公开(公告)号：US09128547B2

公开(公告)日：2015-09-08

申请号：US13639830

申请日：2011-02-28

申请人： Tetsuhiro Kodani ,  Yuuki Kuwajima ,  Eri Mukai ,  Takashi Kanemura ,  Meiten Koh ,  Kenji Omote ,  Hiroji Ohigashi

发明人： Tetsuhiro Kodani ,  Yuuki Kuwajima ,  Eri Mukai ,  Takashi Kanemura ,  Meiten Koh ,  Kenji Omote ,  Hiroji Ohigashi

IPC分类号： H01L41/047 ,  G01L7/08 ,  G01L9/06 ,  G06F3/041

CPC分类号： G06F3/041 ,  G06F2203/04105 ,  H01L41/0478 ,  H01L41/1132 ,  H01L41/193

摘要： A transparent piezoelectric sheet includes a quadrilateral-shaped transparent piezoelectric film and a first transparent plate electrode. The quadrilateral-shaped transparent piezoelectric film includes an organic polymer. The quadrilateral-shaped transparent piezoelectric film has entire main surfaces that are piezoelectric. The first transparent plate electrode is layered on part of a first main surface of the main surfaces of the transparent piezoelectric film. One to three sides of the four sides of the quadrilateral shape of the transparent piezoelectric film and area(s) of the first main surface adjacent thereto are not covered by the first transparent plate electrode.

摘要翻译： 透明压电片包括四边形透明压电膜和第一透明板电极。 四边形透明压电膜包括有机聚合物。 四边形透明压电膜具有压电的整个主表面。 第一透明板电极层叠在透明压电膜的主表面的第一主表面的一部分上。 透明压电薄膜的四边形四边形的一侧到另一侧，与其相邻的第一主表面的一个或多个区域不被第一透明板电极覆盖。

公开(公告)号：US08450439B2

公开(公告)日：2013-05-28

申请号：US12641183

申请日：2009-12-17

申请人： Takayuki Araki ,  Tetsuhiro Kodani

发明人： Takayuki Araki ,  Tetsuhiro Kodani

IPC分类号： C08F14/18

CPC分类号： C08F114/22 ,  C07C21/18 ,  Y10T428/3154 ,  Y10T428/31544

摘要： There is provided a method of forming a thin film of vinylidene fluoride homopolymer having crystal form I which is applicable to various substrates in relatively easy way (coating conditions, application method, etc.), a process for preparing a vinylidene fluoride homopolymer having crystal form I efficiently at high purity, and novel vinylidene fluoride homopolymers which can give a thin film being excellent in ferroelectricity. The method of forming a thin film of vinylidene fluoride homopolymer comprises (i) a step for preparing a green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component by subjecting vinylidene fluoride to radical polymerization in the presence of a bromine compound or iodine compound having 1 to 20 carbon atoms which contains at least one moiety represented by —CRf1Rf2X1, wherein X1. is iodine atom or bromine atom; Rf1. and Rf2. are the same or different and each is selected from fluorine atom or perfluoroalkyl groups having 1 to 5 carbon atoms and (ii) a step for forming a thin film on a substrate surface by using vinylidene fluoride homopolymer which comprises crystal form I alone or as main component and is obtained from the green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component.

摘要翻译： 提供一种以相对容易的方式（涂布条件，涂布方法等）形成可以适用于各种基材的结晶形式I的偏二氟乙烯均聚物的薄膜的方法，制备具有结晶形式的偏二氟乙烯均聚物 我高效率地得到高纯度的新型偏二氟乙烯均聚物，可以得到铁电性优异的薄膜。 形成偏氟乙烯均聚物薄膜的方法包括（i）通过在溴化合物的存在下使偏二氟乙烯进行自由基聚合，制备单晶或单体晶形的偏二氟乙烯均聚物的生粉产物的步骤 或含有至少一个由-CR f 1 R f 2 X 1表示的部分的具有1至20个碳原子的碘化合物，其中X1。 是碘原子或溴原子; Rf1。 和Rf2。 相同或不同，分别选自具有1至5个碳原子的氟原子或全氟烷基，和（ii）通过使用单晶形式的主要含氟乙烯均聚物或作为主要成分的偏氟乙烯均聚物在基材表面上形成薄膜的步骤 从单独的晶形I或作为主要成分的偏氟乙烯均聚物的绿色粉末产品获得。

