公开(公告)号：US08679650B2

公开(公告)日：2014-03-25

申请号：US12571499

申请日：2009-10-01

申请人： Naho Itagaki ,  Tatsuya Iwasaki ,  Katsuyuki Hoshino

发明人： Naho Itagaki ,  Tatsuya Iwasaki ,  Katsuyuki Hoshino

IPC分类号： B32B9/04 ,  C23C14/34

CPC分类号： C30B29/406 ,  C30B23/025 ,  C30B25/183 ,  C30B29/403

摘要： A laminated structure comprises a first layer comprising a crystal with six-fold symmetry, and a second layer comprising a metal oxynitride crystal formed on the first layer The second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and has in-plane orientation.

摘要翻译： 叠层结构包括第一层，其包含具有六重对称性的晶体，第二层包括在第一层上形成的金属氧氮化物晶体。第二层包括选自In，Ga，Si， Ge和Al，N，O和Zn作为主要元素，并具有面内取向。

公开(公告)号：US08188471B2

公开(公告)日：2012-05-29

申请号：US12671052

申请日：2008-08-29

申请人： Tatsuya Iwasaki ,  Naho Itagaki

发明人： Tatsuya Iwasaki ,  Naho Itagaki

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  C23C14/086 ,  H01L29/78606

摘要： A field effect transistor is provided including a gate electrode (for example, 15), a source electrode (13), a drain electrode (14) and a channel layer (11) to control current flowing between the source electrode (13) and the drain electrode (14) by applying a voltage to the gate electrode (15). The channel layer (11) is constituted of an amorphous oxide containing In and Si and having a compositional ratio expressed by Si/(In+Si) of not less than 0.05 and not more than 0.40.

摘要翻译： 提供一种场效应晶体管，其包括栅电极（例如15），源电极（13），漏电极（14）和沟道层（11），以控制在源电极（13）和 漏电极（14）通过向栅电极（15）施加电压。 沟道层（11）由含有In和Si的无定形氧化物构成，Si /（In + Si）表示的组成比不小于0.05且不大于0.40。

公开(公告)号：US08097885B2

公开(公告)日：2012-01-17

申请号：US12127766

申请日：2008-05-27

申请人： Tomoyuki Oike ,  Tatsuya Iwasaki

发明人： Tomoyuki Oike ,  Tatsuya Iwasaki

IPC分类号： H01L29/15

CPC分类号： H01L21/02579 ,  H01L21/02568 ,  H01L21/02631 ,  H01L33/26

摘要： Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu2—Zn—IV—S4 type, in which the IV is at least one of Ge and Si. The light emitting film includes the light emitting material and the compound semiconductor film laminated on a substrate in the stated order.

摘要翻译： 本发明提供一种低温制造且显示出优异的p型导电性的化合物半导体膜，其中化合物半导体膜和发光材料层叠的发光膜，能够实现高强度发光的发光膜 。 化合物半导体膜具有由Cu2-Zn-IV-S4型表示的组成，其中IV是Ge和Si中的至少一种。 发光膜包括按照所述顺序层压在基板上的发光材料和化合物半导体膜。

公开(公告)号：US08084782B2

公开(公告)日：2011-12-27

申请号：US12185261

申请日：2008-08-04

申请人： Tomoyuki Oike ,  Tatsuya Iwasaki ,  Yoshihiro Ohashi

发明人： Tomoyuki Oike ,  Tatsuya Iwasaki ,  Yoshihiro Ohashi

IPC分类号： H01L29/24

CPC分类号： C09K11/565 ,  H01L33/18 ,  H01L33/28 ,  H05B33/14

摘要： Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.

摘要翻译： 提供一种具有可控电阻率的发光膜和可以使用这种发光膜在低电压下驱动的高亮度发光装置。 发光膜包含Cu作为添加元素，作为基材的硫化锌化合物，其中硫化锌化合物包括柱状ZnS晶体，ZnS晶体与ZnS晶体接触的晶界上由硫化铜形成的部位 彼此。

公开(公告)号：US08003981B2

公开(公告)日：2011-08-23

申请号：US12282000

申请日：2007-08-03

申请人： Tatsuya Iwasaki ,  Hideya Kumomi

发明人： Tatsuya Iwasaki ,  Hideya Kumomi

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78621

摘要： The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.

