公开(公告)号：US07396744B2

公开(公告)日：2008-07-08

申请号：US11481633

申请日：2006-07-06

申请人： Yonghoon Son ,  Sungkwan Kang ,  Jongwook Lee

发明人： Yonghoon Son ,  Sungkwan Kang ,  Jongwook Lee

IPC分类号： H01L21/00

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/2026

摘要： A method of fabricating a semiconductor thin film is provided, comprising: forming an insulation layer on a semiconductor substrate; etching the insulation layer to form a plurality of openings exposing the substrate at the bottom of the openings; filling the openings with a semiconductor seed layer; forming an amorphous layer on the seed layer and the insulation layer; transforming the amorphous layer to a polycrystalline layer by exposing the amorphous layer to a first laser irradiation at a first energy level; and forming a single semiconductor crystalline film by annealing the polycrystalline layer and the semiconductor seed layer with a second laser irradiation at a second energy level.

摘要翻译： 提供一种制造半导体薄膜的方法，包括：在半导体衬底上形成绝缘层; 蚀刻绝缘层以形成在开口底部露出基底的多个开口; 用半导体籽晶层填充开口; 在种子层和绝缘层上形成非晶层; 通过将非晶层暴露于第一能量级的第一激光照射，将非晶层转变为多晶层; 以及通过以第二能量级的第二激光照射退火所述多晶层和所述半导体种子层来形成单个半导体晶体膜。

公开(公告)号：US20070224789A1

公开(公告)日：2007-09-27

申请号：US11716894

申请日：2007-03-12

申请人： Sungkwan Kang ,  Yong-Hoon Son ,  Jongwook Lee ,  Yugyun Shin

发明人： Sungkwan Kang ,  Yong-Hoon Son ,  Jongwook Lee ,  Yugyun Shin

IPC分类号： H01L21/20

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2026

摘要： In some methods of fabricating a silicon-on-insulator substrate, a semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A first insulating film is formed on the defined region of the semiconductor substrate with an opening that exposes a portion of the defined region of the semiconductor substrate having the single crystalline structure. A first non-single crystalline film is formed on the exposed portion of the semiconductor substrate and that at least substantially fills the opening in the first insulating film. A laser beam is generated that heats the first non-single crystalline film to change the first non-single crystalline film into a first single crystalline film having substantially the same single crystalline structure as the defined region of the semiconductor substrate.

摘要翻译： 在制造绝缘体上硅衬底的一些方法中，提供在其至少其限定区域内包括单晶结构的半导体衬底。 在半导体衬底的限定区域上形成第一绝缘膜，该开口具有露出具有单晶结构的半导体衬底的限定区域的一部分的开口。 第一非单晶膜形成在半导体衬底的暴露部分上，并且至少基本上填充第一绝缘膜中的开口。 产生激光束，其加热第一非单晶膜以将第一非单晶膜改变成具有与半导体衬底的限定区域基本上相同的单晶结构的第一单晶膜。

公开(公告)号：US08835995B2

公开(公告)日：2014-09-16

申请号：US13155483

申请日：2011-06-08

申请人： Sungkwan Kang ,  Keum Seok Park ,  Byeongchan Lee ,  Sangbom Kang ,  Nam-Kyu Kim

发明人： Sungkwan Kang ,  Keum Seok Park ,  Byeongchan Lee ,  Sangbom Kang ,  Nam-Kyu Kim

IPC分类号： H01L21/8234 ,  H01L21/44 ,  H01L29/78 ,  H01L21/02 ,  H01L21/8238 ,  H01L21/40 ,  H01L29/66

CPC分类号： H01L29/7848 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/0847 ,  H01L29/4975 ,  H01L29/51 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66507 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636

摘要： A semiconductor device includes a semiconductor substrate, a gate electrode structure including a gate electrode located on an active region of the semiconductor substrate, first and second epitaxial regions located in the active region at opposite sides of the gate electrode structure, and first and second silicide layers on upper surfaces of the first and second epitaxial regions, respectively. The first and second epitaxial regions include Si—X, where X is one of germanium and carbon, and at least a portion of each of the first and second silicide layers is devoid of X and includes Si—Y, where Y is a metal or metal alloy.