公开(公告)号：US20100249324A1

公开(公告)日：2010-09-30

申请号：US12754265

申请日：2010-04-05

申请人： Tetsuhiro KODANI ,  Yuji Imahori

发明人： Tetsuhiro KODANI ,  Yuji Imahori

IPC分类号： C08L27/16

CPC分类号： C08J5/18 ,  C08F6/00 ,  C08F114/22 ,  C08J2327/16 ,  C08L27/16

摘要： The present invention provides a process for easily preparing a vinylidene fluoride homopolymer comprising an I-form crystal structure at high purity by selecting a solvent, and the process for preparing the vinylidene fluoride homopolymer comprises not less than 70% by mass of I-form crystal structure, which is obtained by dissolving a vinylidene fluoride homopolymer having a number average degree of polymerization of 3 to 20 in a solvent consisting of an organic solvent having a dipole moment of not less than 2.8 alone or comprising the organic solvent in a part, thereafter, evaporating the solvent.

摘要翻译： 本发明提供一种通过选择溶剂容易地制备含有高纯度I型晶体结构的偏二氟乙烯均聚物的方法，制备偏二氟乙烯均聚物的方法包括不少于70质量％的I型晶体 结构，其通过将数均聚合度为3〜20的偏二氟乙烯均聚物溶解在单独偶极矩不小于2.8的有机溶剂或部分包含有机溶剂的溶剂中，然后 ，蒸发溶剂。

公开(公告)号：US09200970B2

公开(公告)日：2015-12-01

申请号：US13639825

申请日：2011-02-28

申请人： Tetsuhiro Kodani ,  Yuuki Kuwajima ,  Eri Mukai ,  Meiten Koh ,  Takashi Kanemura ,  Kenji Omote ,  Hiroji Ohigashi

发明人： Tetsuhiro Kodani ,  Yuuki Kuwajima ,  Eri Mukai ,  Meiten Koh ,  Takashi Kanemura ,  Kenji Omote ,  Hiroji Ohigashi

IPC分类号： H01L41/053 ,  H01L41/193 ,  G06F3/041 ,  G01L1/16

CPC分类号： G01L1/16 ,  G06F3/041 ,  G06F2203/04105

摘要： A transparent piezoelectric sheet-with-a-frame includes a transparent piezoelectric sheet and a frame covering a peripheral edge portion of the transparent piezoelectric sheet. The transparent piezoelectric sheet includes one transparent piezoelectric film including an organic polymer, one first transparent plate electrode placed on a first main surface of the transparent piezoelectric film and having a first transparent plate electrode portion, and one second transparent plate electrode placed on a second main surface of the transparent piezoelectric film and having a second transparent plate electrode portion. An outline of the second transparent plate electrode portion is positioned inside an outline of the first transparent plate electrode portion as seen in a plan view. The outline of the first transparent plate electrode portion completely coincides with the frame, and the outline of the second transparent plate electrode portion does not at all coincide with the frame as seen in the plan view.

摘要翻译： 透明的压电片式框架包括透明压电片和覆盖透明压电片的周缘部的框架。 透明压电片包括一个透明压电薄膜，它包括一个有机聚合物，一个第一透明板电极放置在透明压电薄膜的第一主表面上，并具有第一透明板电极部分，一个第二透明板电极放置在第二主体上 并具有第二透明板电极部分。 第二透明板电极部分的轮廓位于第一透明板电极部分的轮廓内，如平面图所示。 第一透明板电极部分的轮廓与框架完全一致，并且如平面图所示，第二透明板电极部分的轮廓与框架完全不一致。

公开(公告)号：US20130027340A1

公开(公告)日：2013-01-31

申请号：US13639830

申请日：2011-02-28

申请人： Tetsuhiro Kodani ,  Yuuki Kuwajima ,  Eri Mukai ,  Takashi Kanemura ,  Meiten Koh ,  Kenji Omote ,  Hiroji Ohigashi

