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    Lead-chalcogenide superlattice structures
    1.
    发明授权
    Lead-chalcogenide superlattice structures 失效
    铅硫族化物超晶格结构

    公开(公告)号：US6060657A

    公开(公告)日：2000-05-09

    申请号：US104271

    申请日：1998-06-24

    申请人： Theodore C. Harman

    发明人： Theodore C. Harman

    IPC分类号： H01L35/16 ,  H01L35/20 ,  H01L35/22 ,  H01L35/14

    CPC分类号： H01L35/16 ,  H01L35/20 ,  H01L35/22 ,  Y10T428/31678

    摘要： A superlattice structure having a relatively high thermoelectric figure of merit and suitable for usage in power generation systems, and in heating and/or cooling applications is described. The superlattice structure includes a first plurality of layers formed from material D.sub.z J.sub.1-z, a second plurality of layers formed from material L.sub.x M.sub.1-x D.sub.z J.sub.1-z and a third plurality of layers formed from material L.sub.x M.sub.1-x D.sub.z J.sub.1-z wherein D is a non-metal chalcogen, and wherein J is a non-metal chalcogen, and wherein L is a group IV metal selected from the group of Pb, Sn, and Ge, and wherein M is a Group IV metal selected from the group of Pb, Sn, and Ge, and wherein D is not the same as J, and wherein L is not the same as M, and wherein 0.ltoreq.x.ltoreq.1 and 0.ltoreq.z.ltoreq.1.

    摘要翻译： 描述了具有相对较高的热电品质因数并适用于发电系统以及在加热和/或冷却应用中的超晶格结构。 超晶格结构包括由材料DzJ1-z形成的第一多个层，由材料LxM1-xDzJ1-z形成的第二多个层和由材料LxM1-xDzJ1-z形成的第三多个层，其中D是非金属 硫族元素，其中J是非金属硫属元素，其中L是选自Pb，Sn和Ge中的IV族金属，并且其中M是选自Pb，Sn和 Ge，并且其中D与J不同，并且其中L与M不同，且其中0≤x≤1且0≤z≤1。

    Process for making mercury cadmium telluride
    2.
    发明授权
    Process for making mercury cadmium telluride 失效
    制造碲化汞镉的工艺

    公开(公告)号：US4642142A

    公开(公告)日：1987-02-10

    申请号：US770821

    申请日：1985-08-28

    申请人： Theodore C. Harman

    发明人： Theodore C. Harman

    IPC分类号： C30B19/04 ,  H01L21/368

    CPC分类号： H01L21/02562 ,  C30B19/04 ,  C30B29/48 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S117/906 ,  Y10S148/064

    摘要： Mercury cadmium telluride (Hg.sub.1-x Cd.sub.x Te) is formed from an atmosphere of mercury vapor maintained at a temperature of within about 1.degree. C. of a desired temperature which contacts a liquid cadmium-tellurium solution with or without mercury maintained at a temperature within about 1.degree. C. of a desired temperature. The resultant mercury-cadmium-tellurium solution then is cooled to solidification.

    摘要翻译： 汞镉碲（Hg1-xCdxTe）由保持在约1℃温度的汞蒸汽气氛形成，所述温度在与保持在约1℃的温度下有或没有汞的液体镉 - 碲溶液接触的期望温度 ℃，所需温度。 然后将所得的汞 - 镉 - 碲溶液冷却至凝固。

    Superlattice structures particularly suitable for use as thermoelectric materials
    5.
    发明授权
    Superlattice structures particularly suitable for use as thermoelectric materials 失效
    特别适用于热电材料的超晶格结构

