Abstract:
A level shifter circuit configured for use between a core of a chip and input/output transistor of the chip in order to shield low voltage devices residing on the core. The level shifter circuit includes voltage tolerant native devices which have VDDCORE on their gates, and each voltage tolerant native device is cascoded with a low voltage transistor on the core.
Abstract:
A method and apparatus are provided for protecting elements of a receiver from overvoltages in a pseudo-differential signal having a true signal and a reference voltage. The method and apparatus limit the true signal to a protection voltage, which is correlated to the reference voltage, to produce a protected true signal. The protected true signal and the reference voltage are applied to inputs of the receiver.
Abstract:
A receiver circuit is provided on an integrated circuit. The receiver circuit includes first and second power supply terminals, a ground supply terminal, a resistive element coupled between the first and second power supply terminals, and a receiver biased between the second power supply terminal and the ground supply terminal. The receiver draws a bias current through the resistive element, which varies as a positive function with a voltage on the second power supply terminal. The voltage on the second power supply terminal varies as an inverse function of the bias current.
Abstract:
A process for forming a capacitive structure that includes an upper layer having a first capacitor electrode section therein. A capacitor dielectric layer is formed adjacent the upper layer. The capacitor dielectric layer covers the first capacitor electrode section. A second capacitor electrode layer is formed adjacent the capacitor dielectric layer. The second capacitor electrode layer includes a second capacitor electrode section that at least partially covers the first capacitor electrode section, and which has an edge portion that extends beyond the underlying first capacitor electrode section. The capacitor dielectric layer being disposed between the first capacitor electrode section and the second capacitor electrode section. An upper dielectric layer is formed adjacent the second capacitor electrode section. Portions of the upper dielectric layer and the second capacitor electrode section are selectively removed to form a first via cavity that extends through the upper dielectric layer and the edge portion of the second capacitor electrode section. This exposes the edge portion of the second capacitor electrode section within the first via cavity. The first via cavity is filled with a via metal, which makes electrical connection with the edge portion of the second capacitor electrode section that is exposed within the first via cavity.
Abstract:
A fault tolerant driver circuit includes a data output driver that receives an enable input and that includes a transistor formed on an isolation well. A well bias circuit provides a first well bias to the isolation well. The well bias circuit includes voltage-controlled impedances that are controlled by a voltage of the data output line, the enable input and a supply voltage. The voltage-controlled impedances connect the first well bias alternatively to: a common conductor through a first impedance when the supply voltage is ON and the enable input is ON; and a second impedance when the supply voltage is on and enable is OFF.
Abstract:
An input/output (I/O) cell including one or more driver-capable segments and one or more on-die termination (ODT) capable segments. The I/O cell may be configured as an output driver in a first mode and Thevenin equivalent termination in a second mode.
Abstract translation:输入/输出(I / O)单元包括一个或多个可驱动器段和一个或多个片上终端(ODT)能力段。 I / O单元可以被配置为处于第一模式的输出驱动器,并且在第二模式中将Ivenin等效终止。
Abstract:
An input/output (I/O) cell including one or more driver-capable segments and one or more on-die termination (ODT) capable segments. The I/O cell may be configured as an output driver in a first mode and Thevenin equivalent termination in a second mode.
Abstract translation:输入/输出(I / O)单元包括一个或多个可驱动器段和一个或多个片上终端(ODT)能力段。 I / O单元可以被配置为处于第一模式的输出驱动器,并且在第二模式中将Ivenin等效终止。
Abstract:
A method and apparatus are provided for summing DC voltages, which employ at least one native transistor device to add a first DC input voltage to a second DC input voltage to produce a sum output.
Abstract:
An input/output (I/O) cell including one or more driver-capable segments and one or more on-die termination (ODT) capable segments. The I/O cell may be configured as an output driver in a first mode and Thevenin equivalent termination in a second mode.
Abstract translation:输入/输出(I / O)单元包括一个或多个可驱动器段和一个或多个片上终端(ODT)能力段。 I / O单元可以被配置为处于第一模式的输出驱动器,并且在第二模式中将Ivenin等效终止。
Abstract:
An input/output (I/O) cell including one or more driver-capable segments and one or more on-die termination (ODT) capable segments. The I/O cell may be configured as an output driver in a first mode and Thevenin equivalent termination in a second mode.
Abstract translation:输入/输出(I / O)单元包括一个或多个可驱动器段和一个或多个片上终端(ODT)能力段。 I / O单元可以被配置为处于第一模式的输出驱动器,并且在第二模式中将Ivenin等效终止。