摘要:
The present invention provides a micromachining surface treatment material for and a surface treatment method that suppress widening of the diameter of contact holes when removing a natural oxidation layer arising at bottom sections of the contact holes. The micromachining surface treatment material contains less than 0.1% hydrofluoric acid, and more than 40% by weight but less than or equal to 47% by weight of ammonium fluoride. Also, a surfactant is contained therein in an amount from 0.0001 to 0.1% by weight.
摘要:
A surface treatment solution for finely processing a glass substrate containing multiple ingredients like the one used for the construction of a liquid crystal-based or organic electroluminescence-based flat panel display device, without evoking crystal precipitation and surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution is adjusted.
摘要:
A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.
摘要翻译:用于精细加工含有多种成分的玻璃基板的表面处理溶液用于构建基于液晶或有机电致发光的平板显示装置,而不会引起晶体沉淀和/或增加表面粗糙度。 除氢氟酸(HF)和氟化铵(NH 4 F F)外,本发明的蚀刻溶液含有至少一种其解离常数大于HF的酸。 可以有利地调节溶液中酸的浓度以最大化蚀刻速率。
摘要:
A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.
摘要:
An etching agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.
摘要:
An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.
摘要:
A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.
摘要:
A fine surface treatment for micromachining having an etching speed whose difference is smaller to oxide films each obtained by a different method as well as conditions of forming film or having different concentration of various impurities such as P, B and As in the film, and also having a practical etching speed to each of the films. The surface treatment for micromachining contains 0.1 to 8 weight percent of hydrogen fluoride and not less than 40 weight percent to not more than 47 weight percent of ammonium fluoride. It should be noted that it is preferable the surface treatment agent contains 0.001 to 1 weight percent of surfactant.
摘要:
An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen element, n is 3, 4 or 6, p is 1, 2 or 3), at a concentration of at least 0.01 mol/l. An electronic device manufactured using the etching agent requires only a single etching step to etch both conductive layers (such as aluminum) as well as ohmic contact layers (a-Si).
摘要:
A stainless steel with a passive state fluorinated film formed thereon, which is easy to construct and does not produce particles even when it is welded, and a device using the same. The stainless steel does not cause leakage even when said film is formed on a sealing surface of a joint and a valve seat surface. The stainless steel is characterized in that at least a part of the surface coated with a passive state fluorinated film not thicker than 190Å consisting of a metal fluoride as a main component.