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8 条记录 (耗时 0.017 秒)

    Method for bonding copper plate to alumina substrate and process for producing copper/alumina bonded assembly
    1.
    发明授权
    Method for bonding copper plate to alumina substrate and process for producing copper/alumina bonded assembly 失效
    将铜板接合到氧化铝基板的方法和用于生产铜/氧化铝粘结组件的方法

    公开(公告)号：US4811893A

    公开(公告)日：1989-03-14

    申请号：US126601

    申请日：1987-11-30

    申请人： Naoyuki Kanahara ,  Masahiro Furo ,  Tetsuo Furihata

    发明人： Naoyuki Kanahara ,  Masahiro Furo ,  Tetsuo Furihata

    IPC分类号： B32B15/04 ,  C04B37/02 ,  H05K1/03 ,  H05K3/02 ,  H05K3/38 ,  B23K35/38 ,  B23K20/14

    CPC分类号： C04B37/021 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/658 ,  C04B2235/6585 ,  C04B2237/343 ,  C04B2237/407 ,  C04B2237/52 ,  C04B2237/706 ,  H05K1/0306 ,  H05K3/022 ,  H05K3/38

    摘要： A novel method for directly bonding a copper plate to an alumina substrate is disclosed. Also disclosed is a process by which bonded assembles of copper plate and alumina substrate can be produced in large volumes on an industrial scale in high yield and at low cost employing a simplified sequence of steps. According to this process, a copper plate is positioned in contact with an alumina substrate in an inert atmosphere, and the combination is heated to a temperature lower than the melting point of copper (1,083.degree. C.), preferably to a temperature lower than the eutectic point of copper-copper oxide eutectic, for example, to 1,063.degree. C..+-.0.5.degree. C., so that a compound of copper with alumina on the surface of the alumina substrate and a compound of copper with at least one glass forming material on said surface are formed without forming the liquidus eutectic of copper and copper oxide in the area of contact between the copper plate and the alumina substrate, and thereafter the combination is cooled to establish direct bond between the two members. Also disclosed herein are specific techniques that may be employed to produce bonded assemblies in large quantities by the present invention using an industrial conveyor furnace, such as those concerning the method of positioning the combination of copper plates and alumina substrates to be charged into the furnace, the temperature in the furnace and the atmosphere therein.

    摘要翻译： 公开了一种用于将铜板直接接合到氧化铝基底的新方法。 还公开了一种方法，通过这种方法可以使用简单的步骤顺序以高产率和低成本以大量生产大量的铜板和氧化铝基底。 根据该方法，在惰性气氛中将铜板与氧化铝基板接触，将该组合加热到低于铜的熔点（1083℃）的温度，优选为低于 铜 - 铜氧化物共晶的共晶点，例如为-1063℃±0.5℃，使得在氧化铝衬底的表面上具有氧化铝的铜化合物和至少一种玻璃的铜化合物 在铜板和氧化铝基板之间的接触区域中形成不形成铜和氧化铜的液相共晶体的所述表面上的形成材料，然后冷却组合以在两个构件之间建立直接结合。 本文还公开了可用于通过本发明使用工业输送炉来大量生产粘合组件的具体技术，例如关于将要装入炉中的铜板和氧化铝基底的组合定位的方法， 炉内的温度和其中的气氛。

    Insulating substrate boards for semiconductor and power modules
    5.
    发明授权
    Insulating substrate boards for semiconductor and power modules 有权
    半导体和电源模块绝缘基板

    公开(公告)号：US07276292B2

    公开(公告)日：2007-10-02

    申请号：US10087566

    申请日：2002-03-01

    申请人： Masahiro Furo ,  Hideyo Osanai

    发明人： Masahiro Furo ,  Hideyo Osanai

    IPC分类号： B32B15/20 ,  B32B15/04 ,  H01L23/00

    CPC分类号： H01L23/15 ,  C04B2237/407 ,  H01L23/3735 ,  H01L2224/32225 ,  H01L2224/834 ,  H01L2924/01322 ,  Y10T428/12528 ,  Y10T428/12535 ,  Y10T428/12736 ,  H01L2924/00

    摘要： An insulating substrate board for a semiconductor of the present invention comprises a ceramic substrate board (2) and a metal alloy layer (3) consisting of aluminum formed on one surface portion of the ceramic substrate board (2), wherein the Vickers hardness of the metal alloy layer (3) is not less than 25 and not more than 40. The metal alloy layer (3) includes silicon of not less than 0.2% by weight and not more than 5% by weight. The ceramic substrate board (2) is made of a material selected from a group consisting of alumina. aluminum nitride, and silicon nitride. A power module of the present invention comprises a metal base plate (7), a ceramic substrate board (2), one surface of which is bonded to the metal base plate (7), and the other surface of which is bonded on a semiconductor tip (1), at least one surface portion of the ceramic substrate board (2) having a metal alloy layer (3) consisting of aluminum, wherein the Vickers hardness of the metal alloy layer (3) is not less than 25 and not more than 40.

    摘要翻译： 本发明的半导体用绝缘基板包括陶瓷基板（2）和形成在陶瓷基板（2）的一个表面部分上的由铝构成的金属合金层（3），其中维氏硬度 金属合金层（3）不小于25且不大于40.金属合金层（3）包括不小于0.2重量％且不大于5重量％的硅。 陶瓷基板（2）由选自氧化铝的材料制成。 氮化铝和氮化硅。 本发明的电源模块包括金属基板（7），陶瓷基板（2），其一面接合到金属基板（7），另一表面接合在半导体 尖端（1），所述陶瓷基板（2）的至少一个表面部分具有由铝组成的金属合金层（3），其中所述金属合金层（3）的维氏硬度不小于25，而不是更大 超过40。

    Process for producing shape strips of metals
    8.
    发明授权
    Process for producing shape strips of metals 失效
    用于生产金属形状条的方法

    公开(公告)号：US5174363A

    公开(公告)日：1992-12-29

    申请号：US689152

    申请日：1991-04-22

    申请人： Masahiro Furo ,  Hitoshi Endou ,  Tadao Hishinuma

    发明人： Masahiro Furo ,  Hitoshi Endou ,  Tadao Hishinuma

    IPC分类号： B21B1/08 ,  B21B1/46 ,  B21B3/00 ,  B22D11/00 ,  B22D11/04 ,  B22D11/12

    CPC分类号： B21B1/0805 ,  B21B1/463 ,  B22D11/1206 ,  B21B1/08 ,  B21B2003/005 ,  B21B3/00

    摘要： Molten metal is poured into a mold having an inside cross section with varied thicknesses along the direction of the width thereof. The molten metal is allowed to solidify in the mold and the cast strip is withdrawn from the mold either continuously or intermittently. The as-cast strip is rolled at either identical or similar thickness reduction ratios in the direction of width of the strip. This process enables the production of high quality shape strips free from any substantial working deformation in the workpiece.

    摘要翻译： 熔融金属沿其宽度方向倒入具有不同厚度的内侧横截面的模具中。 允许熔融金属在模具中固化，并将铸造带材从模具中连续地或间歇地取出。 铸造带材以条带宽度方向以相同或相似的厚度减小比轧制。 该工艺使得能够生产高质量的形状条，使得工件中没有任何明显的工作变形。