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公开(公告)号：US06885577B2
公开(公告)日：2005-04-26
申请号：US10464311
申请日：2003-06-18
申请人： Denny Duan-Lee Tang , Wen-Chin Lin
发明人： Denny Duan-Lee Tang , Wen-Chin Lin
CPC分类号： G11C11/16
摘要： A new magnetic RAM cell device is achieved. The device comprises a plurality MTJ cells each comprising a free layer and a pinned layer separated by a dielectric layer. A common conductive layer couples together all of the pinned layers of the MJT cell. A first end of the common conductive layer is switchably coupled to a programming line. A second end of the common conductive layer is switchably coupled to a ground. A pluraity of diodes is used. Each diode is coupled between one of the MJT cells and one of a plurality of bit lines.
摘要翻译： 实现了新的磁性RAM单元装置。 该装置包括多个MTJ单元，每个单元包括由电介质层分离的自由层和钉扎层。 公共导电层将MJT电池的所有被钉扎层结合在一起。 公共导电层的第一端可切换地耦合到编程线。 公共导电层的第二端可切换地耦合到地面。 使用二极管的光源。 每个二极管耦合在MJT单元之一和多个位线之一之间。
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公开(公告)号：US07439957B2
公开(公告)日：2008-10-21
申请号：US09768829
申请日：2001-01-25
IPC分类号： G09G5/00
CPC分类号： H04M1/23 , G06F1/1622 , G06F1/1626 , G06F1/163 , G06F1/1632 , G06F1/1662 , G06F1/1664 , G06F3/0236 , H04M1/0214 , H04M1/0231 , H04M1/0247
摘要： A keyboard type input device has multiple key positions provided as character entry keys. Each key corresponds to one key in the selected row of the conventional QWERTY keyboard. A second set of control buttons provide for the selection of which row of a conventional QWERTY keyboard are represented by the character keys in addition to other functions such as case shift, and alpha-numerical control functions. A selected row is shown on a display, as visual feedback. Alternatively the keys are implemented as LCDs with pressure sensors and the characters of the selected row are displayed directly on the corresponding key positions. The keyboard finds particular use in portable devices as it demands less space than traditional keyboards. The keyboard type input device is implemented with various electronic appliances, including portable phones.
摘要翻译： 键盘型输入装置具有作为字符输入键提供的多个键位置。 每个键对应于常规QWERTY键盘的所选行中的一个键。 第二组控制按钮提供除了诸如情况移动和字母数字控制功能的其他功能之外，还可以选择常规QWERTY键盘的哪一行由字符键表示。 所选行显示在显示屏上，作为视觉反馈。 或者，键被实现为具有压力传感器的LCD，并且所选行的字符被直接显示在相应的键位置上。 键盘在便携式设备中特别有用，因为它比传统键盘要求的空间要小。 键盘式输入装置由包括便携式电话在内的各种电子设备实现。
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公开(公告)号：US20080132028A1
公开(公告)日：2008-06-05
申请号：US11972482
申请日：2008-01-10
申请人： Wai-Yi Lien , Denny Duan-lee Tang
发明人： Wai-Yi Lien , Denny Duan-lee Tang
IPC分类号： H01L21/76
CPC分类号： H01L21/263 , H01L21/761
摘要： An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit region and a second circuit region. Two guard rings are formed along the semi-insulating region, each on a side. A backside semi-insulating region is formed through proton bombardment from the back surface of the substrate into the substrate. The backside semi-insulating region is preferably connected with the semi-insulating region. A grounded guard layer is preferably formed on the backside semi-insulating region.
摘要翻译： 提供了用于隔离衬底噪声的集成电路结构及其形成方法。 在本发明的优选实施例中，使用质子轰击在第一电路区域和第二电路区域之间的衬底中形成半绝缘区域。 沿着半绝缘区域形成两个保护环，每个在一侧。 通过从衬底的背面进入衬底的质子轰击形成背面半绝缘区域。 背面半绝缘区域优选与半绝缘区域连接。 优选地，在背面半绝缘区域上形成接地保护层。
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公开(公告)号：US06525717B1
公开(公告)日：2003-02-25
申请号：US09465746
申请日：1999-12-17
申请人： Denny Duan-lee Tang
发明人： Denny Duan-lee Tang
IPC分类号： G09G500
CPC分类号： G06F3/043 , G06F3/0202 , G06F3/0236
摘要： A virtual input device uses the acoustical signature of the user's fingers to determine which character is selected. Rows of acoustical sensors having different acoustical properties are spaced in the vertical direction. When a user touches a specific row with a particular finger a unique acoustical signature is produced. The acoustical signature is analyzed to determine the finger used, the row, and the specific action by the finger, e.g. slide, press, tap. The combinations of the row, finger and action define the character selected. The characters are associated with the combinations in such a way to provide a traditional keyboard setup. Visual feedback of the character selected is provided by a display device of the system.
