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    High-frequency circuit module having a duplexer disposed between specified module integrated circuits
    1.
    发明授权
    High-frequency circuit module having a duplexer disposed between specified module integrated circuits 有权
    高频电路模块具有布置在指定的模块集成电路之间的双工器

    公开(公告)号：US08536957B1

    公开(公告)日：2013-09-17

    申请号：US13593141

    申请日：2012-08-23

    申请人： Hiroshi Nakamura ,  Tomohiro Igarashi

    发明人： Hiroshi Nakamura ,  Tomohiro Igarashi

    IPC分类号： H01P5/12 ,  H01P1/213 ,  H03H9/70 ,  H03H9/72

    CPC分类号： H04L5/1461 ,  H01L23/3735 ,  H01L2224/16225 ,  H03H7/463 ,  H03H9/0547 ,  H03H9/08 ,  H04B1/0057 ,  H05K1/0207 ,  H05K1/0216 ,  H05K1/0237

    摘要： Provided is a high-frequency circuit module that has high mounting density. In a high-frequency circuit module 100, an RFIC 160 that performs transmission and reception processes for high-frequency signals, a power amplifier IC 155 that amplifies a transmission signal from the RFIC, and a duplexer 110 that separates a transmission signal outputted from the power amplifier IC 155 to an antenna and a reception signal that is inputted from the antenna to the RFIC 160 are formed on the top surface thereof. The duplexer 110 is disposed between the RFIC 160 and the power amplifier IC 155.

    摘要翻译： 提供了具有高安装密度的高频电路模块。 在高频电路模块100中，执行高频信号的发送和接收处理的RFIC 160，放大来自RFIC的发送信号的功率放大器IC 155以及分离从该RFIC输出的发送信号的双工器110 功率放大器IC 155到天线和从天线输入到RFIC 160的接收信号形成在其顶表面上。 双工器110设置在RFIC 160和功率放大器IC 155之间。

    MULTILAYER FILTER
    4.
    发明申请
    MULTILAYER FILTER 审中-公开
    多层过滤器

    公开(公告)号：US20090033439A1

    公开(公告)日：2009-02-05

    申请号：US11813776

    申请日：2006-06-13

    申请人： Tomohiro Igarashi

    发明人： Tomohiro Igarashi

    IPC分类号： H03H7/01

    CPC分类号： H03H7/0115 ,  H01F17/0013 ,  H01F27/40 ,  H01P1/20345 ,  H03H7/1758 ,  H03H2001/0085

    摘要： A multilayer filter wherein the capacitances of capacitors are reduced to reduce the size of the filter without substantially affecting the filter frequency characteristics. A predetermined filter circuit includes plural electrodes in a dielectric ceramic device body. Each of the capacitors is respectively disposed at input and output ends of the filter circuit and has one end connected to one of input/output terminals. Winding-type inductors, interposed between the input/output terminals and the one ends of the capacitors, are in the device body.

    摘要翻译： 一种多层滤波器，其中电容器的电容被减小以减小滤波器的尺寸而不会基本上影响滤波器频率特性。 预定的滤波电路包括电介质陶瓷器件主体中的多个电极。 每个电容器分别设置在滤波电路的输入端和输出端，并且其一端连接到输入/输出端之一。 插入在输入/输出端子和电容器的一端之间的绕组电感器在器件本体中。

    Method for fabricating a bipolar transistor having self-aligned emitter and base
    6.
    发明授权
    Method for fabricating a bipolar transistor having self-aligned emitter and base 失效
    用于制造具有自对准发射极和基极的双极晶体管的方法

    公开(公告)号：US06686251B2

    公开(公告)日：2004-02-03

    申请号：US10227414

    申请日：2002-08-26

    申请人： Tomohiro Igarashi

    发明人： Tomohiro Igarashi

    IPC分类号： H01L21331

    CPC分类号： H01L29/66272 ,  H01L29/0804 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/7322

    摘要： A method for forming a self-aligned bipolar transistor includes the steps of combination etching a silicon substrate in an opening to form a concave surface on the silicon substrate, and forming an intrinsic base and an associated emitter on the concave surface. The combination etching includes an isotropic etching and subsequent wet etching. The concave surface increases the distance between the external base for the intrinsic base and the emitter to thereby increase the emitter-base breakdown voltage.

    摘要翻译： 用于形成自对准双极晶体管的方法包括以下步骤：在开口中组合蚀刻硅衬底以在硅衬底上形成凹面，并在凹面上形成本征基极和相关发射极。 组合蚀刻包括各向同性蚀刻和随后的湿蚀刻。 凹面增加了本征基极的外部基极与发射极之间的距离，从而增加发射极 - 基极击穿电压。