公开(公告)号：US20130119149A1

公开(公告)日：2013-05-16

申请号：US13297021

申请日：2011-11-15

Applicant: Kevin Thomas Brown ,  Cesar Javier Trejo ,  Tim O'Brien ,  David Olvera ,  Kenneth Lee Krauskopf

Inventor： Kevin Thomas Brown ,  Cesar Javier Trejo ,  Tim O'Brien ,  David Olvera ,  Kenneth Lee Krauskopf

IPC: B05B1/00 ,  E03B9/00

CPC classification number: E03B9/20 ,  B05B15/70 ,  B05B17/08

Abstract: A nozzle positioning assembly includes a first support shaft, a second support shaft, a first position adjustment assembly, a second position adjustment assembly, and a hub. The first and second support shafts have respective bodies with a center aperture, a spherical first end, and a second end opposite the spherical first end. The first and second position adjustment assembly include first and second link mounting ears positioned circumferentially from one another. The first position adjustment assembly is adapted to be affixed to the second end of the first support shaft and the second position adjustment assembly is adapted to be affixed to the second end of the second support shaft. The hub has a first end configured to receive and rotatably retain the spherical first end of the first support shaft, and a second end configured to receive and rotatably retain the spherical first end of the second support shaft.

Abstract translation: 喷嘴定位组件包括第一支撑轴，第二支撑轴，第一位置调整组件，第二位置调整组件和轮毂。 第一和第二支撑轴具有具有中心孔，球形第一端和与球形第一端相对的第二端的相应主体。 第一和第二位置调整组件包括彼此周向定位的第一和第二连杆安装耳。 第一位置调整组件适于固定到第一支撑轴的第二端，并且第二位置调整组件适于固定到第二支撑轴的第二端。 轮毂具有构造成接收和可旋转地保持第一支撑轴的球形第一端的第一端，以及构造成容纳并可旋转地保持第二支撑轴的球形第一端的第二端。

公开(公告)号：US09315974B2

公开(公告)日：2016-04-19

申请号：US13297021

申请日：2011-11-15

Applicant: Kevin Thomas Brown ,  Cesar Javier Trejo ,  Tim O'Brien ,  David Olvera ,  Kenneth Lee Krauskopf

Inventor： Kevin Thomas Brown ,  Cesar Javier Trejo ,  Tim O'Brien ,  David Olvera ,  Kenneth Lee Krauskopf

IPC: B05B15/08 ,  E03B9/20 ,  B05B15/10 ,  B05B17/08

CPC classification number: E03B9/20 ,  B05B15/70 ,  B05B17/08

Abstract: A nozzle positioning assembly includes a first support shaft, a second support shaft, a first position adjustment assembly, a second position adjustment assembly, and a hub. The first and second support shafts have respective bodies with a center aperture, a spherical first end, and a second end opposite the spherical first end. The first and second position adjustment assembly include first and second link mounting ears positioned circumferentially from one another. The first position adjustment assembly is adapted to be affixed to the second end of the first support shaft and the second position adjustment assembly is adapted to be affixed to the second end of the second support shaft. The hub has a first end configured to receive and rotatably retain the spherical first end of the first support shaft, and a second end configured to receive and rotatably retain the spherical first end of the second support shaft.

Abstract translation: 喷嘴定位组件包括第一支撑轴，第二支撑轴，第一位置调整组件，第二位置调整组件和轮毂。 第一和第二支撑轴具有具有中心孔，球形第一端和与球形第一端相对的第二端的相应主体。 第一和第二位置调整组件包括彼此周向定位的第一和第二连杆安装耳。 第一位置调整组件适于固定到第一支撑轴的第二端，并且第二位置调整组件适于固定到第二支撑轴的第二端。 轮毂具有构造成接收和可旋转地保持第一支撑轴的球形第一端的第一端，以及构造成容纳并可旋转地保持第二支撑轴的球形第一端的第二端。

公开(公告)号：US5750012A

公开(公告)日：1998-05-12

申请号：US627262

申请日：1996-04-04

Applicant: P. J. Ireland ,  Howard Rhodes ,  Sujit Sharan ,  Sukesh Sandhu ,  Tim O'Brien ,  Tim Johnson

Inventor： P. J. Ireland ,  Howard Rhodes ,  Sujit Sharan ,  Sukesh Sandhu ,  Tim O'Brien ,  Tim Johnson

IPC: C23C14/04 ,  C23C14/35 ,  H01L21/762 ,  H01L21/768 ,  C23C14/34

CPC classification number: C23C14/35 ,  C23C14/046 ,  H01L21/762 ,  H01L21/76877

Abstract: An improved sputtering process increases the perpendicularity of the sputtered flux to the target surface by bombarding the target with both low and high mass ions, with low mass ions predominating, packing the target with both low and high mass implanted ions, and causing target atoms ejected as a result of high mass incident ions to have a higher probability of perpendicular or near perpendicular ejection. An alternative improved sputtering process bombards the target with both low and high mass ions, with high mass ions predominating, resulting in a higher sputter rate than achievable with either the high or low mass species alone. Including in either process as the high or the low mass species a species having a lower ionization energy than a standard species allows a reduced pressure plasma, resulting in less scattering of the sputtered flux. A low ionization energy species may also be employed to assist in striking a plasma before sputtering by a single species during deposition.