摘要翻译： 虚拟输入设备使用用户手指的声学签名来确定选择哪个字符。 具有不同声学特性的声学传感器行在垂直方向上间隔开。 当用户用特定手指触摸特定行时，产生独特的声学签名。 分析声学特征以确定手指使用的手指，行和手指的具体动作，例如， 滑动，按，点击。 行，手指和动作的组合定义所选的字符。 这些字符与组合相关联，以提供传统的键盘设置。 所选择的角色的视觉反馈由系统的显示装置提供。
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公开(公告)号：US5936466A
公开(公告)日：1999-08-10
申请号：US905748
申请日：1997-08-04
申请人： Hajime Andoh , Denny Duan Lee Tang
发明人： Hajime Andoh , Denny Duan Lee Tang
CPC分类号： H03F3/45659 , H03F3/45941 , H03F2200/294 , H03F2200/372 , H03F2203/45428 , H03F2203/45626 , H03F2203/45644
摘要： A low-power dual-g.sub.m differential operational transconductance amplifier (OTA) having a differential input for improved common-mode noise rejection, a high transconductance for power savings, and circuitry for controlling its output conductance. The OTA includes a pair of input inverters for receiving differential input signals, a common-mode voltage control circuit for controlling the DC voltage levels of the inverters, and a Q-control circuit for adjusting the OTA's output conductance. The common-mode voltage control circuit has a pair of compensating current sources and a feedback loop acting as a high-gain amplifier. The high-gain amplifier has a pair of comparators for respectively comparing the DC voltage levels of the inverter outputs with a reference voltage. The Q-control circuit includes a current source coupled to a crossed-coupled NMOS transistor pair such that the OTA's output conductance may be controlled by adjusting the current source.
摘要翻译： 具有用于改善共模噪声抑制的差分输入，功率节省的高跨导以及用于控制其输出电导的电路的低功率双重差分运算跨导放大器（OTA）。 OTA包括用于接收差分输入信号的一对输入反相器，用于控制逆变器的直流电压电平的共模电压控制电路和用于调整OTA输出电导的Q控制电路。 共模电压控制电路具有一对补偿电流源和作为高增益放大器的反馈回路。 高增益放大器有一对比较器，用于分别比较逆变器输出的直流电压电平和参考电压。 Q控制电路包括耦合到交叉耦合的NMOS晶体管对的电流源，使得OTA的输出电导可以通过调节电流源来控制。
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公开(公告)号：US08130199B2
公开(公告)日：2012-03-06
申请号：US12186939
申请日：2008-08-06
CPC分类号： H04M1/23 , G06F1/1622 , G06F1/1626 , G06F1/163 , G06F1/1632 , G06F1/1662 , G06F1/1664 , G06F3/0236 , H04M1/0214 , H04M1/0231 , H04M1/0247
摘要： A keyboard type input device used in conjunction with a wristwatch or a portable telephone has multiple key positions provided as character entry keys. Each key corresponds to one key in the selected row of the conventional QWERTY keyboard. A second set of control buttons provide for the selection of which row of a conventional QWERTY keyboard are represented by the character keys in addition to other functions such as case shift, and alpha-numerical control functions. A selected row is shown on a display, as visual feedback. Alternatively the keys are implemented as LCDs with pressure sensors and the characters of the selected row are displayed directly on the corresponding key positions. The keyboard finds particular use in portable devices as it demands less space than traditional keyboards.
摘要翻译： 与手表或便携式电话一起使用的键盘型输入装置具有作为字符输入键提供的多个键位置。 每个键对应于常规QWERTY键盘的所选行中的一个键。 第二组控制按钮提供除了诸如情况移动和字母数字控制功能的其他功能之外，还可以选择常规QWERTY键盘的哪一行由字符键表示。 所选行显示在显示屏上，作为视觉反馈。 或者，键被实现为具有压力传感器的LCD，并且所选行的字符被直接显示在相应的键位置上。 键盘在便携式设备中特别有用，因为它比传统键盘要求的空间要小。
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公开(公告)号：US08022382B2
公开(公告)日：2011-09-20
申请号：US11368192
申请日：2006-03-03
申请人： Li-Shyue Lai , Denny Duan-lee Tang , Wen-chin Lin , Teng-Chien Yu , Hui-Fang Tsai , Wei-Hsiang Wang , Shyhyeu Wang
发明人： Li-Shyue Lai , Denny Duan-lee Tang , Wen-chin Lin , Teng-Chien Yu , Hui-Fang Tsai , Wei-Hsiang Wang , Shyhyeu Wang
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/128 , H01L45/144 , H01L45/1666
摘要： A phase change memory device and a method of forming the same are provided. The phase change memory device includes a conducting electrode in a dielectric layer, a bottom electrode over the conducting electrode, a phase change layer over the bottom electrode, and a top electrode over the phase change layer. The phase change memory device may further include a heat sink layer between the phase change layer and the top electrode. The resistivities of the bottom electrode and the top electrode are preferably greater than the resistivity of the phase change material in the crystalline state.
