Method for fabricating a MESFET
    1.
    发明申请
    Method for fabricating a MESFET 失效
    MESFET的制造方法

    公开(公告)号:US20070155072A1

    公开(公告)日:2007-07-05

    申请号:US11327257

    申请日:2006-01-05

    申请人: Thomas Winslow

    发明人: Thomas Winslow

    IPC分类号: H01L21/338

    摘要: A MESFET and method for fabricating a MESFET are provided. The method includes forming an n-type channel portion in a substrate and forming a p-type channel portion in the substrate. A boundary of the n-type channel portion and a boundary of the p-type channel portion define an intrinsic region in the substrate.

    摘要翻译: 提供了一种用于制造MESFET的MESFET和方法。 该方法包括在衬底中形成n型沟道部分并在衬底中形成p型沟道部分。 n型沟道部分的边界和p型沟道部分的边界限定衬底中的本征区域。

    Dual field plate MESFET
    2.
    发明申请
    Dual field plate MESFET 审中-公开
    双场板MESFET

    公开(公告)号:US20070138515A1

    公开(公告)日:2007-06-21

    申请号:US11305943

    申请日:2005-12-19

    申请人: Thomas Winslow

    发明人: Thomas Winslow

    IPC分类号: H01L31/112

    CPC分类号: H01L29/812 H01L29/404

    摘要: A dual field plate MESFET and method of forming a dual field plate MESFET are provided. The MESFET includes a gate electrode and a drain electrode, with the gate electrode and drain electrode formed on a substrate. The MESFET further includes a gate side field plate at the gate electrode and a drain side field plate in proximity to the drain electrode and extending over a burnout improvement region in the substrate.

    摘要翻译: 提供双场板MESFET和形成双场板MESFET的方法。 MESFET包括栅电极和漏电极,栅电极和漏电极形成在衬底上。 MESFET还包括在栅电极处的栅极侧场板和靠近漏电极的漏极侧场板,并延伸到衬底中的烧尽改进区域。