公开(公告)号：US08470672B2

公开(公告)日：2013-06-25

申请号：US13220756

申请日：2011-08-30

申请人： Takeshi Endo ,  Shinichiro Miyahara ,  Tomoo Morino ,  Masaki Konishi ,  Hirokazu Fujiwara ,  Jun Morimoto ,  Tsuyoshi Ishikawa ,  Takashi Katsuno ,  Yukihiko Watanabe

发明人： Takeshi Endo ,  Shinichiro Miyahara ,  Tomoo Morino ,  Masaki Konishi ,  Hirokazu Fujiwara ,  Jun Morimoto ,  Tsuyoshi Ishikawa ,  Takashi Katsuno ,  Yukihiko Watanabe

IPC分类号： H01L21/336 ,  H01L21/265

CPC分类号： H01L29/7813 ,  H01L21/30604 ,  H01L21/3065 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068

摘要： A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

摘要翻译： 制造半导体器件的方法包括在衬底上形成漂移层; 在漂移层上形成基层; 形成沟槽以穿透基层并到达漂移层; 将沟槽的一部分肩部角落和底角的一部分倒圆; 用有机膜覆盖沟槽的内壁; 将杂质注入基层的表面部分; 通过激活注入的杂质形成源区; 在形成源极区域之后除去有机膜，其中基板，漂移层，基极层和源极区域由碳化硅构成，并且杂质的注入和活化在 沟槽被有机膜覆盖。

公开(公告)号：US20140162443A1

公开(公告)日：2014-06-12

申请号：US14090424

申请日：2013-11-26

申请人： Masatoshi TSUJIMURA ,  Hirokazu FUJIWARA ,  Tomoo MORINO ,  Narumasa SOEJIMA

发明人： Masatoshi TSUJIMURA ,  Hirokazu FUJIWARA ,  Tomoo MORINO ,  Narumasa SOEJIMA

IPC分类号： H01L21/324 ,  H01L21/225

CPC分类号： H01L21/046 ,  H01L21/67303 ,  H01L29/1608

摘要： A method for producing a semiconductor device includes: an arranging process of arranging a plurality of silicon carbide wafers having opposed first and surfaces so that the first surface and the second surface of adjacent silicon carbide wafers face each other and are separated in parallel; and a heat treatment process of heating the arranged plurality of silicon carbide wafers so that the first surface of each silicon carbide wafer becomes higher in temperature than the second surface thereof, and, in the adjacent silicon carbide wafers, the second surface of one silicon carbide wafer becomes higher in temperature than the first surface of the other silicon carbide wafer that faces the second surface.

摘要翻译： 一种半导体器件的制造方法，其特征在于，包括：配置多个具有相对的第一面和表面的碳化硅晶片的布置处理，使得相邻碳化硅晶片的第一表面和第二表面彼此面对并且彼此平行分离; 以及加热配置的多个碳化硅晶片的热处理工序，使得碳化硅晶片的第一表面的温度比其第二表面变高，并且在相邻的碳化硅晶片中，一个碳化硅的第二表面 晶片的温度比面向第二表面的另一个碳化硅晶片的第一表面变得更高。

公开(公告)号：US20120052642A1

公开(公告)日：2012-03-01

申请号：US13220756

申请日：2011-08-30

申请人： Takeshi ENDO ,  Shinichiro MIYAHARA ,  Tomoo MORINO ,  Masaki KONISHI ,  Hirokazu FUJIWARA ,  Jun MORIMOTO ,  Tsuyoshi ISHIKAWA ,  Takashi KATSUNO ,  Yukihiko WATANABE

发明人： Takeshi ENDO ,  Shinichiro MIYAHARA ,  Tomoo MORINO ,  Masaki KONISHI ,  Hirokazu FUJIWARA ,  Jun MORIMOTO ,  Tsuyoshi ISHIKAWA ,  Takashi KATSUNO ,  Yukihiko WATANABE

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/30604 ,  H01L21/3065 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068

摘要： A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

摘要翻译： 制造半导体器件的方法包括在衬底上形成漂移层; 在漂移层上形成基层; 形成沟槽以穿透基层并到达漂移层; 将沟槽的一部分肩部角落和底角的一部分倒圆; 用有机膜覆盖沟槽的内壁; 将杂质注入基层的表面部分; 通过激活注入的杂质形成源区; 在形成源极区域之后除去有机膜，其中基板，漂移层，基极层和源极区域由碳化硅构成，并且杂质的注入和活化在 沟槽被有机膜覆盖。

公开(公告)号：US09142411B2

公开(公告)日：2015-09-22

申请号：US14090424

申请日：2013-11-26

申请人： Masatoshi Tsujimura ,  Hirokazu Fujiwara ,  Tomoo Morino ,  Narumasa Soejima

发明人： Masatoshi Tsujimura ,  Hirokazu Fujiwara ,  Tomoo Morino ,  Narumasa Soejima

IPC分类号： H01L21/00 ,  H01L21/04 ,  H01L21/673 ,  H01L29/16

CPC分类号： H01L21/046 ,  H01L21/67303 ,  H01L29/1608

摘要： A method for producing a semiconductor device includes: an arranging process of arranging a plurality of silicon carbide wafers having opposed first and surfaces so that the first surface and the second surface of adjacent silicon carbide wafers face each other and are separated in parallel; and a heat treatment process of heating the arranged plurality of silicon carbide wafers so that the first surface of each silicon carbide wafer becomes higher in temperature than the second surface thereof, and, in the adjacent silicon carbide wafers, the second surface of one silicon carbide wafer becomes higher in temperature than the first surface of the other silicon carbide wafer that faces the second surface.

摘要翻译： 一种半导体器件的制造方法，其特征在于，包括：配置多个具有相对的第一面和表面的碳化硅晶片的布置处理，使得相邻碳化硅晶片的第一表面和第二表面彼此面对并且彼此平行分离; 以及加热配置的多个碳化硅晶片的热处理工序，使得碳化硅晶片的第一表面的温度比其第二表面变高，并且在相邻的碳化硅晶片中，一个碳化硅的第二表面 晶片的温度比面向第二表面的另一个碳化硅晶片的第一表面变得更高。