公开(公告)号：US5164363A

公开(公告)日：1992-11-17

申请号：US701587

申请日：1991-05-15

申请人： Kazuhiro Eguchi ,  Takatosi Nakanisi ,  Rie Satoh

发明人： Kazuhiro Eguchi ,  Takatosi Nakanisi ,  Rie Satoh

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L39/24

CPC分类号： C23C16/45523 ,  C23C16/408 ,  C23C16/45561 ,  H01L39/2441 ,  Y10S505/73 ,  Y10S505/734

摘要： A substrate to be deposited with a superconducting oxide thin film thereon is set a reaction furnace. An organic metal source gas and oxygen-containing gas are alternately introduced into the reactor to pyrolyze, thereby depositing the superconducting oxide thin film containing metal elements of the organic metal at which time an inert gas is used as a carrier gas for the carrier gas.

公开(公告)号：US4348981A

公开(公告)日：1982-09-14

申请号：US228350

申请日：1981-01-26

申请人： Takatosi Nakanisi ,  Atsushi Tanaka ,  Takashi Udagawa

发明人： Takatosi Nakanisi ,  Atsushi Tanaka ,  Takashi Udagawa

IPC分类号： C30B25/02 ,  C23C14/24 ,  C23C16/44 ,  C30B25/08 ,  C30B25/12 ,  C30B29/40 ,  H01L21/205 ,  C23C11/00

CPC分类号： C30B25/12 ,  C30B25/08 ,  Y10S118/90

摘要： A vertical type vapor-phase growth apparatus comprises a vapor-phase growth reactor constituted of an upper section defining an upper chamber having a lateral cross-section of about 200 cm.sup.2 and a lower section defining a lower chamber having a lateral cross-sectional area greater than, but smaller than four times the cross-sectional area of, the upper chamber, and a support for a semiconductor substrate disposed within the lower chamber. The support is in the form of a silicon plate on which a sample is directly placed.

摘要翻译： 垂直型气相生长装置包括气相生长反应器，其由限定具有约200cm 2的横截面的上室的上部构成，下部限定下横截面积较大的下室 而不是上室的横截面积的四倍以上，以及设置在下室内的半导体衬底的支撑体。 支撑体是硅板的形式，在其上直接放置样品。

公开(公告)号：US4290385A

公开(公告)日：1981-09-22

申请号：US54949

申请日：1979-07-05

申请人： Takatosi Nakanisi ,  Atsushi Tanaka ,  Takashi Udagawa

发明人： Takatosi Nakanisi ,  Atsushi Tanaka ,  Takashi Udagawa

IPC分类号： C30B25/02 ,  C23C14/24 ,  C23C16/44 ,  C30B25/08 ,  C30B25/12 ,  C30B29/40 ,  H01L21/205 ,  C23C11/00

CPC分类号： C30B25/12 ,  C30B25/08 ,  Y10S118/90

摘要： A vertical type vapor-phase growth apparatus comprises a vapor-phase growth reactor constituted of an upper section defining an upper chamber having a lateral cross-section of about 200 cm.sup.2 and a lower section defining a lower chamber having a lateral cross-sectional area greater than, but smaller than four times the cross-sectional area of, the upper chamber, and a support for a semiconductor substrate disposed within the lower chamber.

摘要翻译： 垂直型气相生长装置包括气相生长反应器，其由限定具有约200cm 2的横截面的上室的上部构成，下部限定具有较大横截面面积的下室 而不是上室的横截面积的四倍以上，以及设置在下室内的半导体衬底的支撑体。