公开(公告)号：US20120168899A1

公开(公告)日：2012-07-05

申请号：US13101424

申请日：2011-05-05

Applicant: Hyung-Hwan KIM ,  Seong-Su Lim ,  Sung-Eun Park ,  Seung-Seok Pyo ,  Min-Cheol Kang

Inventor： Hyung-Hwan KIM ,  Seong-Su Lim ,  Sung-Eun Park ,  Seung-Seok Pyo ,  Min-Cheol Kang

IPC: H01L29/06 ,  H01L21/28

CPC classification number: H01L29/0649 ,  H01L21/7682 ,  H01L21/76897 ,  H01L23/5222 ,  H01L23/53295 ,  H01L27/10855 ,  H01L27/10885 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a plurality of first conductive patterns separated by a damascene pattern, a second conductive pattern buried in the damascene pattern, and a spacer including an air gap between the second conductive pattern and the first conductive patterns.

Abstract translation: 半导体器件包括由镶嵌图案分隔开的多个第一导电图案，埋在镶嵌图案中的第二导电图案，以及在第二导电图案和第一导电图案之间包括气隙的间隔件。

公开(公告)号：US08697525B2

公开(公告)日：2014-04-15

申请号：US13101424

申请日：2011-05-05

Applicant: Hyung-Hwan Kim ,  Seong-Su Lim ,  Sung-Eun Park ,  Seung-Seok Pyo ,  Min-Cheol Kang

Inventor： Hyung-Hwan Kim ,  Seong-Su Lim ,  Sung-Eun Park ,  Seung-Seok Pyo ,  Min-Cheol Kang

IPC: H01L21/336

CPC classification number: H01L29/0649 ,  H01L21/7682 ,  H01L21/76897 ,  H01L23/5222 ,  H01L23/53295 ,  H01L27/10855 ,  H01L27/10885 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a plurality of first conductive patterns separated by a damascene pattern, a second conductive pattern buried in the damascene pattern, and a spacer including an air gap between the second conductive pattern and the first conductive patterns.

Abstract translation: 半导体器件包括由镶嵌图案分隔开的多个第一导电图案，埋在镶嵌图案中的第二导电图案，以及在第二导电图案和第一导电图案之间包括气隙的间隔件。

公开(公告)号：US5926711A

公开(公告)日：1999-07-20

申请号：US992311

申请日：1997-12-23

Applicant: Sang Ho Woo ,  Seong Su Lim ,  Il Keoun Han

Inventor： Sang Ho Woo ,  Seong Su Lim ,  Il Keoun Han

IPC: H01L21/8247 ,  H01L21/02 ,  H01L21/28 ,  H01L21/8242 ,  H01L21/8244 ,  H01L27/108 ,  H01L27/11 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L28/84 ,  H01L21/28273 ,  H01L29/42324 ,  Y10S438/964

Abstract: This invention discloses a method of forming an electrode of semiconductor device. In the present invention, an amorphous silicon film is formed on a substrate, and silicon seeds are formed on the silicon film. Thereinafter, the heat treatment is performed for growing, thereby forming an hemispherical roughness structure on surface of said charge storage electrode and increasing a surface area in unit area.

Abstract translation: 本发明公开了一种形成半导体器件的电极的方法。 在本发明中，在基板上形成非晶硅膜，在硅膜上形成硅晶种。 以下，对生长进行热处理，从而在所述电荷存储电极的表面上形成半球状的粗糙结构，增加单位面积的表面积。