公开(公告)号：US4048297A

公开(公告)日：1977-09-13

申请号：US642036

申请日：1975-12-18

Applicant: Raymond E. Counsell ,  Terry Ta-Jen Yu

Inventor： Raymond E. Counsell ,  Terry Ta-Jen Yu

IPC: G01T1/161 ,  A61K29/00 ,  A61K43/00 ,  C07C87/30

CPC classification number: C07D451/02

Abstract: Para-iodobenzyltrimethylammonium iodide is useful as an intermediate in the manufacture of the corresponding compounds wherein the para-iodo atom is enriched with an .sup.123 iodine, .sup.125 iodine or .sup.131 iodine isotope. These radio-iodinated derivatives are valuable adrenal scanning agents in consequence of their propensity to localize in the adrenal gland. Moreover, their ability to bind to catecholamine storage sites accounts for their ability to localize in tissue having a large supply of adrenergic nerves such as spleen and sympathetic ganglia. When injected directly into the cerebrospinal fluid, they concentrate in the choroid plexus and in adrenergic innervated tissues such as the substantia nigra.

Abstract translation: 对碘碘苄基三甲基铵碘化物可用作制备相应化合物的中间体，其中对碘碘原子富含123碘，125碘或131碘同位素。 这些放射碘化衍生物是有价值的肾上腺扫描剂，因为它们倾向于在肾上腺中定位。 此外，它们与儿茶酚胺存储位点结合的能力可以解释其在具有大量肾上腺素能神经如脾脏和交感神经节的组织中的定位能力。 当直接注射到脑脊液中时，它们集中在脉络丛和肾上腺素支配的组织如黑质中。

公开(公告)号：US08048778B1

公开(公告)日：2011-11-01

申请号：US12964964

申请日：2010-12-10

Applicant: Chin-Yu Ku ,  Hsiu-Mei Yu ,  Chun-Ying Lin ,  Young-Chang Lien ,  Sheng-Hsiang Chiu ,  Ta-Jen Yu

Inventor： Chin-Yu Ku ,  Hsiu-Mei Yu ,  Chun-Ying Lin ,  Young-Chang Lien ,  Sheng-Hsiang Chiu ,  Ta-Jen Yu

IPC: H01L21/00

CPC classification number: H01L21/78 ,  B23K26/0006 ,  B23K26/009 ,  B23K26/18 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50 ,  H01L23/585 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2924/01019 ,  H01L2924/14 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/013

Abstract: An embodiment of the disclosure includes a method of dicing a semiconductor structure. A device layer on a semiconductor substrate is provided. The device layer has a first chip region and a second chip region. A scribe line region is between the first chip region and the second chip region. A protective layer is formed over the device layer thereby over the semiconductor substrate. The protective layer on the scribe line region is laser sawn to form a notch. The notch extends into the semiconductor substrate and the protective layer is formed to cover a portion of the notch. A mechanically sawing is performed through the portion of the protective layer and the substrate to separate the first chip region and the second chip region.

Abstract translation: 本公开的实施例包括切割半导体结构的方法。 提供半导体衬底上的器件层。 器件层具有第一芯片区域和第二芯片区域。 划线区域在第一芯片区域和第二芯片区域之间。 在器件层上形成保护层，从而在半导体衬底上形成保护层。 切割线区域上的保护层被激光锯切以形成切口。 凹口延伸到半导体衬底中，形成保护层以覆盖凹口的一部分。 通过保护层和衬底的部分进行机械锯切以分离第一芯片区域和第二芯片区域。