摘要:
A phase change memory device and a method of forming the same are provided. The phase change memory device includes a conducting electrode in a dielectric layer, a bottom electrode over the conducting electrode, a phase change layer over the bottom electrode, and a top electrode over the phase change layer. The phase change memory device may further include a heat sink layer between the phase change layer and the top electrode. The resistivities of the bottom electrode and the top electrode are preferably greater than the resistivity of the phase change material in the crystalline state.
摘要:
Disclosed is a preparation method of water soluble antimicrobial polyacrylate silver salt. The water soluble antimicrobial polyacrylate silver salt is synthesized by dissolving a water soluble polyacrylate comprising sodium carboxylic group (—COONa) or potassium carboxylic group (—COOK) in water and then partially changing the sodium carboxylic group or potassium carboxylic group of the water soluble polyacrylate to silver carboxylic group (—COOAg) using silver salt in aqueous solution. Next, ultrafiltration membrane is used to remove the sodium salt or potassium salt generated from the metal ion exchanging procedure. The last step is to remove water from the ultrafiltration treated aqueous solution of polyacrylate silver salt to give water soluble antimicrobial polyacrylate silver salt.
摘要:
A phase change memory device and a method of forming the same are provided. The phase change memory device includes a conducting electrode in a dielectric layer, a bottom electrode over the conducting electrode, a phase change layer over the bottom electrode, and a top electrode over the phase change layer. The phase change memory device may further include a heat sink layer between the phase change layer and the top electrode. The resistivities of the bottom electrode and the top electrode are preferably greater than the resistivity of the phase change material in the crystalline state.