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公开(公告)号：US20090311460A1
公开(公告)日：2009-12-17
申请号：US12478860
申请日：2009-06-05
IPC分类号： B32B3/02
CPC分类号： C30B29/06 , C30B29/42 , C30B33/00 , Y10T428/21
摘要： A semiconductor wafer with high flatness is provided. The semiconductor wafer has a diameter φ of 450 mm and a thickness of at least 900 μm and no greater than 1,100 μm.
摘要翻译： 提供具有高平坦度的半导体晶片。 半导体晶片的直径φ为450mm，厚度为900μm以上且1100μm以下。
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公开(公告)号：US20070161247A1
公开(公告)日：2007-07-12
申请号：US11458489
申请日：2006-07-19
IPC分类号： C03C15/00 , H01L21/302
CPC分类号： H01L21/30608 , H01L21/02019 , H01L21/02087 , H01L21/67075 , H01L21/6708
摘要： Local shape collapse of a wafer end portion is suppressed to the minimum level, and a wafer front surface as well as a wafer end portion is uniformly etched while preventing an etchant from flowing to a wafer rear surface. There is provided an etching method of a single wafer which supplies an etchant onto a wafer front surface in a state where a single wafer having flattened front and rear surfaces is held, and etches the wafer front surface and a front surface side end portion by using a centrifugal force generated by horizontally rotating the wafer. According to this method, the etchant is intermittently supplied onto the front surface of the wafer in twice or more, supply of the etchant is stopped after the etchant for one process is supplied, and the etchant for the next process is supplied after the supplied etchant flows off from the end portion of the wafer.
摘要翻译： 将晶片端部的局部形状塌陷抑制到最小水平，并且在防止蚀刻剂流入晶片后表面的同时均匀地蚀刻晶片前表面以及晶片端部。 提供了在保持具有平坦的前后表面的单个晶片的状态下将蚀刻剂提供到晶片前表面的状态的单晶片的蚀刻方法，并且通过使用晶片前表面和前表面侧端部蚀刻 通过水平旋转晶片产生的离心力。 根据该方法，蚀刻剂以两次或更多次间歇地供给到晶片的前表面上，在提供一个工艺的蚀刻剂之后停止供应蚀刻剂，并且在所提供的蚀刻剂之后提供用于下一工艺的蚀刻剂 从晶片的端部流出。
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公开(公告)号：US20100021688A1
公开(公告)日：2010-01-28
申请号：US12506290
申请日：2009-07-21
IPC分类号： B32B3/00 , H01L21/306 , B24B7/20 , B24B1/00 , H01L21/322
CPC分类号： H01L21/02008 , H01L21/3221 , Y10T428/24355
摘要： A wafer manufacturing method includes after flattening both upper and lower surfaces of a wafer sliced from a single crystal ingot, processing the wafer having damage on both surfaces caused by the flattening, so as to obtain desired damage at least on the lower surface of the wafer, the desired damage having a damage depth ranging from 5 nm-10 μm; forming a polysilicon layer at least on the lower surface of the wafer while the damage on the lower surface of the wafer remains; single-wafer etching the upper surface of the wafer; and final polishing the upper surface of the wafer to have a mirrored surface, after the single-wafer etching.
摘要翻译： 晶片制造方法包括在从单晶锭切片的晶片的上表面和下表面平坦化之后，对由平坦化引起的在两个表面上的损伤进行处理，从而至少在晶片的下表面上获得所需的损伤 具有5nm-10μm的损伤深度的所需损伤; 至少在晶片的下表面上形成多晶硅层，同时晶片的下表面上的损坏保留; 单晶片蚀刻晶片的上表面; 并且在单晶片蚀刻之后，最终抛光晶片的上表面以具有镜像表面。
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公开(公告)号：US20090297426A1
公开(公告)日：2009-12-03
申请号：US12475840
申请日：2009-06-01
申请人： Takeo KATOH , Kazushige TAKAISHI
发明人： Takeo KATOH , Kazushige TAKAISHI
摘要： When a monocrystal is pulled up, an additive element such as boron is added to a molten silicon, and a pulling-up condition is such that a solid solution oxygen concentration is equal to or higher than 2×1018 atoms/cm3 and a chemical compound precipitation area of silicon and the additive element is formed.
摘要翻译： 当单晶被拉起时，将诸如硼的添加元素添加到熔融硅中，并且提拉条件使得固溶氧浓度等于或高于2×10 18原子/ cm 3，化合物沉淀区 的硅和添加元素。
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5.发明申请公开(公告)号：US20090297867A1
公开(公告)日：2009-12-03
申请号：US12476440
申请日：2009-06-02
申请人： Takeo KATOH , Kazushige TAKAISHI
发明人： Takeo KATOH , Kazushige TAKAISHI
CPC分类号： B32B37/06 , B32B37/1207 , B32B2309/02 , B32B2309/04 , B32B2457/14 , H01L21/76254 , Y10T156/10
摘要： An adhesive agent high in thixotropy is coated on the flat surface of a circular glass substrate in a uniform thickness, a silicon wafer equal in diameter is placed thereon, the adhesive agent is cured, and the silicon wafer is pasted together on the glass substrate.
