LIGHT-EMITTING DEVICE
    1.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20050285136A1

    公开(公告)日:2005-12-29

    申请号:US11160354

    申请日:2005-06-21

    IPC分类号: H01L31/00 H01L33/22 H01L33/00

    CPC分类号: H01L33/22

    摘要: A light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the nitride light-emitting layer, and a first transparent conductive oxide layer formed on the second nitride semiconductor stack. The second nitride semiconductor stack includes a plurality of hexagonal-pyramid cavities formed in an upper surface of the second nitride semiconductor stack. The plurality of hexagonal-pyramid cavities of the second nitride semiconductor stack are filled with the first transparent conductive oxide layer, and a low-resistance ohmic contact is generated at the inner surfaces of the plurality of hexagonal-pyramid cavities so as to decrease the operation voltage and improve light-emitting efficiency of the light-emitting device.

    摘要翻译: 发光装置包括基板,形成在基板上的第一氮化物半导体堆叠,形成在第一氮化物半导体堆叠上的氮化物发光层,形成在氮化物发光层上的第二氮化物半导体堆叠,以及第一 透明导电氧化物层形成在第二氮化物半导体堆叠上。 第二氮化物半导体堆叠包括形成在第二氮化物半导体堆叠的上表面中的多个六边形棱锥空腔。 第二氮化物半导体叠层的多个六角形金字塔腔被第一透明导电氧化物层填充,并且在多个六角锥形空腔的内表面处产生低电阻欧姆接触,以减少操作 电压并提高发光装置的发光效率。

    Light-emitting device
    2.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号:US07705344B2

    公开(公告)日:2010-04-27

    申请号:US12078899

    申请日:2008-04-08

    IPC分类号: H01L33/00

    CPC分类号: H01L33/025 H01L33/325

    摘要: A light-emitting device includes a substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; wherein the active layer is a multi-quantum-well (MQW) active layer with a predetermined n-type doping profile. More specifically, the MQW active layer is doped with n-type dopants in the region near the p-type semiconductor layer and the n-type semiconductor layer, and the central region is not doped with the n-type dopants.

    摘要翻译: 发光器件包括衬底,n型半导体层,有源层和p型半导体层; 其中所述有源层是具有预定n型掺杂分布的多量子阱(MQW)有源层。 更具体地,MQW有源层在p型半导体层和n型半导体层附近的区域中掺杂有n型掺杂剂,并且中心区域不掺杂n型掺杂剂。

    High-efficiency light-emitting element
    3.
    发明授权
    High-efficiency light-emitting element 有权
    高效发光元件

    公开(公告)号:US07355210B2

    公开(公告)日:2008-04-08

    申请号:US10906458

    申请日:2005-02-21

    IPC分类号: H01L31/12

    CPC分类号: H01L33/32 H01L33/20 H01L33/22

    摘要: A high-efficiency light-emitting element includes a substrate, a first nitride semiconductor layer formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the nitride light-emitting layer including a plurality of hexagonal-pyramid cavities on the surface of the second nitride semiconductor layer opposite to the nitride light-emitting layer.

    摘要翻译: 高效发光元件包括基板,形成在基板上的第一氮化物半导体层,形成在第一氮化物半导体层上的氮化物发光层和形成在氮化物发光层上的第二氮化物半导体层 包括在与氮化物发光层相对的第二氮化物半导体层的表面上的多个六角锥形空腔。

    Light-emitting device
    4.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号:US07385226B2

    公开(公告)日:2008-06-10

    申请号:US11160354

    申请日:2005-06-21

    IPC分类号: H01L33/00

    CPC分类号: H01L33/22

    摘要: A light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the nitride light-emitting layer, and a first transparent conductive oxide layer formed on the second nitride semiconductor stack. The second nitride semiconductor stack includes a plurality of hexagonal-pyramid cavities formed in an upper surface of the second nitride semiconductor stack. The plurality of hexagonal-pyramid cavities of the second nitride semiconductor stack are filled with the first transparent conductive oxide layer, and a low-resistance ohmic contact is generated at the inner surfaces of the plurality of hexagonal-pyramid cavities so as to decrease the operation voltage and improve light-emitting efficiency of the light-emitting device.