摘要翻译： 半导体器件包括半导体衬底，栅电极结构，其包括位于半导体衬底的有源区上的栅电极，位于栅电极结构相对侧的有源区中的第一和第二外延区，以及第一和第二硅化物 分别在第一和第二外延区域的上表面上分层。 第一外延区域和第二外延区域包括Si-X，其中X是锗和碳之一，并且第一和第二硅化物层中的每一个的至少一部分不含X并且包括Si-Y，其中Y是金属或 金属合金。

公开(公告)号：US20120056245A1

公开(公告)日：2012-03-08

申请号：US13155483

申请日：2011-06-08

申请人： Sungkwan Kang ,  Keum Seok Park ,  Byeongchan Lee ,  Sangbom Kang ,  Nam-Kyu Kim

发明人： Sungkwan Kang ,  Keum Seok Park ,  Byeongchan Lee ,  Sangbom Kang ,  Nam-Kyu Kim

IPC分类号： H01L29/78

CPC分类号： H01L29/7848 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/0847 ,  H01L29/4975 ,  H01L29/51 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66507 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636

摘要： A semiconductor device includes a semiconductor substrate, a gate electrode structure including a gate electrode located on an active region of the semiconductor substrate, first and second epitaxial regions located in the active region at opposite sides of the gate electrode structure, and first and second silicide layers on upper surfaces of the first and second epitaxial regions, respectively. The first and second epitaxial regions include Si—X, where X is one of germanium and carbon, and at least a portion of each of the first and second silicide layers is devoid of X and includes Si—Y, where Y is a metal or metal alloy

摘要翻译： 半导体器件包括半导体衬底，栅电极结构，其包括位于半导体衬底的有源区上的栅电极，位于栅电极结构相对侧的有源区中的第一和第二外延区，以及第一和第二硅化物 分别在第一和第二外延区域的上表面上分层。 第一外延区域和第二外延区域包括Si-X，其中X是锗和碳之一，并且第一和第二硅化物层中的每一个的至少一部分不含X并且包括Si-Y，其中Y是金属或 金属合金

公开(公告)号：US20070170433A1

公开(公告)日：2007-07-26

申请号：US11491396

申请日：2006-07-22

申请人： Yonghoon Son ,  Sungkwan Kang ,  Jongwook Lee

发明人： Yonghoon Son ,  Sungkwan Kang ,  Jongwook Lee

IPC分类号： H01L29/78 ,  H01L21/8234

CPC分类号： H01L27/0688 ,  H01L21/76816 ,  H01L21/8221

摘要： A method of fabricating a multilevel semiconductor integrated circuit is provided, comprising: forming on a first active semiconductor structure a first plurality of transistors with respective gate structures disposed on a first substrate and source or drain regions disposed within the first substrate; depositing a first insulation layer on the first substrate and the gate structures; etching the insulation layer to form a plurality of openings exposing portions of the first substrate contacting the bottoms of the openings; forming a semiconductor seed layer filling the openings; forming an amorphous layer on the seed layer and the insulation layer; subjecting the first active semiconductor structure to at least one application of laser irradiation to transform the amorphous layer to a crystalline semiconductor layer having a protrusion region with a peak at or near the middle of two adjacent openings; forming on a second active semiconductor structure a second plurality of transistors with respective gate structures disposed on the crystalline semiconductor layer and forming a contact structure to electrically connect a transistor of the first active semiconductor structure to a transistor of the second active semiconductor structure.

摘要翻译： 提供一种制造多电平半导体集成电路的方法，包括：在第一有源半导体结构上形成具有布置在第一衬底上的相应栅极结构的第一多个晶体管和设置在第一衬底内的源极或漏极区域; 在所述第一基板和所述栅极结构上沉积第一绝缘层; 蚀刻所述绝缘层以形成暴露所述第一基板的与所述开口的底部接触的部分的多个开口; 形成填充所述开口的半导体籽晶层; 在种子层和绝缘层上形成非晶层; 对所述第一有源半导体结构进行至少一次激光照射的施加以将所述非晶层转变为具有在两个相邻开口的中间处或附近具有峰值的突出区域的晶体半导体层; 在第二有源半导体结构上形成具有设置在所述晶体半导体层上的相应栅极结构的第二多个晶体管，并形成接触结构以将所述第一有源半导体结构的晶体管电连接到所述第二有源半导体结构的晶体管。

公开(公告)号：US20070166963A1

公开(公告)日：2007-07-19

申请号：US11481633

申请日：2006-07-06

申请人： Yonghoon Son ,  Sungkwan Kang ,  Jongwook Lee

发明人： Yonghoon Son ,  Sungkwan Kang ,  Jongwook Lee

IPC分类号： H01L21/00

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/2026

摘要： A method of fabricating a semiconductor thin film is provided, comprising: forming an insulation layer on a semiconductor substrate; etching the insulation layer to form a plurality of openings exposing the substrate at the bottom of the openings; filling the openings with a semiconductor seed layer; forming an amorphous layer on the seed layer and the insulation layer; transforming the amorphous layer to a polycrystalline layer by exposing the amorphous layer to a first laser irradiation at a first energy level; and forming a single semiconductor crystalline film by annealing the polycrystalline layer and the semiconductor seed layer with a second laser irradiation at a second energy level.