摘要翻译： 提供了一种相变存储器件及其形成方法。 相变存储器件包括介电层中的导电电极，导电电极上的底电极，底电极上的相变层和相变层上的顶电极。 相变存储器件还可以包括在相变层和顶部电极之间的散热层。 底电极和顶电极的电阻率优选大于结晶态相变材料的电阻率。
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公开(公告)号：US20100140580A1
公开(公告)日：2010-06-10
申请号：US12703571
申请日：2010-02-10
IPC分类号： H01L45/00
CPC分类号： G11C11/5678 , G11C13/0004 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A phase change memory is provided. The method includes forming contact plugs in a first dielectric layer. A second dielectric layer is formed overlying the first dielectric layer and a trench formed therein exposing portions of the contact plugs. A metal layer is formed over surfaces of the trench. One or more heaters are formed from the metal layer such that each heater is formed along one or more sidewalls of the trench, wherein the portion of the heater along the sidewalls does not include a corner region of adjacent sidewalls. The trench is filled with a third dielectric layer, and a fourth dielectric layer is formed over the third dielectric layer. Trenches are formed in the fourth dielectric layer and filled with a phase change material. An electrode is formed over the phase change material.
摘要翻译： 提供了相变存储器。 该方法包括在第一电介质层中形成接触塞。 形成第二电介质层，覆盖第一电介质层和形成在其中的沟槽，暴露接触插塞的部分。 在沟槽的表面上形成金属层。 从金属层形成一个或多个加热器，使得每个加热器沿着沟槽的一个或多个侧壁形成，其中加热器沿侧壁的部分不包括相邻侧壁的拐角区域。 沟槽填充有第三电介质层，并且在第三介电层上形成第四电介质层。 在第四电介质层中形成沟槽并填充相变材料。 在相变材料上形成电极。
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公开(公告)号：US07537982B2
公开(公告)日：2009-05-26
申请号：US11972482
申请日：2008-01-10
申请人： Wai-Yi Lien , Denny Duan-lee Tang
发明人： Wai-Yi Lien , Denny Duan-lee Tang
CPC分类号： H01L21/263 , H01L21/761
摘要： An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit region and a second circuit region. Two guard rings are formed along the semi-insulating region, each on a side. A backside semi-insulating region is formed through proton bombardment from the back surface of the substrate into the substrate. The backside semi-insulating region is preferably connected with the semi-insulating region. A grounded guard layer is preferably formed on the backside semi-insulating region.
摘要翻译： 提供了用于隔离衬底噪声的集成电路结构及其形成方法。 在本发明的优选实施例中，使用质子轰击在第一电路区域和第二电路区域之间的衬底中形成半绝缘区域。 沿着半绝缘区域形成两个保护环，每个在一侧。 通过从衬底的背面进入衬底的质子轰击形成背面半绝缘区域。 背面半绝缘区域优选与半绝缘区域连接。 优选地，在背面半绝缘区域上形成接地保护层。
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公开(公告)号：US07492018B2
公开(公告)日：2009-02-17
申请号：US11089186
申请日：2005-03-24
申请人： Wai-Yi Lien , Denny Duan-lee Tang
发明人： Wai-Yi Lien , Denny Duan-lee Tang
CPC分类号： H01L21/263 , H01L21/761
摘要： An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed using proton bombardment in a substrate between a first circuit region and a second circuit region. Two guard rings are formed along the semi-insulating region, each on a side. A backside semi-insulating region is formed through proton bombardment from the back surface of the substrate into the substrate. The backside semi-insulating region is preferably connected with the semi-insulating region. A grounded guard layer is preferably formed on the backside semi-insulating region.
摘要翻译： 提供了用于隔离衬底噪声的集成电路结构及其形成方法。 在本发明的优选实施例中，使用质子轰击在第一电路区域和第二电路区域之间的衬底中形成半绝缘区域。 沿着半绝缘区域形成两个保护环，每个在一侧。 通过从衬底的背面进入衬底的质子轰击形成背面半绝缘区域。 背面半绝缘区域优选与半绝缘区域连接。 优选地，在背面半绝缘区域上形成接地保护层。
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