公开(公告)号：US5840615A

公开(公告)日：1998-11-24

申请号：US810201

申请日：1997-03-03

申请人： Katsuhiro Aoki ,  Yukio Fukuda ,  Akitoshi Nishimura ,  Tomomi Nagao ,  Shinichi Hachiya

发明人： Katsuhiro Aoki ,  Yukio Fukuda ,  Akitoshi Nishimura ,  Tomomi Nagao ,  Shinichi Hachiya

IPC分类号： C01B13/32 ,  C04B35/49 ,  C23C18/12 ,  H01B3/00 ,  H01G4/12 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242

CPC分类号： H01L21/31691 ,  C23C18/1216 ,  C23C18/1254 ,  C23C18/1279 ,  H01L21/02197 ,  H01L21/02282 ,  H01L28/55

摘要： A method for forming a ferroelectric material film, more particularly a lead zirconate titanate (PZT) film by the sol-gel method wherein a lowered oxidative sintering temperature may be adopted in preparing the ferroelectric material film with a perovskite crystalline structure, thereby reducing the risk of oxidation of metal electrodes and other circuits when the ferroelectric material film is employed as a dielectric in semiconductor devices, such as in a capacitor, for example. The method contemplates the preparation of a raw material solution containing an organometallic compound of a metallic element forming the ferroelectric material film, alkanolamine and/or stabilizer comprising a .beta.-diketone, with the concentration of the stabilizer being sufficient to provide a mole ratio to the total metal atoms of (stabilizer/total metal atoms)>3. The method then involves coating the raw material solution, drying the coated raw material solution to form a dried film, and sintering the dried film to form the ferroelectric material film wherein the oxidative sintering is carried out at a relatively low temperature of about 450.degree. C. in forming the ferroelectric material film with a perovskite crystalline structure.

摘要翻译： 通过溶胶 - 凝胶法形成铁电材料膜的方法，特别是锆钛酸铅（PZT）薄膜，其中在制备具有钙钛矿晶体结构的铁电材料膜时可以采用降低的氧化烧结温度，从而降低风险 当将铁电材料膜用作例如电容器等半导体器件中的电介质时，金属电极和其他电路的氧化。 该方法考虑了制备含有形成铁电材料膜的金属元素的有机金属化合物的原料溶液，包含β-二酮的链烷醇胺和/或稳定剂，其稳定剂的浓度足以提供与 （稳定剂/总金属原子）的总金属原子> 3。 然后，该方法包括涂覆原料溶液，干燥涂覆的原料溶液以形成干燥膜，并烧结干燥的膜以形成铁电材料膜，其中氧化烧结在约450℃的较低温度下进行 在形成具有钙钛矿晶体结构的铁电材料膜时。