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1.发明授权Metal nanoink and process for producing the metal nanoink, and die bonding method and die bonding apparatus using the metal nanoink 有权金属纳米金属和金属纳米金属的制造工艺，以及使用金属纳米金属的芯片接合方法和芯片接合装置公开(公告)号：US08328928B2
公开(公告)日：2012-12-11
申请号：US13055747
申请日：2009-07-08
申请人： Toru Maeda , Tetsuro Tanikawa , Akinobu Teramoto , Masaaki Oda
发明人： Toru Maeda , Tetsuro Tanikawa , Akinobu Teramoto , Masaaki Oda
CPC分类号： B22F1/0062 , B22F2999/00 , H01L21/4867 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L25/50 , H01L2224/111 , H01L2224/11318 , H01L2224/1152 , H01L2224/1329 , H01L2224/13324 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13355 , H01L2224/13364 , H01L2224/13369 , H01L2224/13399 , H01L2224/16 , H01L2224/75251 , H01L2224/75252 , H01L2224/75745 , H01L2224/75753 , H01L2224/81097 , H01L2224/81193 , H01L2224/81203 , H01L2224/8184 , H01L2225/06513 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01067 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12044 , B22F1/0018 , H01L2924/00014 , H01L2924/00
摘要： Metal nanoink (100) for bonding an electrode of a semiconductor die and an electrode of a substrate and/or bonding an electrode of a semiconductor die and an electrode of another semiconductor die by sintering under pressure is produced by injecting oxygen into an organic solvent (105) in the form of oxygen nanobubbles (125) or oxygen bubbles (121) either before or after metal nanoparticles (101) whose surfaces are coated with a dispersant (102) are mixed into the organic solvent (105). Bumps are formed on the electrode of the semiconductor die and the electrode of the substrate by ejecting microdroplets of the metal nanoink (100) onto the electrodes, the semiconductor die is turned upside down and overlapped in alignment over the substrate, and then, the metal nanoparticles of the bumps are sintered under pressure by pressing and heating the bumps between the electrodes. As a result, generation of voids during sintering under pressure is minimized.
摘要翻译： 通过将氧气注入到有机溶剂中来制造用于将半导体管芯的电极和基板的电极接合和/或接合半导体管芯的电极和另一个半导体管芯的电极的金属纳米管（100） 在其表面涂布有分散剂（102）的金属纳米颗粒（101）之前或之后，将氧纳米气泡（125）或氧气（121）的形式混合到有机溶剂（105）中。 通过将金属纳米线（100）的微滴喷射到电极上，在半导体管芯的电极和基板的电极上形成凸起，将半导体管芯上下颠倒并重叠在衬底上，然后将金属 通过按压和加热电极之间的凸块，在凸起的纳米颗粒被烧结。 结果，在压力下烧结过程中产生的空隙被最小化。
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2.发明申请METAL NANOINK AND PROCESS FOR PRODUCING THE METAL NANOINK, AND DIE BONDING METHOD AND DIE BONDING APPARATUS USING THE METAL NANOINK 审中-公开金属纳米结构和金属纳米结晶的制造工艺和使用金属纳米结构的DIE结合方法和DIE结合装置公开(公告)号：US20130001280A1
公开(公告)日：2013-01-03
申请号：US13590775
申请日：2012-08-21
申请人： Toru MAEDA , Tetsuro TANIKAWA , Akinobu TERAMOTO , Masaaki ODA
发明人： Toru MAEDA , Tetsuro TANIKAWA , Akinobu TERAMOTO , Masaaki ODA
CPC分类号： B22F1/0062 , B22F2999/00 , H01L21/4867 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L25/50 , H01L2224/111 , H01L2224/11318 , H01L2224/1152 , H01L2224/1329 , H01L2224/13324 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13355 , H01L2224/13364 , H01L2224/13369 , H01L2224/13399 , H01L2224/16 , H01L2224/75251 , H01L2224/75252 , H01L2224/75745 , H01L2224/75753 , H01L2224/81097 , H01L2224/81193 , H01L2224/81203 , H01L2224/8184 , H01L2225/06513 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01067 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12044 , B22F1/0018 , H01L2924/00014 , H01L2924/00
摘要： Metal nanoink for bonding an electrode of a semiconductor die and an electrode of a substrate and/or bonding an electrode of a semiconductor die and an electrode of another semiconductor die by sintering under pressure is produced by injecting oxygen into an organic solvent in the form of oxygen nanobubbles or oxygen bubbles either before or after metal nanoparticles whose surfaces are coated with a dispersant are mixed into the organic solvent. Bumps are formed on the electrode of the semiconductor die and the electrode of the substrate by ejecting microdroplets of the metal nanoink onto the electrodes, the semiconductor die is turned upside down and overlapped in alignment over the substrate, and then, the metal nanoparticles of the bumps are sintered under pressure by pressing and heating the bumps between the electrodes. As a result, generation of voids during sintering under pressure is minimized.
