公开(公告)号：US20110003477A1

公开(公告)日：2011-01-06

申请号：US12821924

申请日：2010-06-23

申请人： Young-Lim Park ,  Jinil Lee ,  Changsu Kim ,  Sugwoo Jung

发明人： Young-Lim Park ,  Jinil Lee ,  Changsu Kim ,  Sugwoo Jung

IPC分类号： H01L21/30

CPC分类号： H01L21/0228 ,  C23C16/34 ,  C23C16/45531 ,  H01L21/02153 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/76843 ,  H01L45/06 ,  H01L45/126 ,  H01L45/16

摘要： Provided are methods of forming a semiconductor device. The methods include providing a first precursor and a substitute gas into a reaction chamber having a substrate therein, the first precursor having a first substituent and further providing a second precursor into the reaction chamber. Either the first precursor or the second precursor includes a metal element and the other includes a silicon element, at least one of the first substituents of the first precursor are substituted with the substitute gas, the first precursor substituted with the substitute gas is adsorbed onto the substrate, and the second precursor is reacted with the adsorbed first precursor.

摘要翻译： 提供了形成半导体器件的方法。 所述方法包括将第一前体和替代气体提供到其中具有基底的反应室中，第一前体具有第一取代基并进一步向反应室提供第二前体。 第一前体或第二前体包括金属元素，另一个包含硅元素，第一前体中的至少一个第一取代基被替代气体取代，被替代气体取代的第一前体被吸附到 底物，第二前体与吸附的第一前体反应。

公开(公告)号：US20170110650A1

公开(公告)日：2017-04-20

申请号：US15210151

申请日：2016-07-14

申请人： Junghwan PARK ,  Jonguk KIM ,  Soonoh PARK ,  Jung Moo LEE ,  Sugwoo JUNG

发明人： Junghwan PARK ,  Jonguk KIM ,  Soonoh PARK ,  Jung Moo LEE ,  Sugwoo JUNG

IPC分类号： H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08

CPC分类号： H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A semiconductor memory device includes a selection transistor on a semiconductor substrate, a lower contact plug connected to a drain region of the selection transistor, and a magnetic tunnel junction pattern on the lower contact plug, the magnetic tunnel junction pattern including a bottom electrode in contact with the lower contact plug, the bottom electrode being an amorphous tantalum nitride layer, a top electrode on the bottom electrode, first and second magnetic layers between the top and bottom electrodes, and a tunnel barrier layer between the first and second magnetic layers.

公开(公告)号：US08389408B2

公开(公告)日：2013-03-05

申请号：US12821924

申请日：2010-06-23

申请人： Young-Lim Park ,  Jinil Lee ,  Changsu Kim ,  Sugwoo Jung

发明人： Young-Lim Park ,  Jinil Lee ,  Changsu Kim ,  Sugwoo Jung

IPC分类号： H01L21/30

CPC分类号： H01L21/0228 ,  C23C16/34 ,  C23C16/45531 ,  H01L21/02153 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/76843 ,  H01L45/06 ,  H01L45/126 ,  H01L45/16

摘要： Provided are methods of forming a semiconductor device. The methods include providing a first precursor and a substitute gas into a reaction chamber having a substrate therein, the first precursor having a first substituent and further providing a second precursor into the reaction chamber. Either the first precursor or the second precursor includes a metal element and the other includes a silicon element, at least one of the first substituents of the first precursor are substituted with the substitute gas, the first precursor substituted with the substitute gas is adsorbed onto the substrate, and the second precursor is reacted with the adsorbed first precursor.

摘要翻译： 提供了形成半导体器件的方法。 所述方法包括将第一前体和替代气体提供到其中具有基底的反应室中，第一前体具有第一取代基并进一步向反应室提供第二前体。 第一前体或第二前体包括金属元素，另一个包含硅元素，第一前体中的至少一个第一取代基被替代气体取代，被替代气体取代的第一前体被吸附到 底物，第二前体与吸附的第一前体反应。