摘要翻译： 提供一种制造半导体薄膜的方法，包括：在半导体衬底上形成绝缘层; 蚀刻绝缘层以形成在开口底部露出基底的多个开口; 用半导体籽晶层填充开口; 在种子层和绝缘层上形成非晶层; 通过将非晶层暴露于第一能量级的第一激光照射，将非晶层转变为多晶层; 以及通过以第二能量级的第二激光照射退火所述多晶层和所述半导体种子层来形成单个半导体晶体膜。

公开(公告)号：US07674660B2

公开(公告)日：2010-03-09

申请号：US11491396

申请日：2006-07-22

申请人： Yonghoon Son ,  Sungkwan Kang ,  Jongwook Lee

发明人： Yonghoon Son ,  Sungkwan Kang ,  Jongwook Lee

IPC分类号： H01L21/00 ,  H01L21/20

CPC分类号： H01L27/0688 ,  H01L21/76816 ,  H01L21/8221

摘要： A method of fabricating a multilevel semiconductor integrated circuit is provided, comprising: forming on a first active semiconductor structure a first plurality of transistors with respective gate structures disposed on a first substrate and source or drain regions disposed within the first substrate; depositing a first insulation layer on the first substrate and the gate structures; etching the insulation layer to form a plurality of openings exposing portions of the first substrate contacting the bottoms of the openings; forming a semiconductor seed layer filling the openings; forming an amorphous layer on the seed layer and the insulation layer; subjecting the first active semiconductor structure to at least one application of laser irradiation to transform the amorphous layer to a crystalline semiconductor layer having a protrusion region with a peak at or near the middle of two adjacent openings; forming on a second active semiconductor structure a second plurality of transistors with respective gate structures disposed on the crystalline semiconductor layer and forming a contact structure to electrically connect a transistor of the first active semiconductor structure to a transistor of the second active semiconductor structure.

摘要翻译： 提供一种制造多电平半导体集成电路的方法，包括：在第一有源半导体结构上形成具有布置在第一衬底上的相应栅极结构的第一多个晶体管和设置在第一衬底内的源极或漏极区域; 在所述第一基板和所述栅极结构上沉积第一绝缘层; 蚀刻所述绝缘层以形成暴露所述第一基板的与所述开口的底部接触的部分的多个开口; 形成填充所述开口的半导体籽晶层; 在种子层和绝缘层上形成非晶层; 对所述第一有源半导体结构进行至少一次激光照射的施加以将所述非晶层转变为具有在两个相邻开口的中间处或附近具有峰值的突出区域的晶体半导体层; 在第二有源半导体结构上形成具有设置在所述晶体半导体层上的相应栅极结构的第二多个晶体管，并形成接触结构以将所述第一有源半导体结构的晶体管电连接到所述第二有源半导体结构的晶体管。

公开(公告)号：US07432173B2

公开(公告)日：2008-10-07

申请号：US11716894

申请日：2007-03-12

申请人： Sungkwan Kang ,  Yong-Hoon Son ,  Jongwook Lee ,  Yugyun Shin

发明人： Sungkwan Kang ,  Yong-Hoon Son ,  Jongwook Lee ,  Yugyun Shin

IPC分类号： H01L21/76

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/2026

摘要： In some methods of fabricating a silicon-on-insulator substrate, a semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A first insulating film is formed on the defined region of the semiconductor substrate with an opening that exposes a portion of the defined region of the semiconductor substrate having the single crystalline structure. A first non-single crystalline film is formed on the exposed portion of the semiconductor substrate and that at least substantially fills the opening in the first insulating film. A laser beam is generated that heats the first non-single crystalline film to change the first non-single crystalline film into a first single crystalline film having substantially the same single crystalline structure as the defined region of the semiconductor substrate.

摘要翻译： 在制造绝缘体上硅衬底的一些方法中，提供在其至少其限定区域内包括单晶结构的半导体衬底。 在半导体衬底的限定区域上形成第一绝缘膜，该开口具有露出具有单晶结构的半导体衬底的限定区域的一部分的开口。 第一非单晶膜形成在半导体衬底的暴露部分上，并且至少基本上填充第一绝缘膜中的开口。 产生激光束，其加热第一非单晶膜以将第一非单晶膜改变成具有与半导体衬底的限定区域基本上相同的单晶结构的第一单晶膜。