公开(公告)号：US5374570A

公开(公告)日：1994-12-20

申请号：US109109

申请日：1993-08-19

申请人： Yasuhiro Nasu ,  Kenji Okamoto ,  Jun-ichi Watanabe ,  Tetsuro Endo ,  Shinichi Soeda

发明人： Yasuhiro Nasu ,  Kenji Okamoto ,  Jun-ichi Watanabe ,  Tetsuro Endo ,  Shinichi Soeda

IPC分类号： H01L29/78 ,  B82B1/00 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L21/265

CPC分类号： G02F1/1368 ,  H01L21/28008 ,  H01L21/31683 ,  H01L27/1214 ,  G02F1/136213

摘要： A method of manufacturing an active matrix display device, in which particular emphases are laid on the forming step of an insulation layer by the ALE method and the precedent and subsequent steps thereof, thereby insulation layer being anyone among gate insulation layer, inter-busline insulation layer, protection layer and auxiliary capacitor insulation layer comprised in the display device. The method of forming the insulation layer comprises the predetermined number of repeated cycles of the steps of subjecting a substrate to the vapor of a metal inorganic/organic compound, which can react with H.sub.2 O and/or O.sub.2 and form the metal oxide, under molecular flow condition for duration of depositing almost a single atomic layer, and next subjecting the surface of thus formed metal inorganic/organic compound layer to the H.sub.2 O vapor and/or O.sub.2 gas under molecular flow condition for duration of replacing the metal inorganic/organic compound layer to the metal oxide layer. The subsequent steps after forming of the insulation layer include deposition steps of silicon nitride and amorphous silicon layers using the same plasma CVD apparatus. The molecular flow condition is obtained by maintaining the pressure in a reaction chamber within a range between 1 and several tens of milli-Torr.

摘要翻译： 一种制造有源矩阵显示装置的方法，其中通过ALE方法及其先后的步骤在绝缘层的形成步骤上放置了特别的重点，由此绝缘层是栅极绝缘层，母线间绝缘 层，保护层和包括在显示装置中的辅助电容器绝缘层。 形成绝缘层的方法包括以下步骤的预定数量的重复循环：在分子流下使基底经受可与H 2 O和/或O 2反应并形成金属氧化物的金属无机/有机化合物的蒸气 在几乎单个原子层沉积的条件下，然后在分子流动条件下将由此形成的金属无机/有机化合物层的表面经受H 2 O蒸气和/或O 2气体，以将金属无机/有机化合物层替代为 金属氧化物层。 在形成绝缘层之后的后续步骤包括使用相同的等离子体CVD装置的氮化硅和非晶硅层的沉积步骤。 通过将反应室中的压力保持在1至数十毫乇之间的范围内来获得分子流动条件。