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    LASER-BASED WAVEGUIDE-COUPLED WHITE LIGHT SYSTEM FOR A LIGHTING APPLICATION
    3.
    发明申请
    LASER-BASED WAVEGUIDE-COUPLED WHITE LIGHT SYSTEM FOR A LIGHTING APPLICATION 审中-公开

    公开(公告)号：US20200232610A1

    公开(公告)日：2020-07-23

    申请号：US16597791

    申请日：2019-10-09

    Applicant: Soraa Laser Diode, Inc.

    Inventor： James W. Raring ,  Paul Rudy ,  Sten Heikman ,  Ryan Gresback ,  Julian Carey

    IPC: F21K9/61 ,  F21V8/00 ,  F21K9/64 ,  F21K9/68 ,  F21V14/04

    Abstract: A laser-based fiber-coupled white light system is provided. The system includes a laser device comprising a gallium and nitrogen containing emitting region having an output facet configured to output a laser emission with a first wavelength ranging from 385 nm to 495 nm. The system further includes a phosphor member integrated with light collimation elements. The phosphor member converts the laser emission with the first wavelength to a phosphor emission with a second wavelength in either reflective or transmissive mode and mixed partially with laser emission to produce a white light emission. The system includes a transport fiber coupled to the phosphor member via the light collimation elements to receive the white light emission and deliver the white light emission remotely to one or more passive luminaries substantially free of electrical or moving parts disposed at remote distances from a dedicated source area.

    Manufacturable multi-emitter laser diode
    6.
    发明授权
    Manufacturable multi-emitter laser diode 有权

    公开(公告)号：US10566767B2

    公开(公告)日：2020-02-18

    申请号：US15351326

    申请日：2016-11-14

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Dan Steigerwald ,  Melvin McLaurin ,  Eric Goutain ,  Alexander Sztein ,  Po Shan Hsu ,  Paul Rudy ,  James W. Raring

    IPC: H01S5/40 ,  H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/042 ,  H01S5/00

    Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

    Magnesium based gettering regions for gallium and nitrogen containing laser diode devices
    7.
    发明授权
    Magnesium based gettering regions for gallium and nitrogen containing laser diode devices 有权

    公开(公告)号：US10566766B1

    公开(公告)日：2020-02-18

    申请号：US16219689

    申请日：2018-12-13

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass

    IPC: H01S5/32 ,  H01S5/343 ,  H01S5/323

    Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

    Manufacturable laser diode
    9.
    发明授权
    Manufacturable laser diode 有权

    公开(公告)号：US10367334B2

    公开(公告)日：2019-07-30

    申请号：US15176076

    申请日：2016-06-07

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  Dan Steigerwald ,  James W. Raring

    IPC: H01S5/02 ,  H01S5/40 ,  H01S5/30 ,  H01L23/00 ,  H01S5/022 ,  H01S5/323 ,  H01S5/22

    Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

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