摘要翻译： 通过将氧气注入到有机溶剂中，通过将氧气注入到有机溶剂中来制造用于将半导体管芯的电极和基板的电极接合和/或接合半导体管芯的电极和另一半导体管芯的电极的另一金属纳米管， 在将表面涂布有分散剂的金属纳米颗粒之前或之后的氧纳米气泡或氧气泡混合到有机溶剂中。 通过将金属纳米金的微滴喷射到电极上，在半导体管芯的电极和基板的电极上形成凸起，将半导体管芯上下颠倒并重叠在基板上，然后将金属纳米颗粒 通过按压和加热电极之间的凸块，在压力下烧结凸块。 结果，在压力下烧结过程中产生的空隙被最小化。
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3.发明申请METAL NANOINK AND PROCESS FOR PRODUCING THE METAL NANOINK, AND DIE BONDING METHOD AND DIE BONDING APPARATUS USING THE METAL NANOINK 有权金属纳米结构和金属纳米结晶的制造工艺和使用金属纳米结构的DIE结合方法和DIE结合装置公开(公告)号：US20110114708A1
公开(公告)日：2011-05-19
申请号：US13055747
申请日：2009-07-08
申请人： Toru Maeda , Tetsuro Tanikawa , Akinobu Teramoto , Masaaki Oda
发明人： Toru Maeda , Tetsuro Tanikawa , Akinobu Teramoto , Masaaki Oda
CPC分类号： B22F1/0062 , B22F2999/00 , H01L21/4867 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L25/50 , H01L2224/111 , H01L2224/11318 , H01L2224/1152 , H01L2224/1329 , H01L2224/13324 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13355 , H01L2224/13364 , H01L2224/13369 , H01L2224/13399 , H01L2224/16 , H01L2224/75251 , H01L2224/75252 , H01L2224/75745 , H01L2224/75753 , H01L2224/81097 , H01L2224/81193 , H01L2224/81203 , H01L2224/8184 , H01L2225/06513 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01067 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12044 , B22F1/0018 , H01L2924/00014 , H01L2924/00
摘要： Metal nanoink (100) for bonding an electrode of a semiconductor die and an electrode of a substrate and/or bonding an electrode of a semiconductor die and an electrode of another semiconductor die by sintering under pressure is produced by injecting oxygen into an organic solvent (105) in the form of oxygen nanobubbles (125) or oxygen bubbles (121) either before or after metal nanoparticles (101) whose surfaces are coated with a dispersant (102) are mixed into the organic solvent (105). Bumps are formed on the electrode of the semiconductor die and the electrode of the substrate by ejecting microdroplets of the metal nanoink (100) onto the electrodes, the semiconductor die is turned upside down and overlapped in alignment over the substrate, and then, the metal nanoparticles of the bumps are sintered under pressure by pressing and heating the bumps between the electrodes. As a result, generation of voids during sintering under pressure is minimized.
摘要翻译： 通过将氧气注入到有机溶剂中来制造用于将半导体管芯的电极和基板的电极接合和/或接合半导体管芯的电极和另一个半导体管芯的电极的金属纳米管（100） 在其表面涂布有分散剂（102）的金属纳米颗粒（101）之前或之后，将氧纳米气泡（125）或氧气（121）的形式混合到有机溶剂（105）中。 通过将金属纳米线（100）的微滴喷射到电极上，在半导体管芯的电极和基板的电极上形成凸起，将半导体管芯上下颠倒并重叠在衬底上，然后将金属 通过按压和加热电极之间的凸块，在凸起的纳米颗粒被烧结。 结果，在压力下烧结过程中产生的空隙被最小化。
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