Method and apparatus for the production of purified liquids and vapors
    1.
    发明授权
    Method and apparatus for the production of purified liquids and vapors 有权
    用于生产纯化液体和蒸气的方法和设备

    公开(公告)号:US07413596B2

    公开(公告)日:2008-08-19

    申请号:US10982561

    申请日:2004-11-05

    IPC分类号: C02F1/22 B01D19/00

    摘要: The present invention provides methods and apparatus for the production of liquids and vapors that are free of, or substantially free of, dissolved or trapped gases. In one embodiment, a liquid is placed in a sealed vessel and subjected to a temperature below the freezing point of the liquid for sufficient time to substantially, if not completely, turn the liquid into a solid. Concurrent with or subsequent to the cooling of the liquid, the interior of the vessel is subjected to a vacuum so as to evacuate all or substantially all of the gaseous atmosphere. Thereafter, the vessel is heated to a temperature above the melting point of the liquid, allowing the frozen material to return to its liquid form or sublimate to form a vapor.

    摘要翻译: 本发明提供了用于生产不含或基本上不含溶解或捕获的气体的液体和蒸汽的方法和装置。 在一个实施方案中,将液体置于密封容器中并经受低于液体凝固点的温度足够的时间以基本上(如果不是完全)将液体转化为固体。 与液体冷却同时或之后,容器的内部经受真空,以排出所有或基本上全部的气体气氛。 此后,将容器加热到高于液体熔点的温度,使冷冻的材料返回其液体形式或升华以形成蒸气。

    Determining ion beam parallelism using refraction method
    2.
    发明申请
    Determining ion beam parallelism using refraction method 有权
    使用折射法确定离子束平行度

    公开(公告)号:US20070221871A1

    公开(公告)日:2007-09-27

    申请号:US11386596

    申请日:2006-03-22

    IPC分类号: G01N23/00 G21K5/10

    摘要: A system, method and program product for determining parallelism of an ion beam using a refraction method, are disclosed. One embodiment includes determining a first test position of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system and adjustments of the ion implanter system based on the parallelism determination are also disclosed.

    摘要翻译: 公开了一种使用折射方法确定离子束的平行度的系统,方法和程序产品。 一个实施例包括确定离子束的第一测试位置,同时不将离子束暴露于加速/减速电场,确定离子束的第二测试位置,同时将离子束暴露于加速/减速电场,以及确定 基于第一测试位置和第二测试位置的离子束的平行度。 当光束不平行时,加速/减速电场用于折射两个位置之间的离子束,从而放大任何非平行度。 折射量或横向偏移可用于确定离子束的非平行度。 还公开了一种离子注入机系统和基于并行度测定的离子注入机系统的调整。

    Determining ion beam parallelism using refraction method
    3.
    发明授权
    Determining ion beam parallelism using refraction method 有权
    使用折射法确定离子束平行度

    公开(公告)号:US07397049B2

    公开(公告)日:2008-07-08

    申请号:US11386596

    申请日:2006-03-22

    IPC分类号: G01N23/00 G21K5/10

    摘要: A system, method and program product for determining parallelism of an ion beam using a refraction method, are disclosed. One embodiment includes determining a first test position of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system and adjustments of the ion implanter system based on the parallelism determination are also disclosed.

    摘要翻译: 公开了一种使用折射方法确定离子束的平行度的系统,方法和程序产品。 一个实施例包括确定离子束的第一测试位置,同时不将离子束暴露于加速/减速电场,确定离子束的第二测试位置,同时将离子束暴露于加速/减速电场,以及确定 基于第一测试位置和第二测试位置的离子束的平行度。 当光束不平行时,加速/减速电场用于折射两个位置之间的离子束,从而放大任何非平行度。 折射量或横向偏移可用于确定离子束的非平行度。 还公开了一种离子注入机系统和基于并行度测定的离子注入机系统的调整。

    METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER
    4.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER 有权
    用于控制离子植入物中光束电流均匀性的方法和装置

    公开(公告)号:US20090314962A1

    公开(公告)日:2009-12-24

    申请号:US12143144

    申请日:2008-06-20

    IPC分类号: H01J37/08 G02B5/00

    摘要: An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.

