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公开(公告)号：US07397049B2
公开(公告)日：2008-07-08
申请号：US11386596
申请日：2006-03-22
CPC分类号： H01J37/3171 , H01J2237/1501 , H01J2237/24405 , H01J2237/24507 , H01J2237/24542 , H01J2237/2487 , H01J2237/30472 , H01J2237/30477 , H01J2237/31705
摘要： A system, method and program product for determining parallelism of an ion beam using a refraction method, are disclosed. One embodiment includes determining a first test position of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system and adjustments of the ion implanter system based on the parallelism determination are also disclosed.
摘要翻译： 公开了一种使用折射方法确定离子束的平行度的系统，方法和程序产品。 一个实施例包括确定离子束的第一测试位置，同时不将离子束暴露于加速/减速电场，确定离子束的第二测试位置，同时将离子束暴露于加速/减速电场，以及确定 基于第一测试位置和第二测试位置的离子束的平行度。 当光束不平行时，加速/减速电场用于折射两个位置之间的离子束，从而放大任何非平行度。 折射量或横向偏移可用于确定离子束的非平行度。 还公开了一种离子注入机系统和基于并行度测定的离子注入机系统的调整。
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公开(公告)号：US08722431B2
公开(公告)日：2014-05-13
申请号：US13426785
申请日：2012-03-22
申请人： Nilay Anil Pradhan , Stanislav S. Todorov , Kurt Decker-Lucke , Klaus Petry , Benjamin Colombeau , Baonian Guo
发明人： Nilay Anil Pradhan , Stanislav S. Todorov , Kurt Decker-Lucke , Klaus Petry , Benjamin Colombeau , Baonian Guo
IPC分类号： H01L21/00
CPC分类号： H01L29/66795 , H01L21/26513 , H01L21/76243
摘要： A method of forming a FinFET device. The method may include providing a substrate having a single crystalline region, heating the substrate to a substrate temperature effective for dynamically removing implant damage during ion implantation, implanting ions into the substrate while the substrate is maintained at the substrate temperature, and patterning the single crystalline region so as to form a single crystalline fin.
摘要翻译： 一种形成FinFET器件的方法。 该方法可以包括提供具有单晶区域的衬底，将衬底加热到衬底温度以有效地在离子注入期间动态地去除注入损伤，在将衬底保持在衬底温度的同时将离子注入到衬底中，并且使单晶 以形成单晶翅片。
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公开(公告)号：US07413596B2
公开(公告)日：2008-08-19
申请号：US10982561
申请日：2004-11-05
CPC分类号： C02F1/22 , C02F1/20 , C02F2301/063 , H01J2237/022 , H01J2237/31705
摘要： The present invention provides methods and apparatus for the production of liquids and vapors that are free of, or substantially free of, dissolved or trapped gases. In one embodiment, a liquid is placed in a sealed vessel and subjected to a temperature below the freezing point of the liquid for sufficient time to substantially, if not completely, turn the liquid into a solid. Concurrent with or subsequent to the cooling of the liquid, the interior of the vessel is subjected to a vacuum so as to evacuate all or substantially all of the gaseous atmosphere. Thereafter, the vessel is heated to a temperature above the melting point of the liquid, allowing the frozen material to return to its liquid form or sublimate to form a vapor.
摘要翻译： 本发明提供了用于生产不含或基本上不含溶解或捕获的气体的液体和蒸汽的方法和装置。 在一个实施方案中，将液体置于密封容器中并经受低于液体凝固点的温度足够的时间以基本上（如果不是完全）将液体转化为固体。 与液体冷却同时或之后，容器的内部经受真空，以排出所有或基本上全部的气体气氛。 此后，将容器加热到高于液体熔点的温度，使冷冻的材料返回其液体形式或升华以形成蒸气。
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公开(公告)号：US20070221871A1
公开(公告)日：2007-09-27
申请号：US11386596
申请日：2006-03-22
CPC分类号： H01J37/3171 , H01J2237/1501 , H01J2237/24405 , H01J2237/24507 , H01J2237/24542 , H01J2237/2487 , H01J2237/30472 , H01J2237/30477 , H01J2237/31705
摘要： A system, method and program product for determining parallelism of an ion beam using a refraction method, are disclosed. One embodiment includes determining a first test position of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system and adjustments of the ion implanter system based on the parallelism determination are also disclosed.
摘要翻译： 公开了一种使用折射方法确定离子束的平行度的系统，方法和程序产品。 一个实施例包括确定离子束的第一测试位置，同时不将离子束暴露于加速/减速电场，确定离子束的第二测试位置，同时将离子束暴露于加速/减速电场，以及确定 基于第一测试位置和第二测试位置的离子束的平行度。 当光束不平行时，加速/减速电场用于折射两个位置之间的离子束，从而放大任何非平行度。 折射量或横向偏移可用于确定离子束的非平行度。 还公开了一种离子注入机系统和基于并行度测定的离子注入机系统的调整。
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公开(公告)号：US20130252349A1
公开(公告)日：2013-09-26
申请号：US13426785
申请日：2012-03-22
申请人： Nilay Anil Pradhan , Stanislav S. Todorov , Kurt Decker-Lucke , Klaus Petry , Benjamin Colombeau , Baonian Guo
发明人： Nilay Anil Pradhan , Stanislav S. Todorov , Kurt Decker-Lucke , Klaus Petry , Benjamin Colombeau , Baonian Guo
IPC分类号： H01L21/02
CPC分类号： H01L29/66795 , H01L21/26513 , H01L21/76243
摘要： A method of forming a FinFET device. The method may include providing a substrate having a single crystalline region, heating the substrate to a substrate temperature effective for dynamically removing implant damage during ion implantation, implanting ions into the substrate while the substrate is maintained at the substrate temperature, and patterning the single crystalline region so as to form a single crystalline fin.
摘要翻译： 一种形成FinFET器件的方法。 该方法可以包括提供具有单晶区域的衬底，将衬底加热到衬底温度以有效地在离子注入期间动态地去除注入损伤，在将衬底保持在衬底温度的同时将离子注入到衬底中，并且使单晶 以形成单晶翅片。
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