公开(公告)号：US5082163A

公开(公告)日：1992-01-21

申请号：US451299

申请日：1989-12-15

申请人： Naoyuki Kanahara ,  Tetsuo Furihata

发明人： Naoyuki Kanahara ,  Tetsuo Furihata

IPC分类号： C04B41/51 ,  C04B41/88

CPC分类号： C04B41/009 ,  C04B41/5127 ,  C04B41/88 ,  C04B2111/00844

摘要： A non-oxide ceramic material such as aluminum nitride can be metallized with copper by directly bonding a thin sheet of copper to a substrate of the non-oxide ceramic material instead of using a conventional manner in which a paste comprising a powder of copper and a binder is applied to a ceramic substrate by printing. This metallization is effected by placing the non-oxide ceramic material either in contact with or in close proximity to copper containing a copper oxide, followed by heating them in a non-oxidizing atmosphere at a temperature lower than the melting point of copper, but at which the dissociation of the copper oxide contained in copper can occur, so as to dissociate at least part of the copper oxide into metallic copper and oxygen to thereby provide a strong bondage between the surfaces of said non-oxide ceramic material and copper. The metallized non-oxide ceramic material can be used as a substrate for use in IC devices.

摘要翻译： 非氧化物陶瓷材料如氮化铝可以通过将铜薄片直接粘合到非氧化物陶瓷材料的基材上而用铜金属化，而不是使用常规方式，其中包括铜和 通过印刷将粘合剂施加到陶瓷基板上。 这种金属化是通过将非氧化物陶瓷材料与含有氧化铜的铜接触或接近铜，然后在低于铜的熔点的温度下在非氧化性气氛中加热，但在 可以发生铜中所含的氧化铜的解离，从而将至少一部分氧化铜解离为金属铜和氧，从而在所述非氧化物陶瓷材料的表面和铜之间提供牢固的结合。 金属化非氧化物陶瓷材料可以用作用于IC器件的基板。

公开(公告)号：US4811893A

公开(公告)日：1989-03-14

申请号：US126601

申请日：1987-11-30

申请人： Naoyuki Kanahara ,  Masahiro Furo ,  Tetsuo Furihata

发明人： Naoyuki Kanahara ,  Masahiro Furo ,  Tetsuo Furihata

IPC分类号： B32B15/04 ,  C04B37/02 ,  H05K1/03 ,  H05K3/02 ,  H05K3/38 ,  B23K35/38 ,  B23K20/14

CPC分类号： C04B37/021 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/658 ,  C04B2235/6585 ,  C04B2237/343 ,  C04B2237/407 ,  C04B2237/52 ,  C04B2237/706 ,  H05K1/0306 ,  H05K3/022 ,  H05K3/38

摘要： A novel method for directly bonding a copper plate to an alumina substrate is disclosed. Also disclosed is a process by which bonded assembles of copper plate and alumina substrate can be produced in large volumes on an industrial scale in high yield and at low cost employing a simplified sequence of steps. According to this process, a copper plate is positioned in contact with an alumina substrate in an inert atmosphere, and the combination is heated to a temperature lower than the melting point of copper (1,083.degree. C.), preferably to a temperature lower than the eutectic point of copper-copper oxide eutectic, for example, to 1,063.degree. C..+-.0.5.degree. C., so that a compound of copper with alumina on the surface of the alumina substrate and a compound of copper with at least one glass forming material on said surface are formed without forming the liquidus eutectic of copper and copper oxide in the area of contact between the copper plate and the alumina substrate, and thereafter the combination is cooled to establish direct bond between the two members. Also disclosed herein are specific techniques that may be employed to produce bonded assemblies in large quantities by the present invention using an industrial conveyor furnace, such as those concerning the method of positioning the combination of copper plates and alumina substrates to be charged into the furnace, the temperature in the furnace and the atmosphere therein.

摘要翻译： 公开了一种用于将铜板直接接合到氧化铝基底的新方法。 还公开了一种方法，通过这种方法可以使用简单的步骤顺序以高产率和低成本以大量生产大量的铜板和氧化铝基底。 根据该方法，在惰性气氛中将铜板与氧化铝基板接触，将该组合加热到低于铜的熔点（1083℃）的温度，优选为低于 铜 - 铜氧化物共晶的共晶点，例如为-1063℃±0.5℃，使得在氧化铝衬底的表面上具有氧化铝的铜化合物和至少一种玻璃的铜化合物 在铜板和氧化铝基板之间的接触区域中形成不形成铜和氧化铜的液相共晶体的所述表面上的形成材料，然后冷却组合以在两个构件之间建立直接结合。 本文还公开了可用于通过本发明使用工业输送炉来大量生产粘合组件的具体技术，例如关于将要装入炉中的铜板和氧化铝基底的组合定位的方法， 炉内的温度和其中的气氛。