专利检索 ap:"Sudarashan V. Rangaraj" 第 1 页

1.

发明授权
Apparatuses and methods to enhance passivation and ILD reliability 有权
标题翻译：增强钝化和ILD可靠性的设备和方法

公开(公告)号：US08198185B2

公开(公告)日：2012-06-12

申请号：US12554523

申请日：2009-09-04

申请人： Richard J. Harries , Sudarashan V. Rangaraj , Bob Sankman

发明人： Richard J. Harries , Sudarashan V. Rangaraj , Bob Sankman

IPC分类号： H01L21/44

CPC分类号： H01L23/3128 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05567 , H01L2224/05599 , H01L2224/10126 , H01L2224/1191 , H01L2224/13022 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/16 , H01L2224/73204 , H01L2224/81193 , H01L2224/812 , H01L2224/81801 , H01L2924/00014 , H01L2924/0002 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/19043 , H01L2224/05552

摘要： Some embodiments of the present invention include apparatuses and methods relating to processing and packaging microelectronic devices that reduce stresses on and limit or eliminate crack propagation in the devices.

摘要翻译： 本发明的一些实施例包括与减少应力并限制或消除器件中裂纹扩展的微电子器件的处理和封装相关的装置和方法。

2.

发明授权
Apparatuses and methods to enhance passivation and ILD reliability 有权
标题翻译：增强钝化和ILD可靠性的设备和方法

公开(公告)号：US08664771B2

公开(公告)日：2014-03-04

申请号：US13493693

申请日：2012-06-11

申请人： Richard J. Harries , Sudarashan V. Rangaraj , Bob Sankman

发明人： Richard J. Harries , Sudarashan V. Rangaraj , Bob Sankman

IPC分类号： H01L23/48

CPC分类号： H01L23/3128 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05567 , H01L2224/05599 , H01L2224/10126 , H01L2224/1191 , H01L2224/13022 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/16 , H01L2224/73204 , H01L2224/81193 , H01L2224/812 , H01L2224/81801 , H01L2924/00014 , H01L2924/0002 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/19043 , H01L2224/05552

摘要： Some embodiments of the present invention include apparatuses and methods relating to processing and packaging microelectronic devices that reduce stresses on and limit or eliminate crack propagation in the devices.

摘要翻译： 本发明的一些实施例包括与减少应力并限制或消除器件中裂纹扩展的微电子器件的处理和封装相关的装置和方法。

3.

发明申请
APPARATUSES AND METHODS TO ENHANCE PASSIVATION AND ILD RELIABILITY 有权
标题翻译：增强隐藏和ILD可靠性的方法和方法

公开(公告)号：US20120241952A1

公开(公告)日：2012-09-27

申请号：US13493693

申请日：2012-06-11

申请人： Richard J. Harries , Sudarashan V. Rangaraj , Bob Sankman

发明人： Richard J. Harries , Sudarashan V. Rangaraj , Bob Sankman

IPC分类号： H01L23/488

CPC分类号： H01L23/3128 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05567 , H01L2224/05599 , H01L2224/10126 , H01L2224/1191 , H01L2224/13022 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/16 , H01L2224/73204 , H01L2224/81193 , H01L2224/812 , H01L2224/81801 , H01L2924/00014 , H01L2924/0002 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/19043 , H01L2224/05552

摘要： Some embodiments of the present invention include apparatuses and methods relating to processing and packaging microelectronic devices that reduce stresses on and limit or eliminate crack propagation in the devices.

摘要翻译： 本发明的一些实施例包括与减少应力并限制或消除器件中裂纹扩展的微电子器件的处理和封装相关的装置和方法。

4.

发明申请
APPARATUSES AND METHODS TO ENHANCE PASSIVATION AND ILD RELIABILITY 有权
标题翻译：增强隐藏和ILD可靠性的方法和方法

公开(公告)号：US20140175643A1

公开(公告)日：2014-06-26

申请号：US14195422

申请日：2014-03-03

申请人： Richard J. Harries , Sudarashan V. Rangaraj , Robert L. Sankman

发明人： Richard J. Harries , Sudarashan V. Rangaraj , Robert L. Sankman

IPC分类号： H01L23/31

CPC分类号： H01L23/3128 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05567 , H01L2224/05599 , H01L2224/10126 , H01L2224/1191 , H01L2224/13022 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/16 , H01L2224/73204 , H01L2224/81193 , H01L2224/812 , H01L2224/81801 , H01L2924/00014 , H01L2924/0002 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/19043 , H01L2224/05552

摘要： Some embodiments of the present invention include apparatuses and methods relating to processing and packaging microelectronic devices that reduce stresses on and limit or eliminate crack propagation in the devices.

摘要翻译： 本发明的一些实施例包括与减少应力并限制或消除器件中裂纹扩展的微电子器件的处理和封装相关的装置和方法。

5.

发明申请
APPARATUSES AND METHODS TO ENHANCE PASSIVATION AND ILD RELIABILITY 有权
标题翻译：增强隐藏和ILD可靠性的方法和方法

公开(公告)号：US20090325347A1

公开(公告)日：2009-12-31

申请号：US12554523

申请日：2009-09-04

申请人： Richard J. Harries , Sudarashan V. Rangaraj , Bob Sankman

发明人： Richard J. Harries , Sudarashan V. Rangaraj , Bob Sankman

IPC分类号： H01L21/56

CPC分类号： H01L23/3128 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05567 , H01L2224/05599 , H01L2224/10126 , H01L2224/1191 , H01L2224/13022 , H01L2224/13099 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/16 , H01L2224/73204 , H01L2224/81193 , H01L2224/812 , H01L2224/81801 , H01L2924/00014 , H01L2924/0002 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/19043 , H01L2224/05552

摘要： Some embodiments of the present invention include apparatuses and methods relating to processing and packaging microelectronic devices that reduce stresses on and limit or eliminate crack propagation in the devices.

摘要翻译： 本发明的一些实施例包括与减少应力并限制或消除器件中裂纹扩展的微电子器件的处理和封装相关的装置和方法。