摘要:
An embedded touch display panel including a first substrate and a second substrate is provided. The first substrate having a displaying region and a sensing region includes a stack structure, a first conductive layer and a first alignment layer. The stack structure disposed on the first substrate within the sensing region includes a protruding structure and a first rough structure disposed on the protruding structure. The first conductive layer conformally disposed on the stack structure has a first rough surface. The first rough surface is exposed from the first alignment layer that covers the first conductive layer. The second substrate includes a second conductive layer and a second alignment layer. The second conductive layer whose position corresponds to the sensing region is disposed on the second structure. A portion of the second conductive layer corresponding to the first rough surface is exposed from the second alignment layer covering thereon.
摘要:
An embedded touch display panel including a first substrate and a second substrate is provided. The first substrate having a displaying region and a sensing region includes a stack structure, a first conductive layer and a first alignment layer. The stack structure disposed on the first substrate within the sensing region includes a protruding structure and a first rough structure disposed on the protruding structure. The first conductive layer conformally disposed on the stack structure has a first rough surface. The first rough surface is exposed from the first alignment layer that covers the first conductive layer. The second substrate includes a second conductive layer and a second alignment layer. The second conductive layer whose position corresponds to the sensing region is disposed on the second structure. A portion of the second conductive layer corresponding to the first rough surface is exposed from the second alignment layer covering thereon.
摘要:
A method for fabricating a color filter substrate including the following procedures is provided. First, a substrate is provided and a color filter layer is formed thereon. Next, a plurality of sensing spacers is formed on a part of the color filter layer. Then, a planarization layer is formed to cover the color filter layer and expose the sensing spacers. Next, an electrode layer is formed to cover the planarization layer and the sensing spacers. After that, a plurality of main spacers is formed on a part of the electrode layer excluding disposing regions of the sensing spacers, wherein a step height is formed between the main spacers and the electrode layer above sensing spacers.
摘要:
A method for fabricating a color filter substrate including the following procedures is provided. First, a substrate is provided and a color filter layer is formed thereon. Next, a plurality of sensing spacers is formed on a part of the color filter layer. Then, a planarization layer is formed to cover the color filter layer and expose the sensing spacers. Next, an electrode layer is formed to cover the planarization layer and the sensing spacers. After that, a plurality of main spacers is formed on a part of the electrode layer excluding disposing regions of the sensing spacers, wherein a step height is formed between the main spacers and the electrode layer above sensing spacers.
摘要:
A touch panel includes a first base having a first portion and a second portion; a first electrode disposed on the first base; a second base opposite to the first base; a second electrode disposed on the second case; and a sealant substantially disposed on the boundary of the first base to connect the first base and the second base, wherein at lease a part of the second portion is located between active area and the sealant, and the thickness of the second portion is smaller than that of the first portion.
摘要:
A semiconductor device includes a first well region of a first conductivity, a second well region of a second conductivity type, a source region of the second conductivity type within the first well region, and a drain region of the second conductivity type at least partially within the second well region. A well contact to the first well region is coupled to the source. A third doped region of the first conductivity type and a fourth doped region of the second conductivity type are located in the second well region. A first transistor includes the third doped region, the second well region, and the first well region. The first transistor is coupled to a switch device. A second transistor includes the second well region, the first well region, and the source region. The first and the second transistors are configured to provide a current path during an ESD event.
摘要:
An electrophoresis display panel includes a plurality of first sub-pixels, a plurality of second sub-pixels, a plurality of third sub-pixels, and a plurality of white sub-pixels. The first sub-pixels, the second sub-pixels, and the third sub-pixels are suitable for irradiating different light of three primary colors, respectively, while the white sub-pixels are suitable for irradiating white light. Each of the first sub-pixels does not adjoin the second sub-pixels and the third sub-pixels. Each of the second sub-pixels does not adjoin the third sub-pixels. Each of the first sub-pixels adjoins the white sub-pixels exclusively or adjoins the white sub-pixels and other first sub-pixels exclusively.
摘要:
A touch panel including a first substrate, a second substrate, a sealant, a liquid crystal layer, a main spacer, a first sensing spacer, a second sensing spacer, a first opposite electrode and a second opposite electrode is provided. The first substrate has a central area and a peripheral area. The second substrate is disposed opposite to the first substrate. The first sensing spacer is disposed on the central area and between the first and the second substrates. The second sensing spacer is disposed on the peripheral area and between the first and the second substrates. There's a first sensing gap between the first sensing spacer and the first opposite electrode disposed corresponding to the first sensing spacer. There's a second sensing gap between the second sensing spacer and the second opposite electrode disposed corresponding to the second sensing spacer. The first sensing gap is larger than the second sensing gap.
摘要:
A semiconductor device includes a first well region of a first conductivity, a second well region of a second conductivity type, a source region of the second conductivity type within the first well region, and a drain region of the second conductivity type at least partially within the second well region. A well contact to the first well region is coupled to the source. A first doped region of the first conductivity type and a second doped region of the second conductivity type are located in the second well region. A first transistor includes the first doped region, the second well region, and the first well region. The first transistor is coupled to a switch device. A second transistor includes the second well region, the first well region, and the source region. The first and the second transistors are configured to provide a current path during an ESD event.
摘要:
A semiconductor device, an electrostatic discharge protection device and manufacturing method thereof are provided. The electrostatic discharge protection device includes a gate, a gate dielectric layer, an N-type source region, an N-type drain region, an N-type doped region and a P-type doped region. The gate dielectric layer is disposed on a substrate. The gate is disposed on the gate dielectric layer. The N-type source region and the N-type drain region are disposed in the substrate at two sides of the gate, respectively. The N-type doped region is disposed in the N-type drain region and connects to the top of the N-type drain region. The P-type doped region is disposed under the N-type drain region and connects to the bottom of the N-type drain region.