摘要:
A MESFET and method for fabricating a MESFET are provided. The method includes forming an n-type channel portion in a substrate and forming a p-type channel portion in the substrate. A boundary of the n-type channel portion and a boundary of the p-type channel portion define an intrinsic region in the substrate.
摘要:
A dual field plate MESFET and method of forming a dual field plate MESFET are provided. The MESFET includes a gate electrode and a drain electrode, with the gate electrode and drain electrode formed on a substrate. The MESFET further includes a gate side field plate at the gate electrode and a drain side field plate in proximity to the drain electrode and extending over a burnout improvement region in the substrate.
摘要:
An apparatus and method for transmitting signal, the apparatus comprising a front end telecommunications module including a power amplifier, a matching circuit coupled to the power amplifier, and a filter coupled to the matching circuit, such that a signal received by the power amplifier is transmitted to the filter through the matching circuit. The telecommunications module provides quad-band capability in a compact design.