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1.发明授权公开(公告)号：US08470278B2
公开(公告)日：2013-06-25
申请号：US12990914
申请日：2009-08-04
IPC分类号： C01B25/10
CPC分类号： H01M10/0568 , C01B25/10 , C01B25/455 , H01M10/052 , H01M2300/0025 , Y02T10/7011
摘要： A method of manufacturing phosphorus pentafluoride and hexafluorophosphate can suppress the manufacturing cost and also can manufacture high-quality phosphorus pentafluoride from an inexpensive and low-quality raw material. The raw material for the method can include at least a phosphorus atom and a fluorine atom. These are brought into contact with a carrier gas, and a phosphorus pentafluoride is extracted and separated into the carrier gas. A method of manufacturing hexafluorophosphate includes reacting fluoride with the resulting phosphorus pentafluoride according to the following chemical reaction scheme: sPF5+AFs→A(PF6)s, in which s is in the range of 1≦s≦3, and A is at least one of the following: Li, Na, K, Rb, Cs, NH4, Ag, Mg, Ca, Ba, Zn, Cu, Pb, Al and Fe.
摘要翻译： 制造五氟化磷和六氟磷酸盐的方法可以抑制制造成本，并且还可以从廉价且低质量的原料制造高品质的五氟化磷。 该方法的原料可以至少包含磷原子和氟原子。 使其与载气接触，并且将五氟化磷萃取并分离成载气。 制造六氟磷酸盐的方法包括：根据以下化学反应方案使氟化物与得到的五氟化磷反应：sPF5 + AFs-> A（PF6）s，其中s在1 @ s @ 3的范围内，A在 Li，Na，K，Rb，Cs，NH4，Ag，Mg，Ca，Ba，Zn，Cu，Pb，Al和Fe中的至少一种。
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公开(公告)号：US20110135555A1
公开(公告)日：2011-06-09
申请号：US13057587
申请日：2009-06-08
IPC分类号： C01B35/06 , C01B33/107 , C01G17/04 , C01B25/10 , C01G28/00
CPC分类号： C01B9/08 , C01B33/10705 , C01B35/061 , C01B35/063 , C01G17/04 , C01G28/007
摘要： Disclosed is a process for producing a fluoride gas that can produces fluoride gases such as BF3, SiF4, GeF4, PF5 or AsF5 at a reduced production cost in a simple manner. The process is characterized in that a compound containing an atom, which, together with a fluorine atom, can form a polyatomic ion, is added to a hydrogen fluoride solution to produce the polyatomic ion in a hydrogen fluoride solution and to evolve a fluoride gas comprising the fluorine atom and the atom that, together with the fluorine atom, can form a polyatomic ion.
摘要翻译： 公开了以简单的方式以降低的生产成本生产可产生氟化物气体如BF 3，SiF 4，GeF 4，PF 5或AsF 5的氟化物气体的方法。 该方法的特征在于，将包含与氟原子一起形成多原子离子的原子的化合物加入到氟化氢溶液中以在氟化氢溶液中产生多原子离子，并释放出包含 氟原子和与氟原子一起可以形成多原子离子的原子。
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公开(公告)号：US06797194B1
公开(公告)日：2004-09-28
申请号：US09622397
申请日：2000-12-01
IPC分类号： C09K1300
CPC分类号： H01L21/02063 , H01L21/02129 , H01L21/02164 , H01L21/02238 , H01L21/02271 , H01L21/02274 , H01L21/31111 , H01L21/76814
摘要： The present invention provides a micromachining surface treatment material for and a surface treatment method that suppress widening of the diameter of contact holes when removing a natural oxidation layer arising at bottom sections of the contact holes. The micromachining surface treatment material contains less than 0.1% hydrofluoric acid, and more than 40% by weight but less than or equal to 47% by weight of ammonium fluoride. Also, a surfactant is contained therein in an amount from 0.0001 to 0.1% by weight.