    公开(公告)号：US5900071A

    公开(公告)日：1999-05-04

    申请号：US926190

    申请日：1997-09-08

    申请人： Theodore C. Harman

    发明人： Theodore C. Harman

    IPC分类号： H01L35/16 ,  H01L35/12

    CPC分类号： H01L35/16

    摘要： A superlattice structure comprising alternating layers of material such as (PbEuTeSe).sub.m and (BiSbn).sub.n where m and n are the number of PbEuTeSe and BiSb monolayers per superlattice period. For one superlattice structure the respective quantum barrier layers may be formed from electrical insulating material and the respective quantum well layers may be formed from semimetal material. For some applications superlattice structures with 10,000 or more periods may be grown. For example, the superlattice structure may comprise alternating layers of (Pb.sub.1-y Eu.sub.y Te.sub.1-z Se.sub.z).sub.m and (Bi.sub.x Sb.sub.1-x).sub.n. According to one embodiment, the superlattice structure may comprise a plurality of layers comprising m layers of (Pb.sub.1-y Eu.sub.y Te.sub.1-z Se.sub.z).sub.m and n layers of Bi.sub.0.9 Sb.sub.0.1, where m and n are preferably between 2 and 20, grown on a BaF.sub.2 substrate with a buffer layer of PbTe separating the substrate and the superlattice structure. For other applications the superlattice structure may be formed from alternating layers of (Pb.sub.1-y Eu.sub.y Te.sub.1-z Se.sub.z).sub.m (quantum barrier layers) and (Pb.sub.1-x Sn.sub.x Te.sub.1-y Se.sub.y).sub.n (quantum well layers)

    摘要翻译： 超晶格结构包括诸如（PbEuTeSe）m和（BiSbn）n的材料的交替层，其中m和n是每超晶格周期的PbEuTeSe和BiSb单层的数量。 对于一个超晶格结构，各个量子势垒层可以由电绝缘材料形成，并且相应的量子阱层可以由半金属材料形成。 对于一些应用，可以生长具有10,000个或更多个周期的超晶格结构。 例如，超晶格结构可以包括（Pb1-yEyyTe1-zSez）m和（BixSb1-x）n的交替层。 根据一个实施例，超晶格结构可以包括包含m层（Pb1-yEuyTe1-zSez）m和n层Bi0.9Sb0.1的多层，其中m和n优选在2和20之间，在 具有PbTe缓冲层的BaF 2衬底分离衬底和超晶格结构。 对于其他应用，超晶格结构可以由（Pb1-yEuyTe1-zSez）m（量子势垒层）和（Pb1-xSnxTe1-ySey）n（量子阱层）的交替层形成，

    Thermoelectric device test structure
    6.
    发明授权
    Thermoelectric device test structure 失效
    热电器件测试结构

    公开(公告)号：US06856136B2

    公开(公告)日：2005-02-15

    申请号：US10152754

    申请日：2002-05-22

    申请人： Theodore C. Harman

    发明人： Theodore C. Harman

    IPC分类号： G01R1/04 ,  G01N25/00 ,  G01R31/02 ,  H01L35/04

    CPC分类号： B82Y10/00 ,  G01R1/0408

    摘要： A test structure for testing a thick film thermoelectric device is presented. The test structure is able to test the thermoelectric device in the device's three modes of operation, namely as a cooling device, as a heat pump, and as a power generator. The test structure includes a pair of current electrode blocks for supporting and supplying power from a power supply to the thick film thermoelectric device being tested. Thermocouples are attached to different portions of the thick film thermoelectric device to indicate the temperature change across the device as it is being tested. Additionally, a heat source is provided when the device is being tested in an electrical generation mode. The test structure is able to compensate for the expansion and contraction of the thick film thermoelectric device during the testing. By way of the disclosed test structure, the thick film thermoelectric devices can be tested and characterized.

    摘要翻译： 提出了一种用于测试厚膜热电装置的测试结构。 该测试结构能够在设备的三种工作模式中测试热电装置，即作为冷却装置，作为热泵，以及作为发电机。 该测试结构包括一对电流电极块，用于从被测试的厚膜热电装置中的电源供给电源。 热电偶连接到厚膜热电装置的不同部分，以指示器件在被测试时的温度变化。 另外，当在发电模式下测试装置时，提供热源。 测试结构能够在测试期间补偿厚膜热电装置的膨胀和收缩。 通过所公开的测试结构，可以测试和表征厚膜热电装置。