摘要翻译： 将具有高触变性的粘合剂以均匀的厚度涂覆在圆形玻璃基板的平坦表面上，将直径相等的硅晶片放置在其上，使粘合剂固化，并将硅晶片粘贴在玻璃基板上。
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6.发明申请METHOD OF GRINDING SEMICONDUCTOR WAFERS AND DEVICE FOR GRINDING BOTH SURFACES OF SEMICONDUCTOR WAFERS 审中-公开研磨半导体晶片的方法和研磨半导体晶片表面的器件公开(公告)号：US20090298397A1
公开(公告)日：2009-12-03
申请号：US12470961
申请日：2009-05-22
CPC分类号： B24B37/28
摘要： A method of grinding semiconductor wafers including simultaneously grinding both surfaces of multiple semiconductor wafers being ground by rotating the multiple semiconductor wafers between a pair of upper and lower rotating surface plates in a state where the multiple wafers are held on a carrier so that centers of the multiple wafers are positioned on a circumference of a single circle, wherein a ratio of an area of a circle passing through the centers of the multiple wafers to an area of one of the multiple wafers is greater than or equal to 1.33 but less than 2.0; a rotational speed of the multiple wafers falls within a range of 5 to 80 rpm; and the grinding of the multiple wafers with the rotating surface plates are conducted with fixed abrasive grains in the presence of an alkali solution.
摘要翻译： 一种研磨半导体晶片的方法，包括同时研磨正在研磨的多个半导体晶片的两个表面的方法，所述两个半导体晶片在多个晶片被保持在载体上的状态下，通过在一对上下旋转表面板之间旋转多个半导体晶片而被研磨， 多个晶片位于单个圆周的圆周上，其中通过多个晶片的中心的圆的面积与多个晶片之一的面积的比率大于或等于1.33但小于2.0; 多个晶片的转速落在5〜80rpm的范围内; 并且利用固定的磨粒在碱性溶液的存在下用旋转的表面板研磨多个晶片。
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公开(公告)号：US20090294910A1
公开(公告)日：2009-12-03
申请号：US12476452
申请日：2009-06-02
申请人： Takeo KATOH , Kazushige TAKAISHI
发明人： Takeo KATOH , Kazushige TAKAISHI
IPC分类号： H01L23/00
CPC分类号： H01L21/02005 , H01L29/0657
摘要： A reinforcement member made with silicon carbide different from silicon is installed on the back face of a silicon wafer, thereby the silicon wafer is increased in Young's modulus and the wafer is less likely to deflect.
摘要翻译： 在硅晶片的背面安装由不同于硅的碳化硅制成的加强构件，从而硅晶片的杨氏模量增加，并且晶片不太可能偏转。
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公开(公告)号：US20090211167A1
公开(公告)日：2009-08-27
申请号：US12388823
申请日：2009-02-19
IPC分类号： C09G1/02
CPC分类号： C09G1/02
摘要： A wire saw slurry containing, in a dispersing medium, 0.01-1 wt % of a metal film forming substance or a chelating agent that forms a film over copper in the dispersing medium. Entry of copper into a wafer bulk is prevented by the metal film forming substance or the chelating agent capturing the copper leaching out from brass plating of wires.
摘要翻译： 在分散介质中含有0.01-1重量％的在分散介质中形成铜的膜的金属成膜物质或螯合剂的线锯浆料。 通过金属成膜物质或螯合剂捕获从黄铜镀层中浸出的铜来防止铜进入晶片体积。
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公开(公告)号：US20090304975A1
公开(公告)日：2009-12-10
申请号：US12478242
申请日：2009-06-04
申请人： Seiji SUGIMOTO , Kazushige TAKAISHI
发明人： Seiji SUGIMOTO , Kazushige TAKAISHI
IPC分类号： H01L21/322 , B32B3/02
CPC分类号： C30B29/06 , C30B15/02 , C30B25/02 , Y10T428/21
摘要： An epitaxial silicon wafer in which on growing an epitaxial film only on the front side of a large-sized wafer which is 450 mm or more in diameter, the wafer can be decreased in warpage to obtain a high intrinsic gettering performance and a method for producing the epitaxial silicon wafer. Intrinsic gettering functions have been imparted to a high resistant large-sized silicon wafer which is 450 mm or more in diameter and 0.1 Ω·cm or more in specific resistance by introducing nitrogen, carbon or both of them to a melt on pulling up an ingot. Thereby, after the growth of an epitaxial film, a silicon wafer is less likely to warp greatly. As a result, it is possible to decrease the warpage of an epitaxial silicon wafer and also to obtain a high intrinsic gettering performance.
摘要翻译： 一种外延硅晶片，其中仅在直径为450mm或更大的大尺寸晶片的正面上生长外延膜，晶片可以减少翘曲以获得高固有的吸气性能和生产方法 外延硅晶片。 通过将氮，碳或它们两者都引入到熔体中，在提高晶锭的同时，将特有的吸气功能赋予了直径为450mm或更大直径和0.1Ω·cm或更高的耐电阻大尺寸硅晶片 。 因此，在外延膜生长之后，硅晶片不太可能翘曲。 结果，可以减小外延硅晶片的翘曲，并且还可获得高固有的吸杂性能。
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公开(公告)号：US20090294918A1
公开(公告)日：2009-12-03
申请号：US12475769
申请日：2009-06-01
申请人： Takeo KATOH , Kazushige TAKAISHI
发明人： Takeo KATOH , Kazushige TAKAISHI
IPC分类号： H01L23/28
CPC分类号： H01L21/02005
摘要： In a state where a semiconductor wafer is not acted upon by its own weight, a shear stress on a rear surface side portion of the semiconductor wafer is higher than that on a front surface side portion of the semiconductor wafer, in a compression direction. Thereby, sag of the semiconductor wafer is reduced when the semiconductor wafer is simple-supported in a horizontal state.
摘要翻译： 在半导体晶片不通过其自重的状态下，半导体晶片的背面侧部分的压应力比压电方向的半导体晶片的表面侧部分的剪应力高。 因此，当半导体晶片在水平状态下简单支撑时，半导体晶片的下垂减小。
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