公开(公告)号：US20110104616A1

公开(公告)日：2011-05-05

申请号：US12921753

申请日：2009-02-18

申请人： Shih-Yuan Cheng ,  Shenjian Liu ,  Youn Gi Hong ,  Qian Fu

发明人： Shih-Yuan Cheng ,  Shenjian Liu ,  Youn Gi Hong ,  Qian Fu

IPC分类号： G03F7/20 ,  C23F1/08

CPC分类号： H01L21/3065 ,  H01L21/0271 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/67069

摘要： A method for forming a photoresist mask may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a substrate, ionizing the UV producing gas to produce UV rays to irradiate the substrate, and etching features into the substrate through the photoresist mask.

摘要翻译： 用于形成光致抗蚀剂掩模的方法可以包括向具有基底的真空室提供紫外线（UV）产生气体，使产生紫外线的气体离子化以产生UV射线以照射基底，并通过光刻胶将特征蚀刻到基底中 面具。

公开(公告)号：US20060040415A1

公开(公告)日：2006-02-23

申请号：US11258658

申请日：2005-10-25

申请人： Wen-Ben Chou ,  Shih-Yuan Cheng ,  Wayne Tu

发明人： Wen-Ben Chou ,  Shih-Yuan Cheng ,  Wayne Tu

IPC分类号： H01L21/00 ,  C23F1/00

CPC分类号： H01J37/3244 ,  H01L21/31116 ,  H01L21/823468

摘要： An in situ dual-stage etch endpoint detection system is disclosed. The system includes an etch chamber, an interferometry endpoint monitoring system, and a non-IEP endpoint monitoring system. The etch chamber includes an electrostatic chuck (ESC), a top electrode, and a bottom electrode. The ESC is designed to support a wafer having a spacer layer formed over a gate structure. The interferometry endpoint (IEP) monitoring system is designed to monitor an interference photon beam reflected by the top of spacer layer and the reflection beam on interface of bottom of spacer during a first etch operation. The non-IEP endpoint monitoring system monitors a second etch operation by monitoring an etch time. A first etch operation implementing the IEP monitoring system is discontinued, leaving a thin spacer layer to be etched during the second etch operation.

摘要翻译： 公开了原位双级蚀刻终点检测系统。 该系统包括蚀刻室，干涉测量终点监测系统和非IEP端点监测系统。 蚀刻室包括静电卡盘（ESC），顶部电极和底部电极。 ESC被设计成支撑在栅极结构上形成间隔层的晶片。 干涉测量终点（IEP）监测系统设计用于在第一次蚀刻操作期间监测由间隔层的顶部反射的干涉光子束和隔离物底部界面上的反射光束。 非IEP端点监测系统通过监测蚀刻时间来监测第二蚀刻操作。 停止实施IEP监测系统的第一蚀刻操作，留下在第二蚀刻操作期间被蚀刻的薄间隔层。

公开(公告)号：US08753804B2

公开(公告)日：2014-06-17

申请号：US12921753

申请日：2009-02-18

申请人： Shih-Yuan Cheng ,  Shenjian Liu ,  Youn Gi Hong ,  Qian Fu

发明人： Shih-Yuan Cheng ,  Shenjian Liu ,  Youn Gi Hong ,  Qian Fu

IPC分类号： G03F7/20

CPC分类号： H01L21/3065 ,  H01L21/0271 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/67069

摘要： A method for forming a photoresist mask may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a substrate, ionizing the UV producing gas to produce UV rays to irradiate the substrate, and etching features into the substrate through the photoresist mask.

摘要翻译： 用于形成光致抗蚀剂掩模的方法可以包括向具有基底的真空室提供紫外线（UV）产生气体，使产生紫外线的气体离子化以产生UV射线以照射基底，并通过光刻胶将特征蚀刻到基底中 面具。

公开(公告)号：US06977184B1

公开(公告)日：2005-12-20

申请号：US09998858

申请日：2001-10-31

申请人： Wen-Ben Chou ,  Shih-Yuan Cheng ,  Wayne Tu

发明人： Wen-Ben Chou ,  Shih-Yuan Cheng ,  Wayne Tu

IPC分类号： H01J37/32 ,  H01L21/311 ,  H01L21/8234 ,  H01L21/302

CPC分类号： H01J37/3244 ,  H01L21/31116 ,  H01L21/823468

摘要： A method for fabricating a spacer of a gate structure is provided. The method performing a first etch process implementing a first etchant gas. The first etch process is configured to implement an interferometry endpoint (IEP) detection method to detect a removal of a portion of a spacer layer having a specific thickness from over the surface of the substrate, thus leaving a thin spacer layer. The method further includes performing a second etch process for a predetermined period of time implementing a second etchant gas. The second etch process is configured to remove the thin spacer layer, leaving the spacer for the gate structure.

摘要翻译： 提供一种用于制造栅极结构的间隔物的方法。 该方法执行实施第一蚀刻剂气体的第一蚀刻工艺。 第一蚀刻工艺被配置为实现干涉测量终点（IEP）检测方法，以检测从衬底的表面上去除具有特定厚度的间隔层的一部分，从而留下薄的间隔层。 该方法还包括在实施第二蚀刻剂气体的预定时间段内执行第二蚀刻工艺。 第二蚀刻工艺被配置为去除薄间隔层，留下用于栅极结构的间隔物。