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公开(公告)号:US20090297755A1
公开(公告)日:2009-12-03
申请号:US12471855
申请日:2009-05-26
申请人: Sakae KOYATA , Tomohiro HASHII , Yasunori YAMADA , Satoshi YUKIWAKI , Shinji SAKAMOTO , Tomoko OHMACHI
发明人: Sakae KOYATA , Tomohiro HASHII , Yasunori YAMADA , Satoshi YUKIWAKI , Shinji SAKAMOTO , Tomoko OHMACHI
IPC分类号: B32B5/00
CPC分类号: H01L21/304 , C30B29/06 , C30B33/10 , H01L21/02008 , H01L29/06 , Y10T428/21
摘要: A semiconductor wafer has a diameter of 450 mm and a thickness of at least 725 μm and no greater than 900 μm.
摘要翻译: 半导体晶片的直径为450mm,厚度至少为725μm,不大于900μm。
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公开(公告)号:US20090311460A1
公开(公告)日:2009-12-17
申请号:US12478860
申请日:2009-06-05
IPC分类号: B32B3/02
CPC分类号: C30B29/06 , C30B29/42 , C30B33/00 , Y10T428/21
摘要: A semiconductor wafer with high flatness is provided. The semiconductor wafer has a diameter φ of 450 mm and a thickness of at least 900 μm and no greater than 1,100 μm.
摘要翻译: 提供具有高平坦度的半导体晶片。 半导体晶片的直径φ为450mm,厚度为900μm以上且1100μm以下。
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