摘要翻译： 本发明提供一种场效应晶体管，其包括作为半导体层的氧化膜，其中氧化膜包括加入氢和氘之一的源极部分和漏极部分之一。

公开(公告)号：US07956346B2

公开(公告)日：2011-06-07

申请号：US11371909

申请日：2006-03-10

申请人： Tatsuya Iwasaki ,  Toru Den

发明人： Tatsuya Iwasaki ,  Toru Den

IPC分类号： H01L29/06

CPC分类号： H01L33/16 ,  H01L33/18 ,  H01L51/5092 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting device includes a substrate, a first electrode layer, a light emitting layer, a structure layer and a second electrode layer. The structure layer has first domains composed of a first material having a columnar shape and second domains composed of a second material, and on the substrate the structure layer and the light emitting layer are laminated between the first electrode layer and the second electrode layer.

摘要翻译： 发光器件包括衬底，第一电极层，发光层，结构层和第二电极层。 结构层具有由具有柱状的第一材料和由第二材料构成的第二区域构成的第一区域，并且在该基板上，在第一电极层和第二电极层之间层叠结构层和发光层。

公开(公告)号：US07952299B2

公开(公告)日：2011-05-31

申请号：US12248279

申请日：2008-10-09

申请人： Tatsuya Iwasaki

发明人： Tatsuya Iwasaki

IPC分类号： H05B37/00

CPC分类号： H02M3/33507 ,  H02M1/36

摘要： A first voltage comparator makes a comparison between a first detection voltage that occurs at one terminal of a first resistor and a predetermined first threshold voltage. A second voltage comparator compares a second detection voltage that occurs at one terminal of a second resistor with a predetermined second threshold voltage. A logic unit generates a switching signal, the level of which is switched according to the output signals of the first voltage comparator and the second voltage comparator, and outputs the switching signal thus generated to the gate of a switching transistor. After a predetermined period of time elapses after the switching signal is switched to the level which turns off the switching transistor, an automatic restart circuit forcibly switches the switching signal to a level which switches the switching transistor to the ON state.

摘要翻译： 第一电压比较器比较在第一电阻器的一个端子处发生的第一检测电压和预定的第一阈值电压之间的比较。 第二电压比较器将在第二电阻器的一个端子处发生的第二检测电压与预定的第二阈值电压进行比较。 逻辑单元产生切换信号，其电平根据第一电压比较器和第二电压比较器的输出信号而被切换，并将所产生的切换信号输出到开关晶体管的栅极。 在切换信号切换到关闭开关晶体管的电平经过预定时间段之后，自动重启电路将开关信号强制切换到将开关晶体管切换到接通状态的电平。

公开(公告)号：US07935582B2

公开(公告)日：2011-05-03

申请号：US12833850

申请日：2010-07-09

申请人： Tatsuya Iwasaki

发明人： Tatsuya Iwasaki

IPC分类号： H01L29/786

CPC分类号： H01L29/78693 ,  H01L29/66969 ,  Y10T29/41

摘要： An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.

公开(公告)号：US07906780B2

公开(公告)日：2011-03-15

申请号：US12097850

申请日：2007-01-11

申请人： Tatsuya Iwasaki

发明人： Tatsuya Iwasaki

IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/66969

摘要： Provided is a field effect transistor, provided with a gate electrode 15, a source electrode 13, and a drain electrode 14 formed on a substrate, including a channel layer 11 formed of an oxide containing In, Zn, or Sn as the main component, and a gate insulating layer 12 provided between the channel layer 11 and the gate electrode 15, in which the gate insulating layer 12 is formed of an amorphous oxide containing Ga as the main component.

摘要翻译： 提供一种场效应晶体管，其设置有形成在基板上的栅电极15，源电极13和漏电极14，其包括由以In，Zn或Sn为主要成分的氧化物形成的沟道层11， 以及栅极绝缘层12，其设置在沟道层11和栅极电极15之间，栅极绝缘层12由以Ga为主要成分的非晶氧化物形成。

公开(公告)号：US07847362B2

公开(公告)日：2010-12-07

申请号：US12166467

申请日：2008-07-02

申请人： Masaya Ogino ,  Tatsuya Iwasaki

发明人： Masaya Ogino ,  Tatsuya Iwasaki

IPC分类号： H01L31/06

CPC分类号： H01L27/14645 ,  H01L27/14601 ,  H01L27/14625 ,  H01L31/02327

摘要： A photo detector includes a photoelectric conversion layer having a periodic structure made of a semiconductor material on a surface of the photoelectric conversion layer. In the photo detector, at least a part of a resonance region formed by the periodic structure is included in the photoelectric conversion layer of the photo detector.

摘要翻译： 光电检测器包括在光电转换层的表面上具有由半导体材料制成的周期性结构的光电转换层。 在光检测器中，由光电检测器的光电转换层中包含由周期性结构形成的谐振区域的至少一部分。