derivative and a thiophene derivative having a cyanovinyl group.
摘要翻译： 有机光电装置可以包括被配置为彼此面对的阳极和阴极以及阳极和阴极之间的有源层，其中活性层包括喹吖啶酮衍生物和具有氰基乙烯基的噻吩衍生物。
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公开(公告)号：US08933438B2
公开(公告)日：2015-01-13
申请号：US13461250
申请日：2012-05-01
申请人： Dong-Seok Leem , Kyu Sik Kim , Kyung Bae Park , Kwang Hee Lee , Seon-Jeong Lim
发明人： Dong-Seok Leem , Kyu Sik Kim , Kyung Bae Park , Kwang Hee Lee , Seon-Jeong Lim
CPC分类号： H01L51/4246 , H01L51/4273 , Y02E10/549
摘要： A photodiode may include an anode, a cathode, a photoelectric conversion layer between the anode and the cathode, and a buffer layer between the photoelectric conversion layer and the anode. The buffer layer may have a dual-layered structure including an organic layer and an inorganic layer.
摘要翻译： 光电二极管可以包括阳极，阴极，阳极和阴极之间的光电转换层，以及光电转换层和阳极之间的缓冲层。 缓冲层可以具有包括有机层和无机层的双层结构。
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公开(公告)号：US20130112947A1
公开(公告)日：2013-05-09
申请号：US13446302
申请日：2012-04-13
申请人： Kwang Hee LEE , Kyu Sik KIM , Kyung Bae PARK , Dong-Seok LEEM , Seon Jeong LIM
发明人： Kwang Hee LEE , Kyu Sik KIM , Kyung Bae PARK , Dong-Seok LEEM , Seon Jeong LIM
CPC分类号： H01L51/0072 , H01L51/0068 , H01L51/0074 , H01L51/4253 , Y10S428/917
摘要： An organic photoelectric device may include an anode and a cathode configured to face each other, and an active layer between the anode and cathode, wherein the active layer includes a quinacridone derivative and a thiophene derivative having a cyanovinyl group.
摘要翻译： 有机光电装置可以包括被配置为彼此面对的阳极和阴极以及阳极和阴极之间的有源层，其中活性层包括喹吖啶酮衍生物和具有氰基乙烯基的噻吩衍生物。
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公开(公告)号：US20130062595A1
公开(公告)日：2013-03-14
申请号：US13354980
申请日：2012-01-20
申请人： Kyung Bae Park , Kyu Sik Kim , Yong Wan Jin , Kwang Hee Lee , Dong-Seok Leem , Seon-Jeong Lim
发明人： Kyung Bae Park , Kyu Sik Kim , Yong Wan Jin , Kwang Hee Lee , Dong-Seok Leem , Seon-Jeong Lim
IPC分类号： H01L51/46
CPC分类号： H01L51/4253 , H01L51/426 , Y02E10/549
摘要： A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.
摘要翻译： 根据示例性实施例的光电二极管包括在阳极和阴极之间的阳极，阴极和本征层。 本征层包括P型半导体和N型半导体，并且P型半导体和N型半导体的组成比在本征层内根据本征层与阳极和 阴极。
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公开(公告)号：US20130049152A1
公开(公告)日：2013-02-28
申请号：US13409878
申请日：2012-03-01
IPC分类号： H01L31/0232
CPC分类号： H01L31/072 , B82Y10/00 , H01L27/307 , H01L31/101 , H01L51/0037 , H01L51/0046 , H01L51/0068 , H01L51/0078 , H01L51/4246 , H01L51/4273 , H01L2251/308 , Y02E10/549
摘要： According to example embodiments, a photoelectric conversion device includes a first electrode including a light-receiving surface, a second electrode spaced apart from the first electrode and facing the first electrode, and an auxiliary layer between the second electrode and an exciton producing layer. The first electrode may be on the second electrode. The exciton producing layer may be between the first electrode and the second electrode. The exciton producing layer may be spaced apart from the second electrode by a distance corresponding to one of a crest and a trough of a standing wave of light to be converted into electricity.
摘要翻译： 根据示例性实施例，光电转换装置包括包括受光面的第一电极，与第一电极间隔开并面向第一电极的第二电极，以及在第二电极和激子产生层之间的辅助层。 第一电极可以在第二电极上。 激子产生层可以在第一电极和第二电极之间。 激子产生层可以与第二电极隔开一定距离，该距离对应于要转换为电的光的驻波的波峰和波谷中的一个。
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6.发明申请QUINACRIDONE DERIVATIVE, AND PHOTOACTIVE LAYER AND PHOTOELECTRIC CONVERSION DEVICE INCLUDING SAME 有权喹吖啶酮衍生物，以及包含其的光敏层和光电转换装置公开(公告)号：US20130048958A1
公开(公告)日：2013-02-28
申请号：US13531724
申请日：2012-06-25
申请人： Seon-Jeong Lim , Kyu Sik Kim , Kwang Hee Lee , Dong-Seok Leem , Kyung Bae Park
发明人： Seon-Jeong Lim , Kyu Sik Kim , Kwang Hee Lee , Dong-Seok Leem , Kyung Bae Park
IPC分类号： C07D471/04 , H01L51/54 , H01L51/30 , H01L51/46
CPC分类号： H01L51/0062 , C07D471/06 , C07D487/06 , H01L51/424 , Y02E10/549
摘要： A quinacridone derivative may be represented by Chemical Formula 1, and a photoactive layer and photoelectric conversion device may include the same.