公开(公告)号：US11141076B1

公开(公告)日：2021-10-12

申请号：US15435260

申请日：2017-02-16

Applicant: Thomas Eugene Diller ,  Ali Reza Roghanizad ,  Brian Vick ,  Tim O'Brien

Inventor： Thomas Eugene Diller ,  Ali Reza Roghanizad ,  Brian Vick ,  Tim O'Brien

IPC: A61B5/26 ,  A61B5/026 ,  A61B5/0205 ,  A61B5/01

Abstract: A sensor system for measuring blood perfusion, blood temperature, and thermal resistance using heat transfer and temperature measurements. The system uses a heat flux sensor, temperature sensor and electric resistance heater with a data analysis device using measurements before, during and after the thermal event provided by the heater.

公开(公告)号：US06398923B1

公开(公告)日：2002-06-04

申请号：US09609441

申请日：2000-07-03

Applicant: P. J. Ireland ,  Howard Rhodes ,  Sujit Sharan ,  Sukesh Sandhu ,  Tim O'Brien ,  Tim Johnson

Inventor： P. J. Ireland ,  Howard Rhodes ,  Sujit Sharan ,  Sukesh Sandhu ,  Tim O'Brien ,  Tim Johnson

IPC: C23C1434

CPC classification number: C23C14/35 ,  C23C14/046 ,  H01L21/762 ,  H01L21/76877

Abstract: An improved sputtering process increases the perpendicularity of the sputtered flux to the target surface by bombarding the target with both low and high mass ions, with low mass ions predominating, packing the target with both low and high mass implanted ions, and causing target atoms ejected as a result of high mass incident ions to have a higher probability of perpendicular or near perpendicular ejection. An alternative improved sputtering process bombards the target with both low and high mass ions, with high mass ions predominating, resulting in a higher sputter rate than achievable with either the high or low mass species alone. Including in either process as the high or the low mass species a species having a lower ionization energy than a standard species allows a reduced pressure plasma, resulting in less scattering of the sputtered flux. A low ionization energy species may also be employed to assist in striking a plasma before sputtering by a single species during deposition.

Abstract translation: 改进的溅射工艺通过以低质量离子和高质量离子轰击靶，通过以低质量离子为主来增加溅射通量对目标表面的垂直度，用低质量和高质量注入离子填充目标，并引起目标原子喷出 作为高质量入射离子的结果具有更高的垂直或近似垂直喷射的概率。 一种替代的改进的溅射工艺用低和高质量离子轰击靶，以高质量离子为主，导致比单独使用高质量或低质量物质可实现的更高的溅射速率。 在任一过程中，作为高质量或低质量物质，具有比标准物质更低的电离能的物质允许减压等离子体，导致溅射通量的较少散射。 也可以使用低电离能种来在沉积期间通过单一物质在溅射之前帮助击打等离子体。

公开(公告)号：US6083358A

公开(公告)日：2000-07-04

申请号：US53354

申请日：1998-04-01

Applicant: P. J. Ireland ,  Howard Rhodes ,  Sujit Sharan ,  Sukesh Sandhu ,  Tim O'Brien ,  Tim Johnson

Inventor： P. J. Ireland ,  Howard Rhodes ,  Sujit Sharan ,  Sukesh Sandhu ,  Tim O'Brien ,  Tim Johnson

IPC: C23C14/04 ,  C23C14/35 ,  H01L21/762 ,  H01L21/768 ,  C23C14/34

CPC classification number: C23C14/35 ,  C23C14/046 ,  H01L21/762 ,  H01L21/76877

Abstract: An improved sputtering process increases the perpendicularity of the sputtered flux to the target surface by bombarding the target with both low and high mass ions, with low mass ions predominating, packing the target with both low and high mass implanted ions, and causing target atoms ejected as a result of high mass incident ions to have a higher probability of perpendicular or near perpendicular ejection. An alternative improved sputtering process bombards the target with both low and high mass ions, with high mass ions predominating, resulting in a higher sputter rate than achievable with either the high or low mass species alone. Including in either process as the high or the low mass species a species having a lower ionization energy than a standard species allows a reduced pressure plasma, resulting in less scattering of the sputtered flux. A low ionization energy species may also be employed to assist in striking a plasma before sputtering by a single species during deposition.

Abstract translation: 改进的溅射工艺通过以低质量离子和高质量离子轰击靶，通过以低质量离子为主来增加溅射通量对目标表面的垂直度，用低质量和高质量注入离子填充目标，并引起目标原子喷出 作为高质量入射离子的结果具有更高的垂直或近似垂直喷射的概率。 一种替代的改进的溅射工艺用低和高质量离子轰击靶，以高质量离子为主，导致比单独使用高质量或低质量物质可实现的更高的溅射速率。 在任一过程中，作为高质量或低质量物质，具有比标准物质更低的电离能的物质允许减压等离子体，导致溅射通量的较少散射。 也可以使用低电离能种来在沉积期间通过单一物质在溅射之前帮助击打等离子体。