摘要翻译： 本发明提供了一种用于表面处理方法的微加工表面处理材料，并且在去除在接触孔底部产生的自然氧化层时，抑制接触孔直径的扩大。 微加工表面处理材料含有小于0.1％的氢氟酸，和大于40重量％但小于或等于47重量％的氟化铵。 此外，其中含有0.0001至0.1重量％的表面活性剂。
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4.发明申请SURFACE TREATMENT SOLUTION FOR THE FINE SURFACE PROCESSING OF A GLASS SUBSTRATE CONTAINING MULTIPLE INGREDIENTS 失效用于表面处理含有多种成分的玻璃基材的表面处理解决方案公开(公告)号：US20090075486A1
公开(公告)日：2009-03-19
申请号：US12237981
申请日：2008-09-25
IPC分类号： H01L21/306
CPC分类号： C03C15/00
摘要： A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.
摘要翻译： 用于精细加工含有多种成分的玻璃基板的表面处理溶液用于构建基于液晶或有机电致发光的平板显示装置，而不会引起晶体沉淀和/或增加表面粗糙度。 本发明的蚀刻溶液除氢氟酸（HF）和氟化铵（NH4F）外还含有至少一种离子常数大于HF的酸。 可以有利地调节溶液中酸的浓度以最大化蚀刻速率。
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公开(公告)号：US06821452B2
公开(公告)日：2004-11-23
申请号：US10609834
申请日：2003-06-27
IPC分类号： C03C1500
CPC分类号： H01L21/31111 , H01L21/31144
摘要： An etching agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.
摘要翻译： 可以在不损害抗蚀剂图案的情况下高速蚀刻绝缘膜的蚀刻剂，在半导体制造工艺中的绝缘膜蚀刻工艺被单晶片处理蚀刻处理方法代替时，提供逼真的生产量，并且防止在 半导体蚀刻后。
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公开(公告)号：US06585910B1
公开(公告)日：2003-07-01
申请号：US09125440
申请日：1999-03-26
IPC分类号： C09K1308
CPC分类号： H01L21/31111 , H01L21/31144
摘要： An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.
摘要翻译： 可以在不损害抗蚀剂图案的情况下高速蚀刻绝缘膜的蚀刻处理剂，在半导体制造工艺中的绝缘膜蚀刻工艺被单晶片处理蚀刻处理方法代替时，提供逼真的生产量，并且防止表面上的粗糙度 蚀刻后的半导体。
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公开(公告)号：US09731968B2
公开(公告)日：2017-08-15
申请号：US13057587
申请日：2009-06-08
CPC分类号： C01B9/08 , C01B33/10705 , C01B35/061 , C01B35/063 , C01G17/04 , C01G28/007
摘要： Disclosed is a process for producing a fluoride gas that can produces fluoride gases such as BF3, SiF4, GeF4, PF5 or AsF5 at a reduced production cost in a simple manner. The process is characterized in that a compound containing an atom, which, together with a fluorine atom, can form a polyatomic ion, is added to a hydrogen fluoride solution to produce the polyatomic ion in a hydrogen fluoride solution and to evolve a fluoride gas comprising the fluorine atom and the atom that, together with the fluorine atom, can form a polyatomic ion.
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公开(公告)号：US09059480B2
公开(公告)日：2015-06-16
申请号：US12993175
申请日：2009-08-04
IPC分类号： C01B25/10 , H01M10/0568 , C01B25/455 , C01D13/00 , C01D15/00 , H01M10/0525
CPC分类号： H01M10/0568 , C01B25/455 , C01D13/00 , C01D15/005 , H01M10/0525 , Y02T10/7011
摘要： An object is to provide a method of manufacturing a hexafluorophosphate, that can simply and easily manufacture an inexpensive and high-quality hexafluorophosphate while suppressing the manufacturing cost, an electrolytic solution containing a hexafluorophosphate, and an electricity storage device including the electrolytic solution. The present invention relates to a method of manufacturing a hexafluorophosphate, which comprises reacting at least a phosphorus compound with a fluoride represented by MFs.r(HF) (wherein 0≦r≦6, 1≦s≦3, and M is at least one kind selected from the group consisting of Li, Na, K, Rb, Cs, NH4, Ag, Mg, Ca, Ba, Zn, Cu, Pb, Al and Fe) to produce a hexafluorophosphate represented by the chemical formula M(PF6)s.