摘要翻译： 喹吖啶酮衍生物可以由化学式1表示，光活性层和光电转换装置可以包括它们。
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7.发明申请PIXEL OF A MULTI-STACKED CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权多层CMOS图像传感器的像素及其制造方法公开(公告)号：US20120193689A1
公开(公告)日：2012-08-02
申请号：US13205127
申请日：2011-08-08
申请人： Kyung-bae Park , Kyu-sik Kim , Yong-wan Jin , Woong Choi , Kwang-hee Lee , Do-hwan Kim
发明人： Kyung-bae Park , Kyu-sik Kim , Yong-wan Jin , Woong Choi , Kwang-hee Lee , Do-hwan Kim
IPC分类号： H01L31/113 , H01L31/18
CPC分类号： H01L27/307 , H01L23/585 , H01L27/1214 , H01L27/14609 , H01L27/14632 , H01L27/14636 , H01L27/14647 , H01L27/14667 , H01L27/14685 , H01L27/14687 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.
摘要翻译： 提供了多层互补金属氧化物半导体（CMOS）图像传感器的像素，以及包括可以包括依次层叠的第一至第三光电二极管层的光接收单元的图像传感器的制造方法，集成电路 IC），其形成在所述第一至第三光电二极管层之下和之下形成的电极层，以及将形成在所述第一至第三光电二极管层之下的电极层与所述第一至第三光电二极管层之间形成的电极层的接触插塞 晶体管的IC。
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公开(公告)号：US20120175597A1
公开(公告)日：2012-07-12
申请号：US13234702
申请日：2011-09-16
申请人： Kyu-sik Kim
发明人： Kyu-sik Kim
CPC分类号： H01L27/307 , B82Y10/00 , H01L51/0037 , H01L51/0046 , H01L51/0053 , H01L51/0078 , H01L51/0081 , H01L51/424 , H01L51/4253 , H01L51/4293
摘要： An image sensor and a method of manufacturing the same. The image sensor includes a plurality of photoelectric conversion units that are horizontally arranged and selectively emit electric signals by absorbing color beams.
摘要翻译： 一种图像传感器及其制造方法。 图像传感器包括水平布置的多个光电转换单元，并且通过吸收色光束选择性地发射电信号。
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9.发明申请Organic photoelectric conversion film and photoelectric conversion device having the same 审中-公开有机光电转换膜和具有该光电转换膜的光电转换装置公开(公告)号：US20090229668A1
公开(公告)日：2009-09-17
申请号：US12153887
申请日：2008-05-27
申请人： Kyu-Sik Kim , Sang-Cheol Park , Jung-Gyu Nam , Masahiro Hiramoto
发明人： Kyu-Sik Kim , Sang-Cheol Park , Jung-Gyu Nam , Masahiro Hiramoto
IPC分类号： H01L51/46
CPC分类号： H01L51/4253 , B82Y10/00 , H01L51/0046 , H01L51/0053 , H01L51/424 , Y02E10/549 , Y02P70/521
摘要： Provided are an organic photoelectric conversion film and a photoelectric conversion device having the organic photoelectric conversion film. The organic photoelectric conversion film includes a p-type substance layer including rubrene and an n-type substance layer formed on the p-type substance layer and including fullerene or fullerene derivative.
摘要翻译： 提供了具有有机光电转换膜的有机光电转换膜和光电转换装置。 有机光电转换膜包括在p型物质层上形成的包括红荧烯和n型物质层的p型物质层，并且包括富勒烯或富勒烯衍生物。
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公开(公告)号：US20090179291A1
公开(公告)日：2009-07-16
申请号：US12125718
申请日：2008-05-22
申请人： Jung-gyu NAM , Sang-cheol PARK , Kyu-sik KIM , Young-jun PARK
发明人： Jung-gyu NAM , Sang-cheol PARK , Kyu-sik KIM , Young-jun PARK
IPC分类号： H01L31/0296
CPC分类号： H01L31/101 , H01L27/14609 , H01L27/14647 , H01L27/14692 , H01L31/0322 , Y02E10/541
摘要： A stack-type image sensor using a compound semiconductor. The stack-type image sensor includes a stack of photoelectric conversion units which are sequentially arranged in a light incident direction and which absorb light in ascending order of a wavelength from shortest to longest.
摘要翻译： 使用化合物半导体的堆叠型图像传感器。 堆叠型图像传感器包括沿光入射方向依次布置并以从最短到最长的波长的升序吸收光的光电转换单元的堆叠。
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