发明人： Tetsuhiro Kodani ,  Yuuki Kuwajima ,  Eri Mukai ,  Takashi Kanemura ,  Meiten Koh ,  Kenji Omote ,  Hiroji Ohigashi

IPC分类号： H01L41/047 ,  H01L41/193 ,  H01L41/053 ,  G06F3/041

CPC分类号： G06F3/041 ,  G06F2203/04105 ,  H01L41/0478 ,  H01L41/1132 ,  H01L41/193

摘要： A transparent piezoelectric sheet includes a quadrilateral-shaped transparent piezoelectric film and a first transparent plate electrode. The quadrilateral-shaped transparent piezoelectric film includes an organic polymer. The quadrilateral-shaped transparent piezoelectric film has entire main surfaces that are piezoelectric. The first transparent plate electrode is layered on part of a first main surface of the main surfaces of the transparent piezoelectric film. One to three sides of the four sides of the quadrilateral shape of the transparent piezoelectric film and area(s) of the first main surface adjacent thereto are not covered by the first transparent plate electrode.

摘要翻译： 透明压电片包括四边形透明压电膜和第一透明板电极。 四边形透明压电膜包括有机聚合物。 四边形透明压电膜具有压电的整个主表面。 第一透明板电极层叠在透明压电膜的主表面的第一主表面的一部分上。 透明压电薄膜的四边形四边形的一侧到另一侧，与其相邻的第一主表面的一个或多个区域不被第一透明板电极覆盖。

公开(公告)号：US20090226622A1

公开(公告)日：2009-09-10

申请号：US11659361

申请日：2005-07-11

申请人： Tetsuhiro Kodani ,  Yuji Imahori

发明人： Tetsuhiro Kodani ,  Yuji Imahori

IPC分类号： B05D3/00 ,  C08F214/22

CPC分类号： C08J5/18 ,  C08F6/00 ,  C08F114/22 ,  C08J2327/16 ,  C08L27/16

摘要： The present invention provides a process for easily preparing a vinylidene fluoride homopolymer comprising an I-form crystal structure at high purity by selecting a solvent, and the process for preparing the vinylidene fluoride homopolymer comprises not less than 70% by mass of I-form crystal structure, which is obtained by dissolving a vinylidene fluoride homopolymer having a number average degree of polymerization of 3 to 20 in a solvent consisting of an organic solvent having a dipole moment of not less than 2.8 alone or comprising the organic solvent in a part, thereafter, evaporating the solvent.

摘要翻译： 本发明提供一种通过选择溶剂容易地制备含有高纯度I型晶体结构的偏二氟乙烯均聚物的方法，制备偏二氟乙烯均聚物的方法包括不少于70质量％的I型晶体 结构，其通过将数均聚合度为3〜20的偏二氟乙烯均聚物溶解在单独偶极矩不小于2.8的有机溶剂或部分包含有机溶剂的溶剂中，然后 ，蒸发溶剂。

公开(公告)号：US20090072143A1

公开(公告)日：2009-03-19

申请号：US12282552

申请日：2007-03-19

申请人： Kenji Ishida ,  Shuichiro Kuwajima ,  Kazumi Matsushige ,  Toshihisa Horiuchi ,  Arifumi Matsumoto ,  Tetsuhiro Kodani ,  Meiten Koh

发明人： Kenji Ishida ,  Shuichiro Kuwajima ,  Kazumi Matsushige ,  Toshihisa Horiuchi ,  Arifumi Matsumoto ,  Tetsuhiro Kodani ,  Meiten Koh

IPC分类号： G01J5/00

CPC分类号： G01J5/34 ,  H01L37/025

摘要： There is provided a pyroelectric infrared sensor being capable of changing its shape and having high sensitivity. The sensor comprises the substrate 11 made of a polymer material such as polyimide or polyethylene terephthalate and having flexibility, the layer 13 comprising vinylidene fluoride (VDF), and the flexible electrodes 12 and 14 comprising an Al-deposited film and provided on and under the VDF oligomer layer 13. The pyroelectric infrared sensor of the present invention has flexibility as a whole due to flexibility of each component elements and can be formed into desired shapes. In addition, since a substrate made of a polymer material has heat capacity and heat conductivity lower than those of Si substrates used on conventional pyroelectric infrared sensors, sensitivity of the sensor can be increased.

