公开(公告)号：US6110832A

公开(公告)日：2000-08-29

申请号：US301050

申请日：1999-04-28

Applicant: Clifford O. Morgan, III ,  Matthew J. Rutten ,  Erick G. Walton ,  Terrance M. Wright

Inventor： Clifford O. Morgan, III ,  Matthew J. Rutten ,  Erick G. Walton ,  Terrance M. Wright

IPC: H01L21/302 ,  C09G1/02 ,  H01L21/00

CPC classification number: B24B37/26 ,  C09G1/02

Abstract: A method and apparatus for Chemical-Mechanical Polishing of semiconductor wafers using various formulations of high viscosity slurry.

Abstract translation: 使用高粘度浆料的各种配方的半导体晶片化学机械抛光的方法和装置。

公开(公告)号：US5877589A

公开(公告)日：1999-03-02

申请号：US819346

申请日：1997-03-18

Applicant: Clifford O. Morgan ,  Matthew J. Rutten ,  Erick G. Walton ,  Terrance M. Wright

Inventor： Clifford O. Morgan ,  Matthew J. Rutten ,  Erick G. Walton ,  Terrance M. Wright

IPC: H01J17/49 ,  H01J65/04

CPC classification number: H01J11/00 ,  H01J17/49 ,  H01J65/042

Abstract: A gas discharge illumination device is prepared by encapsulating ionizable gas within microporous or nanoscale sealed cavities created within a matrix material. Upon exposure of said matrix material to an electric field, the ionizable gas becomes ionized and emits light. By incorporating several different ionizable gases into one matrix material, a display with different colors of light can be produced. The gas discharge illumination device can be fabricated by a variety of techniques including selective cavity formation with overcoating taking place in an ionizable gas ambient, and bubbling ionizable gas through the matrix material while it is in viscous form. The gas discharge illumination device can be used to form either active or passive displays, as a sensor for detecting electric fields, and in other applications.

Abstract translation: 气体放电照明装置通过将可电离气体封装在基体材料内产生的微孔或纳米级密封空腔内来制备。 当将所述基体材料暴露于电场时，可离子化气体被离子化并发光。 通过将几种不同的可电离气体并入一种基质材料中，可以产生具有不同颜色的光的显示器。 气体放电照明装置可以通过各种技术制造，包括在可电离气体环境中发生外涂层的选择性空腔形成，以及当其为粘性形式时通过基质材料鼓泡可电离气体。 气体放电照明装置可用于形成有源或无源显示器，作为用于检测电场的传感器以及其它应用。

公开(公告)号：US5913713A

公开(公告)日：1999-06-22

申请号：US904288

申请日：1997-07-31

Applicant: Roger W. Cheek ,  John E. Cronin ,  Douglas P. Nadeau ,  Matthew J. Rutten ,  Terrance M. Wright

Inventor： Roger W. Cheek ,  John E. Cronin ,  Douglas P. Nadeau ,  Matthew J. Rutten ,  Terrance M. Wright

IPC: B24B37/26 ,  B24D13/12 ,  B24D13/14 ,  B24B1/00

CPC classification number: B24B37/26

Abstract: A polishing pad and method of polishing with a chemical mechanical planarization apparatus includes providing a bulk polishing pad material having a front polishing surface side and a back side. The polishing pad further includes a polishing pad wear indicator for indicating a polishing pad wear during a life cycle of the polishing pad. The polishing pad wear indicator is formed on the back side of the bulk polishing pad material.

