Abstract:
A method for producing an electronic component may include: applying an electrode growth layer on or above a layer structure by means of an atomic layer deposition method; and applying an electrode on the electrode growth layer, wherein the electrode growth layer is applied with a layer thickness in a range of approximately 1.5 nm to approximately 28 nm.
Abstract:
A thin-layer encapsulation (1) for an optoelectronic component. The thin-layer encapsulation (1) comprises a sequence of layers (2) that comprises the following layers: a first ALD layer (3) deposited by means of atomic layer deposition, and a second ALD layer (4) deposited by means of atomic layer deposition. A method is disclosed for producing the thin-layer encapsulation and an optoelectronic component is disclosed having such a thin-layer encapsulation.
Abstract:
An electronic component (100), which comprises a substrate (1), at least one first electrode (3) arranged on the substrate (3) and a growth layer (7) on the side of the electrode (3) remote from the substrate (7), wherein the electrode (7) arranged on the growth layer (3) comprises a metal layer (9) with a thickness of less than or equal to 30 nm and the growth layer (7) has a thickness which is less than or equal to 10 nm. An electrical contact is also disclosed.
Abstract:
An electronic component (100), which comprises a substrate (1), at least one first electrode (3) arranged on the substrate (3) and a growth layer (7) on the side of the electrode (3) remote from the substrate (7), wherein the electrode (7) arranged on the growth layer (3) comprises a metal layer (9) with a thickness of less than or equal to 30 nm and the growth layer (7) has a thickness which is less than or equal to 10 nm. An electrical contact is also disclosed.
Abstract:
A thin-layer encapsulation (1) for an optoelectronic component. The thin-layer encapsulation (1) comprises a sequence of layers (2) that comprises the following layers: a first ALD layer (3) deposited by means of atomic layer deposition, and a second ALD layer (4) deposited by means of atomic layer deposition. A method is disclosed for producing the thin-layer encapsulation and an optoelectronic component is disclosed having such a thin-layer encapsulation.
Abstract:
An encapsulation structure for an optoelectronic component, may include: a thin-film encapsulation for protecting the optoelectronic component against chemical impurities; an adhesive layer formed on the thin-film encapsulation; and a cover layer formed on the adhesive layer and serving for protecting the thin-film encapsulation and/or the optoelectronic component against mechanical damage, wherein the adhesive layer is formed such that particle impurities situated at the surface of the thin-film encapsulation are at least partly enclosed by the adhesive layer.
Abstract:
An optoelectronic component may include: at least one layer of the optoelectronic component; at least one adhesive on the layer of the optoelectronic component; and a cover on the at least one adhesive; wherein the at least one adhesive is cured only in a partial region above at least one of a substrate and the layer.
Abstract:
An organic light-emitting diode (1), comprising a layer stack (2) for emitting electromagnetic radiation (6). An electrically conductive first connection layer (4) is arranged on a first surface of the layer stack (2) and an electrically conductive second connection layer (5) at least predominantly transparent to a characteristic wavelength of the emittable electromagnetic radiation (6) is arranged on a second surface of the layer stack (2). The organic light-emitting diode is characterized by a conductive contact structure (7) arranged on the opposite side of the first connection layer (4) from the layer stack, which contact structure is connected electrically to the second connection layer (5) in the region of a plurality of openings (12) in the first connection layer (4). Also disclosed is a contact arrangement (15) for a two-dimensional, optically active element and to a method of producing organic light-emitting diodes (1).
Abstract:
An optoelectronic component may include: at least one layer of the optoelectronic component; at least one adhesive on the layer of the optoelectronic component; and a cover on the at least one adhesive; wherein the at least one adhesive is cured only in a partial region above at least one of a substrate and the layer.
Abstract:
A radiation-emitting arrangement comprises, in particular, a carrier element (1) having an at least partly non-transparent main surface (10) and arranged on the carrier element (1), an organic radiation-emitting component (2) having an organic layer sequence (23) with an active region between an at least partly transparent first electrode (21) and an at least partly transparent second electrode (22). The active region (29) is suitable for generating electromagnetic radiation (91, 93) in a switched-on operating state. The radiation-emitting arrangement has a radiation exit area (3) for emitting the electromagnetic radiation (92, 93) on that side of the organic radiation-emitting component (2) which faces away from the carrier element. (1) The at least partly non-transparent main surface (10) of the carrier element (1) is perceptible by an external observer through the radiation exit area (3) in a switched-off operating state of the organic radiation-emitting component (2).