摘要翻译： 提供了能够改变其形状并具有高灵敏度的热释电红外传感器。 该传感器包括由诸如聚酰亚胺或聚对苯二甲酸乙二醇酯的聚合物材料制成并具有柔性的衬底11，包含偏二氟乙烯（VDF）的层13以及包含Al沉积膜的柔性电极12和14， VDF低聚物层13.本发明的热电型红外线传感器由于各构成要素的柔软性而具有整体的柔软性，可以形成为所希望的形状。 此外，由于由聚合物材料制成的基板具有比常规热电型红外线传感器所使用的Si基板的热容量和导热率低的传热装置，所以能够提高传感器的灵敏度。

公开(公告)号：US20070231462A1

公开(公告)日：2007-10-04

申请号：US11231976

申请日：2005-09-22

申请人： Takayuki Araki ,  Tetsuhiro Kodani

发明人： Takayuki Araki ,  Tetsuhiro Kodani

IPC分类号： B05D5/12 ,  B05D1/12 ,  C23C16/00 ,  B05D3/00 ,  B05D7/00

CPC分类号： C08F14/22 ,  H01L41/317 ,  H01L41/45

摘要： There is provided a method of forming a ferroelectric thin film of vinylidene fluoride homopolymer having crystal form I which is applicable to various substrates in relatively easy way (coating conditions, application method, etc.). The method of forming a ferroelectric thin film comprising vinylidene fluoride homopolymer comprises the step (i) for preparing a green powder of vinylidene fluoride homopolymer comprising crystal form I alone or as main component by subjecting vinylidene fluoride to radical polymerization in the presence of a radical polymerization initiator, the step (ii) for forming a thin film on a substrate surface by using vinylidene fluoride homopolymer which comprises crystal form I alone or as main component and is obtained from the green powder product of vinylidene fluoride homopolymer comprising I-form crystal structure alone or as main component, and the step (iii) for subjecting the thin film of vinylidene fluoride homopolymer formed in the step of above (ii) to polarization.

摘要翻译： 提供一种形成具有结晶形式I的偏氟乙烯均聚物的铁电薄膜的方法，其可以相对容易的方式（涂布条件，涂布方法等）适用于各种基材。 包含偏二氟乙烯均聚物的铁电薄膜的形成方法包括步骤（i）：在自由基聚合的存在下，通过使偏二氟乙烯进行自由基聚合，制备单独晶体形式I或主要成分的偏二氟乙烯均聚物的绿色粉末 引发剂，用于通过使用仅含晶形I或作为主要成分的偏氟乙烯均聚物在基材表面上形成薄膜的步骤（ii），并且由单独的I型晶体结构的偏二氟乙烯均聚物的绿色粉末产物获得 或作为主要成分的步骤（iii），使上述（ii）的工序中形成的偏氟乙烯均聚物的薄膜进行极化。

公开(公告)号：US20060014912A1

公开(公告)日：2006-01-19

申请号：US11231992

申请日：2005-09-22

申请人： Takayuki Araki ,  Tetsuhiro Kodani

发明人： Takayuki Araki ,  Tetsuhiro Kodani

IPC分类号： C08F114/18

CPC分类号： C08F114/22 ,  C07C21/18 ,  Y10T428/3154 ,  Y10T428/31544

摘要： There is provided a method of forming a thin film of vinylidene fluoride homopolymer having crystal form I which is applicable to various substrates in relatively easy way (coating conditions, application method, etc.), a process for preparing a vinylidene fluoride homopolymer having crystal form I efficiently at high purity, and novel vinylidene fluoride homopolymers which can give a thin film being excellent in ferroelectricity. The method of forming a thin film of vinylidene fluoride homopolymer comprises (i) a step for preparing a green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component by subjecting vinylidene fluoride to radical polymerization in the presence of a bromine compound or iodine compound having 1 to 20 carbon atoms which contains at least one moiety represented by —CRf1Rf2X1, wherein X1 is iodine atom or bromine atom; Rf1 and Rf2 are the same or different and each is selected from fluorine atom or perfluoroalkyl groups having 1 to 5 carbon atoms and (ii) a step for forming a thin film on a substrate surface by using vinylidene fluoride homopolymer which comprises crystal form I alone or as main component and is obtained from the green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component.

