公开(公告)号：US06360687B1

公开(公告)日：2002-03-26

申请号：US09412185

申请日：1999-10-04

申请人： Michihiko Yanagisawa ,  Takeshi Sadohara ,  Chikai Tanaka ,  Shinya Iida ,  Yasuhiro Horiike

发明人： Michihiko Yanagisawa ,  Takeshi Sadohara ,  Chikai Tanaka ,  Shinya Iida ,  Yasuhiro Horiike

IPC分类号： C23C16511

CPC分类号： H01L21/67167 ,  B24B37/345 ,  H01L21/30625 ,  H01L21/67028 ,  H01L21/67219 ,  H01L21/67745

摘要： A wafer flattening system is provided to consecutively and automatically remove the natural oxide film from a wafer and flatten and smooth the wafer so as to improve the surface roughness of the wafer and improve the work efficiency. A step of immersing the wafer in an aqueous solution of hydrofluoric acid of a natural oxide film removing device is performed so as to remove the natural oxide film, then followed by a step of locally etching the surface of the wafer at a local etching apparatus by an activated species gas produced from SF6 gas to flatten the surface. Then, a step of giving a mirror finish to the wafer surface by a CMP apparatus is performed to smooth it. It is also possible to perform the step of removal of the natural oxide film by spraying the entire surface of the wafer by an activated species gas produced from a mixed gas of CF4 gas and H2 gas and possible to perform the step of smoothing by spraying the entire surface of the wafer by an activated species gas produced from a mixed gas of CF4 gas and O2 gas.

摘要翻译： 提供晶片平坦化系统，以从晶片连续自动地除去天然氧化膜，使晶片平坦化和平滑化，从而提高晶片的表面粗糙度，提高工作效率。 进行将晶片浸渍在天然氧化膜除去装置的氢氟酸的水溶液中的步骤，以除去天然氧化物膜，然后在局部蚀刻装置上局部蚀刻晶片的表面， 由SF6气体产生的活化物质气体使表面变平。 然后，通过CMP装置对晶片表面进行镜面整理的步骤进行平滑化。 也可以通过由CF4气体和H2气体的混合气体产生的活化物质气体喷射晶片的整个表面来执行去除天然氧化物膜的步骤，并且可以通过喷涂 通过由CF 4气体和O 2气体的混合气体产生的活化种类气体，晶片的整个表面。

公开(公告)号：US06303511B2

公开(公告)日：2001-10-16

申请号：US09392131

申请日：1999-09-08

申请人： Michihiko Yanagisawa ,  Takeshi Sadohara

发明人： Michihiko Yanagisawa ,  Takeshi Sadohara

IPC分类号： H01L21302

CPC分类号： H01L21/3065

摘要： A wafer flattening process for improving the micro-roughness of a wafer by local etching while maintaining a distance between a plasma discharge location and the wafer surface at a predetermined value. By executing a plasma generating step, SF6 gas in a gas cylinder 31 is fed to the inside of an alumina discharge tube 2, then plasma discharge of the SF6 gas is caused by a plasma generator 1 to produce an activated species gas G and which is locally sprayed from a nozzle portion 20 of the alumina discharge tube 2 to the surface of the silicon wafer W. In this state, by performing a local etching step, the surface of the silicon wafer W is flattened. At this time, the distance from the approximate center of the plasma discharge location to the surface of the silicon wafer W is set to a distance larger than 3000 times the mean free path of the ions in the activated species gas G and smaller than 6000 times. Due to this, the ions in the activated species gas G are extinguished before being sprayed from the nozzle portion 20 and therefore the surface of the silicon wafer W is etched by only the neutral radicals without being damaged.

摘要翻译： 一种用于通过局部蚀刻来改善晶片的微粗糙度同时保持等离子体放电位置和晶片表面之间的距离处于预定值的晶圆平坦化工艺。 通过执行等离子体生成工序，将气瓶31中的SF 6气体供给到氧化铝排出管2的内部，然后由等离子体发生器1引起SF6气体的等离子体放电，生成活性种气体G， 从氧化铝排出管2的喷嘴部分20局部喷射到硅晶片W的表面。在这种状态下，通过进行局部蚀刻步骤，使硅晶片W的表面变平。 此时，从等离子体放电位置的近似中心到硅晶片W的表面的距离被设定为大于活性物质气体G中的离子的平均自由程的3000倍的距离，并且小于6000倍 。 由此，活化物质气体G中的离子在从喷嘴部分20喷射之前就被熄灭，因此硅晶片W的表面仅被中性自由基蚀刻而不被损坏。