    摘要翻译: 发光装置包括基板,形成在基板上的第一氮化物半导体堆叠,形成在第一氮化物半导体堆叠上的氮化物发光层,形成在氮化物发光层上的第二氮化物半导体堆叠,以及第一 透明导电氧化物层形成在第二氮化物半导体堆叠上。 第二氮化物半导体堆叠包括形成在第二氮化物半导体堆叠的上表面中的多个六边形棱锥空腔。 第二氮化物半导体叠层的多个六角形金字塔腔被第一透明导电氧化物层填充,并且在多个六角锥形空腔的内表面处产生低电阻欧姆接触,以减少操作 电压并提高发光装置的发光效率。

    LIGHT-EMITTING DEVICE
    5.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20080054278A9

    公开(公告)日:2008-03-06

    申请号:US11160354

    申请日:2005-06-21

    IPC分类号: H01L33/00

    CPC分类号: H01L33/22

    摘要: A light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the nitride light-emitting layer, and a first transparent conductive oxide layer formed on the second nitride semiconductor stack. The second nitride semiconductor stack includes a plurality of hexagonal-pyramid cavities formed in an upper surface of the second nitride semiconductor stack. The plurality of hexagonal-pyramid cavities of the second nitride semiconductor stack are filled with the first transparent conductive oxide layer, and a low-resistance ohmic contact is generated at the inner surfaces of the plurality of hexagonal-pyramid cavities so as to decrease the operation voltage and improve light-emitting efficiency of the light-emitting device.

    摘要翻译: 发光装置包括基板,形成在基板上的第一氮化物半导体堆叠,形成在第一氮化物半导体堆叠上的氮化物发光层,形成在氮化物发光层上的第二氮化物半导体堆叠,以及第一 透明导电氧化物层形成在第二氮化物半导体堆叠上。 第二氮化物半导体堆叠包括形成在第二氮化物半导体堆叠的上表面中的多个六边形棱锥空腔。 第二氮化物半导体叠层的多个六角形金字塔腔被第一透明导电氧化物层填充,并且在多个六角锥形空腔的内表面处产生低电阻欧姆接触,以减少操作 电压并提高发光装置的发光效率。

    HIGH-EFFICIENCY LIGHT-EMITTING ELEMENT
    6.
    发明申请
    HIGH-EFFICIENCY LIGHT-EMITTING ELEMENT 有权
    高效发光元件

    公开(公告)号:US20050211995A1

    公开(公告)日:2005-09-29

    申请号:US10906458

    申请日:2005-02-21

    CPC分类号: H01L33/32 H01L33/20 H01L33/22

    摘要: A high-efficiency light-emitting element includes a substrate, a first nitride semiconductor layer formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the nitride light-emitting layer including a plurality of hexagonal-pyramid cavities on the surface of the second nitride semiconductor layer opposite to the nitride light-emitting layer.

    摘要翻译: 高效发光元件包括基板,形成在基板上的第一氮化物半导体层,形成在第一氮化物半导体层上的氮化物发光层和形成在氮化物发光层上的第二氮化物半导体层 包括在与氮化物发光层相对的第二氮化物半导体层的表面上的多个六角锥形空腔。

    Light-emitting device
    7.
    发明申请
    Light-emitting device 有权
    发光装置

    公开(公告)号:US20080246018A1

    公开(公告)日:2008-10-09

    申请号:US12078899

    申请日:2008-04-08

    IPC分类号: H01L33/00

    CPC分类号: H01L33/025 H01L33/325

    摘要: A light-emitting device includes a substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; wherein the active layer is a multi-quantum-well (MQW) active layer with a predetermined n-type doping profile. More specifically, the MQW active layer is doped with n-type dopants in the region near the p-type semiconductor layer and the n-type semiconductor layer, and the central region is not doped with the n-type dopants.

    摘要翻译: 发光装置包括基板,n型半导体层,有源层和p型半导体层; 其中所述有源层是具有预定n型掺杂分布的多量子阱(MQW)有源层。 更具体地,MQW有源层在p型半导体层和n型半导体层附近的区域中掺杂有n型掺杂剂,并且中心区域不掺杂n型掺杂剂。