公开(公告)号：US4537759A

公开(公告)日：1985-08-27

申请号：US507768

申请日：1983-06-27

申请人： Joe M. Walker ,  Thomas M. Potts

发明人： Joe M. Walker ,  Thomas M. Potts

IPC分类号： B01D53/02 ,  C01B33/029 ,  C01B33/04 ,  C01B33/02

CPC分类号： B01D53/025 ,  C01B33/029 ,  C01B33/046

摘要： Elemental silicon is produced by a process and apparatus wherein relatively impure silane (SiH.sub.4) is purified in the gaseous state, while mixed with an inert carrier gas, to a content of electronically active impurities which is no higher than that of "electronic grade" silicon. The silane so purified is then thermally decomposed to form elemental silicon of electronic grade purity, without need for further purification of the elemental silicon itself. The silane purification is carried out by injecting the impure silane gas as a series of timed, spaced pulses into a carrier gas stream which transports the silane pulses to a gas chromatographic column, through which the pulses flow in sequence. The column has a porous polymer or a molecular sieve packing which is specially preconditioned to achieve high resolution separation of the components of the feed. The components of each pulse are differentially retarded by this packing so that they move through the column at different rates, as a result of which they exit at different but precisely spaced time intervals in relation to pulse input time. The emergence from the column of the silane "peak" or portion of the respective pulse is detected individually or is timed from the pulse input. When detected or timed, the eluent silane peak and admixed carrier gas are valved to a receiver separately from the other components, which exit before and after that peak. The silane gas fraction of the peak is then thermally decomposed, to form elemental silicon which is of electronic purity, or it may be collected and pressurized before thermal decomposition. The admixed carrier gas is not decomposed, remains a gas, and thereby is separated from the silicon. Depending on the extent to which the gas purification is carried, the product silicon may have a measured resistivity of about 1500 ohms cm or better, and can be used in fabrication of solar cells or semiconductor device without further purification.

公开(公告)号：US4772296A

公开(公告)日：1988-09-20

申请号：US49590

申请日：1987-05-12

申请人： Thomas M. Potts

发明人： Thomas M. Potts

IPC分类号： C01B6/34 ,  C01B9/00 ,  C01B25/06 ,  C01B25/10 ,  C01B35/06 ,  C01G1/06 ,  C01G15/00 ,  C01G28/00 ,  C07F5/00 ,  C07F5/06 ,  C07F9/50 ,  C07F9/72 ,  C07F9/94 ,  C30B25/02 ,  C30B25/14 ,  C30B29/40 ,  G01N30/46 ,  B01D15/08

CPC分类号： C30B25/14 ,  C01B25/06 ,  C01B25/10 ,  C01B35/061 ,  C01B6/34 ,  C01B9/00 ,  C01G1/06 ,  C07F5/00 ,  C07F5/063 ,  C07F9/723 ,  C07F9/94 ,  C23C16/45561 ,  G01N30/461

摘要： Thermally decomposable Group IIIa compounds are purified by conveying the relatively impure material through a prescrubber module, then heating the scrubbed Group IIIa compound and conveying same through a preconditioned gas chromatographic column packed with a porous polymeric material. After isolation, the purified material is cooled, demisted amd collected. Thermally decomposable Group Va compounds are purified by conveying the heated relatively impure material through a preconditioned gas chromatographic column packed with a porous polymeric material. After isolation, the purified material is cooled and collected. Epitaxial semiconductor films of purified thermally decomposable Group IIIa and Group Va compounds with added dopant are prepared by diluting the film components with inert carrier gas to predetermined concentration levels, thoroughly mixing the components, then depositing a crystal layer prepared from the mixed components onto a substrate by thermally decomposing the mixed components in a reactor.

摘要翻译： 通过将相对不纯的材料输送通过预浸料组件，然后加热洗涤的IIIa族化合物并将其输送通过填充有多孔聚合物材料的预处理气相色谱柱来纯化热分解组IIIa化合物。 分离后，将纯化的材料冷却，收集分散体。 通过将加热的相对不纯的材料输送通过填充有多孔聚合物材料的预处理气相色谱柱来纯化热分解的Va族化合物。 分离后，将纯化的物质冷却并收集。 通过用惰性载气将膜组分稀释到预定浓度水平，充分混合组分，然后将由混合组分制备的晶体层沉积到衬底上制备具有添加掺杂剂的纯化的可热分解组IIIa和组Va化合物的外延半导体膜 通过在反应器中热分解混合的组分。

公开(公告)号：US5840953A

公开(公告)日：1998-11-24

申请号：US558682

申请日：1995-11-16

申请人： Thomas M. Potts

发明人： Thomas M. Potts

IPC分类号： B01D53/04 ,  C07F7/04

CPC分类号： C07F7/045

摘要： Tetraethoxysilane is purified by passing impure material through a gas chromatographic separating column at a temperature below the boiling point of the pure tetraethoxysilane. Separation of pure material from impurities occurs on the column, and the pure material is thereafter cooled and collected in a receiver. The purified tetraethoxysilane has 99.999999% purity based on metals content.

摘要翻译： 通过不纯物质在低于纯四乙氧基硅烷的沸点的温度下通过气相色谱分离柱纯化四乙氧基硅烷。 在柱上发生纯物质与杂质的分离，然后将纯物质冷却并收集在接收器中。 纯化的四乙氧基硅烷基于金属含量具有99.999999％的纯度。

公开(公告)号：US4905267A

公开(公告)日：1990-02-27

申请号：US187722

申请日：1988-04-29

申请人： Daniel W. Miller ,  Thomas M. Potts ,  Rudolf E. Prechter ,  Benjamin A. Prichard, Jr. ,  James M. Slater

发明人： Daniel W. Miller ,  Thomas M. Potts ,  Rudolf E. Prechter ,  Benjamin A. Prichard, Jr. ,  James M. Slater

IPC分类号： A61B5/107 ,  A61B6/04 ,  A61B6/08 ,  A61N5/10

CPC分类号： A61B6/0421 ,  A61B5/1078 ,  A61B6/08 ,  A61N5/1049 ,  A61N2005/1087 ,  A61N2005/1097

摘要： A whole-body patient positioning and repositioning support for fixedly securing a patient in an original position during radiation treatment and for repositioning the patient to the same original position for subsequent radiation treatments. The support includes a foamed-in-place mold within a disposable plastic shell carrying a grid of radio-opaque members for generating a patient registration grid on X-rays for use in the evaluation and adjusting of the position of the patient to the original position using a sheet or straps between the patient and the mold.

摘要翻译： 全身患者定位和重新定位支撑，用于在放射治疗期间将患者固定地固定在原始位置，并将患者重新定位到相同的原始位置以用于随后的放射治疗。 支撑体包括在一次性塑料外壳内的发泡就地模具，其携带不透射线构件的格栅，用于在X射线上产生患者对准网格，用于评估和调整患者的位置至原始位置 在患者和模具之间使用片材或带子。