摘要翻译： 提供一种以相对容易的方式（涂布条件，涂布方法等）形成可以适用于各种基材的结晶形式I的偏二氟乙烯均聚物的薄膜的方法，制备具有结晶形式的偏二氟乙烯均聚物 我高效率地得到高纯度的新型偏二氟乙烯均聚物，可以得到铁电性优异的薄膜。 形成偏氟乙烯均聚物薄膜的方法包括（i）通过在溴化合物的存在下使偏二氟乙烯进行自由基聚合，制备单晶或单体晶形的偏二氟乙烯均聚物的生粉产物的步骤 或具有1〜20个碳原子的碘化合物，其含有至少一个由-CR 1，...，R 2，...，X 1表示的部分，其中X ^{1 是碘原子或溴原子; Rf 1和Rf 2相同或不同，各自选自具有1至5个碳原子的氟原子或全氟烷基，和（ii）形成薄的 通过使用包含单晶晶体I或主要成分的偏二氟乙烯均聚物在基材表面上形成薄膜，并且由包含单晶晶体I或主要组分的偏二氟乙烯均聚物的绿色粉末产品获得。}

公开(公告)号：US20100093962A1

公开(公告)日：2010-04-15

申请号：US12641183

申请日：2009-12-17

申请人： Takayuki Araki ,  Tetsuhiro Kodani

发明人： Takayuki Araki ,  Tetsuhiro Kodani

IPC分类号： C08F214/22

CPC分类号： C08F114/22 ,  C07C21/18 ,  Y10T428/3154 ,  Y10T428/31544

摘要： There is provided a method of forming a thin film of vinylidene fluoride homopolymer having crystal form I which is applicable to various substrates in relatively easy way (coating conditions, application method, etc.), a process for preparing a vinylidene fluoride homopolymer having crystal form I efficiently at high purity, and novel vinylidene fluoride homopolymers which can give a thin film being excellent in ferroelectricity. The method of forming a thin film of vinylidene fluoride homopolymer comprises (i) a step for preparing a green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component by subjecting vinylidene fluoride to radical polymerization in the presence of a bromine compound or iodine compound having 1 to 20 carbon atoms which contains at least one moiety represented by —CRf1Rf2X1, wherein X1 is iodine atom or bromine atom; Rf1 and Rf2 are the same or different and each is selected from fluorine atom or perfluoroalkyl groups having 1 to 5 carbon atoms and (ii) a step for forming a thin film on a substrate surface by using vinylidene fluoride homopolymer which comprises crystal form I alone or as main component and is obtained from the green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component.

摘要翻译： 提供一种以相对容易的方式（涂布条件，涂布方法等）形成可以适用于各种基材的结晶形式I的偏二氟乙烯均聚物的薄膜的方法，制备具有结晶形式的偏二氟乙烯均聚物 我高效率地得到高纯度的新型偏二氟乙烯均聚物，可以得到铁电性优异的薄膜。 形成偏氟乙烯均聚物薄膜的方法包括（i）通过在溴化合物的存在下使偏二氟乙烯进行自由基聚合，制备单晶或单体晶形的偏二氟乙烯均聚物的生粉产物的步骤 或含有至少一个由-CR f 1 R f 2 X 1表示的部分的碳原子数为1〜20的碘化合物，其中X1为碘原子或溴原子; Rf1和Rf2相同或不同，分别选自具有1〜5个碳原子的氟原子或全氟烷基，（ii）通过使用仅含有晶型I的偏二氟乙烯均聚物在基板表面上形成薄膜的步骤 或作为主要成分，并且由包含单晶晶体I或主要成分的偏二氟乙烯均聚物的绿色粉末产品获得。