Abstract:
An illumination system for use in photolithography using a laser or radiation beam source. A deformable mirror is used to shape the beam of laser radiation to obtain global uniformity. A profile sensing means is used to detect any global non-uniformities. The output of this sensing means is fed to a controller for calculating a mirror contour and controlling actuators that shape the deformable mirror to obtain a globally uniform intensity. A diffractive or diffusive optical element, such as a microlens array, eliminates local non-uniformities. Movement of this element eliminates speckle caused by interference due to the coherent beam source. A uniform intensity profile and appropriate angular spread is achieved with very little transmission loss and is automatically compensated for degraded or changing source performance. The illumination system is particularly applicable to a scanning photolithography process as used in the manufacture of semiconductor substrates.
Abstract:
An electron beam lithographic apparatus has an electron gun providing a beam of accelerated electrons, a mask stage adapted to hold a mask in a path of the beam of accelerated electrons, and a workpiece stage adapted to hold a workpiece in a path of electrons that have passed through the mask. The electron gun has a cathode having an electron emission surface, an anode adapted to be connected to a high-voltage power supply to provide an electric field between the cathode and the anode to accelerate electrons emitted from the cathode toward the anode, and a current-density-profile control grid disposed between the anode and the cathode. The current-density-profile control grid is configured to provide an electron gun that produces an electron beam having a non-uniform current density profile. A method of producing a micro-device includes generating a beam of charged particles having a non-uniform charged-particle current density, illuminating a mask with the beam of charged particles, and exposing a workpiece with charged particles from the beam of charged particles.
Abstract:
An alignment sensor having a fixed reference grating and a movable wafer grating receiving electromagnetic radiation from a coherent illumination source. The illumination source is split into two beams by a beamsplitter. One beam is directed to a fixed reference grating and the diffracted orders are collected. The other beam from the beamsplitter is directed to a movable wafer grating. The diffracted orders from the movable wafer grating are collected and caused to interfere with the diffracted orders from the fixed reference grating, causing a phase shift indicative of the wafer movement or misalignment with respect to the fixed reference grating. Multiple channels having discrete wavelengths or colors are used to optimize detection and alignment irrespective of wafer processing variables. A polarization fixture on the illumination source and a central polarizing portion on the beamsplitter is used to provide contrast optimization, or alternately a latent image metrology mode. The alignment sensor improves alignment accuracy irrespective of processing variables and provides flexibility improving efficiency in the manufacture of semiconductor devices.
Abstract:
A process and method for projection beam lithography which utilizes an estimator, such as a Kalman filter to control electron beam placement. The Kalman filter receives predictive information from a model and measurement information from a projection electron beam lithography tool and compensates for factors which cause beam placement error such as wafer heating and beam drift. The process and method may also utilize an adaptive Kalman filter to control electron beam placement. The adaptive Kalman filter receives predictive information from a number of models and measurement information from a projection electron beam lithography tool and compensates for factors which cause beam placement error such as heating and beam drift. The Kalman filter may be implemented such that real-time process control may be achieved.
Abstract:
A process and method for projection beam lithography which utilizes an estimator, such as a Kalman filter to control electron beam placement. The Kalman filter receives predictive information from a model and measurement information from a projection electron beam lithography tool and compensates for factors which cause beam placement error such as wafer heating and beam drift. The process and method may also utilize an adaptive Kalman filter to control electron beam placement. The adaptive Kalman filter receives predictive information from a number of models and measurement information from a projection electron beam lithography tool and compensates for factors which cause beam placement error such as heating and beam drift. The Kalman filter may be implemented such that real-time process control may be achieved.
Abstract:
The optical demuxplixer/multiplexer architecture includes an anamorphic optical system that decouples first characteristics of a beam passing through the anamorphic optical system from at least second characteristics of the beam.