摘要翻译： 本发明的目的是提供一种制造六氟磷酸盐的方法，其可以简单且容易地制造廉价且优质的六氟磷酸盐，同时抑制制造成本，含有六氟磷酸盐的电解液和包含该电解液的蓄电装置。 本发明涉及一种制造六氟磷酸盐的方法，该方法包括使至少一种磷化合物与由MFs.r（HF）表示的氟化物反应（其中0＆nlE; r＆nlE; 6,1＆nlE; s＆nlE; 3，M至少为 一种选自由Li，Na，K，Rb，Cs，NH4，Ag，Mg，Ca，Ba，Zn，Cu，Pb，Al和Fe组成的组），以产生由化学式M ）s。
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9.发明申请公开(公告)号：US20110189538A1
公开(公告)日：2011-08-04
申请号：US12990914
申请日：2009-08-04
CPC分类号： H01M10/0568 , C01B25/10 , C01B25/455 , H01M10/052 , H01M2300/0025 , Y02T10/7011
摘要： A method of manufacturing phosphorus pentafluoride and hexafluorophosphate can suppress the manufacturing cost and also can manufacture high-quality phosphorus pentafluoride from an inexpensive and low-quality raw material. The raw material for the method can include at least a phosphorus atom and a fluorine atom. These are brought into contact with a carrier gas, and a phosphorus pentafluoride is extracted and separated into the carrier gas. A method of manufacturing hexafluorophosphate includes reacting fluoride with the resulting phosphorus pentafluoride according to the following chemical reaction scheme: sPF5+AFs→A(PF6)s, in which s is in the range of 1≦s≦3, and A is at least one of the following: Li, Na, K, Rb, Cs, NH4, Ag, Mg, Ca, Ba, Zn, Cu, Pb, Al and Fe.
摘要翻译： 制造五氟化磷和六氟磷酸盐的方法可以抑制制造成本，并且还可以从廉价且低质量的原料制造高品质的五氟化磷。 该方法的原料可以至少包含磷原子和氟原子。 使其与载气接触，并且将五氟化磷萃取并分离成载气。 制造六氟磷酸盐的方法包括：根据以下化学反应方案使氟化物与得到的五氟化磷反应：sPF5 + AFs→A（PF6）s，其中s在1≤n1E的范围内; s和n1E; 3和A至少为 以下之一：Li，Na，K，Rb，Cs，NH4，Ag，Mg，Ca，Ba，Zn，Cu，Pb，Al和Fe。
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10.发明申请SURFACE TREATING FLUID FOR FINE PROCESSING OF MULTI-COMPONENT GLASS SUBSTRATE 审中-公开用于精细加工多组分玻璃基材的表面处理流体公开(公告)号：US20070215835A1
公开(公告)日：2007-09-20
申请号：US10488036
申请日：2002-09-02
IPC分类号： C09K13/08
摘要： A surface treatment solution for finely processing a glass substrate containing multiple ingredients like the one used for the construction of a liquid crystal-based or organic electroluminescence-based flat panel display device, without evoking crystal precipitation and surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution is adjusted.
摘要翻译： 一种表面处理溶液，用于微细加工含有用于构建液晶或有机电致发光的平板显示装置的多种成分的玻璃基板，而不会引起晶体析出和表面粗糙度。 除了氢氟酸（HF）外，本发明的蚀刻溶液还含有至少一种其解离常数大于HF的酸。 调节溶液中酸的浓度。
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