公开(公告)号：US20100213599A1

公开(公告)日：2010-08-26

申请号：US12704094

申请日：2010-02-11

申请人： Kazuhiro Watanabe ,  Seiki Takata ,  Toshitsune Iijima ,  Tomomi Sato ,  Shigenori Sawachi ,  Takumi Kawana ,  Osamu Yamagata ,  Hiroshi Nomura ,  Yumiko Oshima

发明人： Kazuhiro Watanabe ,  Seiki Takata ,  Toshitsune Iijima ,  Tomomi Sato ,  Shigenori Sawachi ,  Takumi Kawana ,  Osamu Yamagata ,  Hiroshi Nomura ,  Yumiko Oshima

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L24/83 ,  H01L23/13 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L24/32 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2224/24227 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/8385 ,  H01L2224/83951 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/06524 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

摘要： A semiconductor device includes: a flat plate; a semiconductor chip which is disposed on one main surface of the flat plate and whose surface opposite an element circuit surface is fixedly bonded; a single layer of an insulating material layer formed continuously on the element circuit surface of the semiconductor chip and on the main surface of the flat plate; an opening formed at a position, in the insulating material layer, above an electrode disposed on the element circuit surface of the semiconductor chip; a conductive part formed in the opening so as to be connected to the electrode of the semiconductor chip; a wiring layer formed on the insulating material layer so as to be connected to the conductive part, and partly led out to a peripheral area of the semiconductor chip; and external electrodes formed on the wiring layer. Also adoptable is a structure in which a flat plate having a cavity is used, a semiconductor chip is disposed in the cavity, and an insulating material layer is filled and formed in a gap in the cavity. A semiconductor device high in yields and connection reliability, adaptable to a microscopic pitch of electrodes of a semiconductor chip, and excellent in electric characteristic is obtained at low cost.

摘要翻译： 半导体器件包括：平板; 半导体芯片，其设置在平板的一个主表面上，并且与元件电路表面相对的表面固定地接合; 在半导体芯片的元件电路表面上和平板主表面上连续形成的单层绝缘材料层; 在所述绝缘材料层的位置形成有设置在所述半导体芯片的元件电路面上的电极的上方的开口部; 形成在所述开口中以与半导体芯片的电极连接的导电部分; 布线层，形成在所述绝缘材料层上，以连接到所述导电部分，并且部分地引导到所述半导体芯片的周边区域; 以及形成在布线层上的外部电极。 还可以采用的是其中使用具有空腔的平板的结构，在空腔中设置半导体芯片，并且在空腔中的间隙中填充并形成绝缘材料层。 以低成本获得了可以适应于半导体芯片的电极的微观间距和优异的电特性的高产率和连接可靠性的半导体器件。