Abstract translation: 抛光垫和用化学机械平面化装置抛光的方法包括提供具有前抛光表面侧和背面的主抛光垫材料。 抛光垫还包括用于在抛光垫的寿命周期内指示抛光垫磨损的抛光垫磨损指示器。 抛光垫磨损指示器形成在大量抛光垫材料的背面上。

公开(公告)号：US5034348A

公开(公告)日：1991-07-23

申请号：US567992

申请日：1990-08-16

Applicant: Thomas J. Hartswick ,  Carter W. Kaanta ,  Pei-Ing P. Lee ,  Terrance M. Wright

Inventor： Thomas J. Hartswick ,  Carter W. Kaanta ,  Pei-Ing P. Lee ,  Terrance M. Wright

IPC: H01L21/027 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/8234 ,  H01L23/52 ,  H01L27/06 ,  H01L29/78

CPC classification number: H01L29/66575 ,  H01L21/0276 ,  H01L21/28052 ,  H01L21/28123 ,  H01L21/28518

Abstract: A method for forming reactive metal silicide layers at two spaced locations on a silicon substrate, which layers can be of different thicknesses and/or of different reactive metals is provided. A sililcon substrate has a silicon dioxide layer formed thereon followed by the formation of a polysilicon layer on the silicon dioxide layer, followed by forming a layer of refractory metal, e.g. titanium on the polysilicon. A non-reflecting material, e.g. titanium nitride is formed on the refractory metal. Conventional photoresist techniques are used to pattern the titanium nitride, the titanium and polysilicon, and the titanium is reacted with the contacted polysilicon to form a titanium silicide. The portion of silicon dioxide overlying the silicon substrate is then removed and the exposed substrate is ion implanted to form source/drain regions. A second layer of refractory metal, either titanium or some other refractory metal, is deposited over the source/drain region, and either over the titanium nitride, or over the first formed silicide by first removing the titanium nitride. The second layer of refractory metal is reacted with the substrate at the source/drain region to form a refractory metal silicide, after which the unreacted refractory metal is removed.

公开(公告)号：US4919750A

公开(公告)日：1990-04-24

申请号：US342616

申请日：1989-04-24

Applicant: Robert C. Bausmith ,  William J. Cote ,  John E. Cronin ,  Karey L. Holland ,  Carter W. Kaanta ,  Pei-Ing P. Lee ,  Terrance M. Wright

Inventor： Robert C. Bausmith ,  William J. Cote ,  John E. Cronin ,  Karey L. Holland ,  Carter W. Kaanta ,  Pei-Ing P. Lee ,  Terrance M. Wright

IPC: C23F4/00 ,  H01L21/3213

CPC classification number: C23F4/00 ,  H01L21/32136

Abstract: A method for dry etching metals that form low volatility chlordes, in which Z-Cl reaction products are controllably introduced into a conventional Cl-based plasma independent of the workpiece. The Z-Cl products (e.g., AlCl.sub.3, GaCl.sub.3, etc.) are metal chlorides that have both electron acceptor and chloride donor properties. Thus, metals M (e.g., cobalt, copper and nickel) that usually produce low volatility chlorides can be controllably complexed to form high volatility Z.sub.x Cl.sub.y M.sub.z reaction products.

Abstract translation: 用于干蚀刻形成低挥发性氯的金属的方法，其中Z-Cl反应产物可以独立于工件被可控地引入到常规的基于Cl的等离子体中。 Z-Cl产物（例如，AlCl 3，GaCl 3等）是具有电子受体和氯化物给体性质的金属氯化物。 因此，通常产生低挥发性氯化物的金属M（例如钴，铜和镍）可以可控地复合以形成高挥发性Z x ClyMz反应产物。

公开(公告)号：US4786360A

公开(公告)日：1988-11-22

申请号：US31813

申请日：1987-03-30

Applicant: William J. Cote ,  Karey L. Holland ,  Terrance M. Wright

Inventor： William J. Cote ,  Karey L. Holland ,  Terrance M. Wright

IPC: C23F4/00 ,  H01L21/3213 ,  B44C1/22

CPC classification number: C23F4/00 ,  H01L21/32136

Abstract: A method for anisotropically etching a thick tungsten layer atop a thin underlayer comprised of titanium nitride, by exposure to a gaseous plasma comprised of a binary mixture of chlorine gas and oxygen, wherein oxygen comprises approximately 25%-45% of the mixture by volume. This plasma provides a combination of high tungsten etch rate, highly uniform etching, anisotropic profiles, and high etch rate ratio to underlaying glass passivation layers.