    摘要翻译: 一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。 电极组件包括具有长度为L的提取槽的电极,其与用于提取离子束的离子源室的孔径对准。 电极包括在提取槽的长度内分隔的多个段,其中每个段被配置为相对于离子束在至少一个方向上移位。 多个致动器连接到多个电极段,用于移动一个或多个段。 通过移位多个电极段中的至少一个,修改与提取槽内的段的位置相对应的一部分离子束的电流密度,以提供与提取的离子束相关联的均匀的电流密度波束轮廓。

    Ion source cleaning method and apparatus
    6.
    发明授权
    Ion source cleaning method and apparatus 有权
    离子源清洗方法及装置

    公开(公告)号:US07888662B2

    公开(公告)日:2011-02-15

    申请号:US12143247

    申请日:2008-06-20

    IPC分类号: H01J37/08

    摘要: In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced intothe source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via. plasma-enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits.

    摘要翻译: 在离子源室的清洁处理中,位于离子源室外的电极包括抑制塞。 当清洁气体被引入源室中时,抑制塞可以接合源室的提取孔以调节室内的气体压力以增强室清洁。 等离子体增强化学反应。 在清洁过程中可以调节源室孔和抑制塞之间的气体传导,以提供最佳的清洁条件并排出不需要的沉积物。

    Method and apparatus for controlling beam current uniformity in an ion implanter
    7.
    发明授权
    Method and apparatus for controlling beam current uniformity in an ion implanter 有权
    用于控制离子注入机中束流均匀性的方法和装置

    公开(公告)号:US07767986B2

    公开(公告)日:2010-08-03

    申请号:US12143144

    申请日:2008-06-20

    IPC分类号: H01J37/08 H01J37/15 H01J27/02

    摘要: An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.

    摘要翻译: 一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。 电极组件包括具有长度为L的提取槽的电极,其与用于提取离子束的离子源室的孔径对准。 电极包括在提取槽的长度内分隔的多个段,其中每个段被配置为相对于离子束在至少一个方向上移位。 多个致动器连接到多个电极段,用于移动一个或多个段。 通过移位多个电极段中的至少一个,修改与提取槽内的段的位置相对应的一部分离子束的电流密度,以提供与提取的离子束相关联的均匀的电流密度波束轮廓。

    ION SOURCE CLEANING METHOD AND APPARATUS
    8.
    发明申请
    ION SOURCE CLEANING METHOD AND APPARATUS 有权
    离子源清洁方法和装置

    公开(公告)号:US20090314951A1

    公开(公告)日:2009-12-24

    申请号:US12143247

    申请日:2008-06-20

    IPC分类号: H01J27/02 B08B6/00

    摘要: In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced into the source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via. plasma-enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits.

    摘要翻译: 在离子源室的清洁处理中,位于离子源室外的电极包括抑制塞。 当清洁气体被引入源室中时,抑制塞可以接合源室的提取孔以调节室内的气体压力以增强室清洁。 等离子体增强化学反应。 在清洁过程中可以调节源室孔和抑制塞之间的气体传导,以提供最佳的清洁条件并排出不需要的沉积物。

    Internal RF antenna with dielectric insulation
    9.
    发明授权
    Internal RF antenna with dielectric insulation 有权
    内置射频天线,具有绝缘绝缘

    公开(公告)号:US08912976B2

    公开(公告)日:2014-12-16

    申请号:US13612406

    申请日:2012-09-12

    IPC分类号: H01Q1/36

    摘要: Disclosed is a radio frequency (RF) antenna for plasma ion sources. The RF antenna includes a low-resistance metal tube having an inner and outer diameter. A low friction polymer tube also having an inner and outer diameter surrounds the low-resistance metal tube. The inner diameter of the polymer tube is slightly larger than the outer diameter of the low-resistance metal tube. A pre-formed quartz glass tube encases the low friction polymer tube and low-resistance metal tube. The quartz glass tube is pre-formed in a desired shape. A guide wire is attached inside one end of the low-resistance hollow metal tube. The flexible low friction polymer tube containing the low-resistance metal tubed may then be threaded through the quartz glass tube.

    摘要翻译: 公开了一种用于等离子体离子源的射频(RF)天线。 RF天线包括具有内径和外径的低电阻金属管。 也具有内外径的低摩擦聚合物管围绕低电阻金属管。 聚合物管的内径稍微大于低电阻金属管的外径。 预制石英玻璃管包裹低摩擦聚合物管和低电阻金属管。 石英玻璃管预成形为所需形状。 引导线安装在低阻力中空金属管的一端内。 含有低电阻金属管的柔性低摩擦聚合物管可以穿过石英玻璃管。