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公开(公告)号：US08287750B2
公开(公告)日：2012-10-16
申请号：US12686899
申请日：2010-01-13
申请人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译： 一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电 用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。 此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。
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公开(公告)号：US07951513B2
公开(公告)日：2011-05-31
申请号：US12434021
申请日：2009-05-01
摘要： A silicon single crystal film having a crystal plane as its principal plane, the crystal plane being inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes is used as a pellicle film. The silicon single crystal having such a crystal plane as its principal plane has effective bond density and Young's modulus thereof which are about 40% to about 50% higher than those of a silicon single crystal with orientation, and therefore a cleavage and crack do not easily occur. Moreover, the silicon single crystal has a high chemical resistance such as hydrofluoric acid resistance, and hardly causes an etch pit and void. Accordingly, the present invention can provide a pellicle comprising a pellicle film for EUV having high transmission, and excellent mechanical and chemical stability, as well as having a high yield, and being practical also in cost.
摘要翻译： 作为防护薄膜，使用具有晶面作为主面的硅单晶膜，该晶面从属于{100}面或{111}面的任何晶格面倾斜3〜5°。 具有作为其主平面的晶面的硅单晶具有有效的键密度和杨氏模量，比具有<100>取向的硅单晶的高约40％至约50％，因此裂纹和裂纹 不容易发生。 此外，硅单晶具有高耐化学腐蚀性，例如耐氢氟酸性，并且几乎不引起蚀刻坑和空隙。 因此，本发明能够提供一种防护薄膜组件，其特征在于，具有透射率高，机械稳定性和化学稳定性优异的EUV用防护薄膜，并且成本高。
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公开(公告)号：US5663865A
公开(公告)日：1997-09-02
申请号：US603155
申请日：1996-02-20
申请人： Nobuo Kawada , Ryoji Nakajima , Toshihiko Shindo , Takaaki Nagao
发明人： Nobuo Kawada , Ryoji Nakajima , Toshihiko Shindo , Takaaki Nagao
IPC分类号： B25J15/06 , C04B35/583 , C04B41/87 , H01L21/00 , H01L21/683 , H02N13/00
CPC分类号： H01L21/67103 , H01L21/6831 , H01L21/6833 , H02N13/00
摘要： Proposed is a ceramic-based electrostatic chuck with built-in heater used in high-temperature processing of a semiconductor silicon wafer, which is capable of exhibiting excellent electrostatic attracting force even at a temperature at which conventional ceramic-based electrostatic chucks cannot exhibit high attracting force. The electrostatic chuck with built-in heater of the invention is an integral body comprising: (a) a base body of a sintered mixture of boron nitride and aluminum nitride; (b) a first pyrolytic graphite layer formed on one surface of the base body to serve as a resistance heater element; (c) a first insulating layer of pyrolytic boron nitride on the first pyrolytic graphite layer; (d) a second pyrolytic graphite layer formed on the other surface of the base body to serve as the electrodes for electrostatic chucking; and (e) a second insulating layer on the second pyrolytic graphite layer formed from a pyrolytic composite nitride of boron and silicon of which the content of silicon is in the range from 1% to 10% by weight having an appropriate volume resistivity at a temperature of 500.degree. to 650.degree. C. as deposited by the pyrolysis of a gaseous mixture of ammonia, boron trichloride and silicon tetrachloride.
摘要翻译： 提出了一种用于半导体硅晶片的高温处理的内置加热器的陶瓷型静电卡盘，其即使在常规的陶瓷基静电卡盘不能显示高吸引力的温度下也能够表现出优异的静电吸引力 力。 本发明的具有内置加热器的静电卡盘是一体的主体，包括：（a）氮化硼和氮化铝的烧结混合物的基体; （b）形成在所述基体的一个表面上以用作电阻加热元件的第一热解石墨层; （c）第一热解石墨层上的热解氮化硼的第一绝缘层; （d）形成在基体的另一个表面上的第二热解石墨层，用作静电吸附用电极; 和（e）由硼和硅的热解复合氮化物形成的第二热解石墨层上的第二绝缘层，其硅含量在1至10重量％的范围内，其温度在适当的体积电阻率 通过氨，三氯化硼和四氯化硅的气体混合物的热解而沉积的500℃至650℃。
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公开(公告)号：US07799238B2
公开(公告)日：2010-09-21
申请号：US12433112
申请日：2009-04-30
申请人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko Shindo , Shin Okamoto , Kimihiro Higuchi
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译： 一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电 用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。 此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。
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公开(公告)号：US20090274962A1
公开(公告)日：2009-11-05
申请号：US12434021
申请日：2009-05-01
IPC分类号： G03F1/00
摘要： A silicon single crystal film having a crystal plane as its principal plane, the crystal plane being inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes is used as a pellicle film. The silicon single crystal having such a crystal plane as its principal plane has effective bond density and Young's modulus thereof which are about 40% to about 50% higher than those of a silicon single crystal with orientation, and therefore a cleavage and crack do not easily occur. Moreover, the silicon single crystal has a high chemical resistance such as hydrofluoric acid resistance, and hardly causes an etch pit and void. Accordingly, the present invention can provide a pellicle comprising a pellicle film for EUV having high transmission, and excellent mechanical and chemical stability, as well as having a high yield, and being practical also in cost.
摘要翻译： 作为防护薄膜，使用具有晶面作为主面的硅单晶膜，该晶面从属于{100}面或{111}面的任何晶格面倾斜3〜5°。 具有作为其主平面的晶面的硅单晶具有有效的键密度和杨氏模量，比具有<100>取向的硅单晶的高约40％至约50％，因此裂纹和裂纹 不容易发生。 此外，硅单晶具有高耐化学腐蚀性，例如耐氢氟酸性，并且几乎不引起蚀刻坑和空隙。 因此，本发明能够提供一种防护薄膜组件，其特征在于，具有透射率高，机械稳定性和化学稳定性优异的EUV用防护薄膜，并且成本高。
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公开(公告)号：US20090212017A1
公开(公告)日：2009-08-27
申请号：US12433112
申请日：2009-04-30
申请人： Toshihiko SHINDO , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko SHINDO , Shin Okamoto , Kimihiro Higuchi
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译： 一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电 用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。 此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。
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7.发明申请Semiconductor device fabricating method, plasma processing system and storage medium 有权半导体器件制造方法，等离子体处理系统和存储介质公开(公告)号：US20080020585A1
公开(公告)日：2008-01-24
申请号：US11727403
申请日：2007-03-26
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/31144 , H01L21/31116 , H01L21/31138 , H01L21/76811
摘要： To provide a manufacturing method for semiconductor manufacturing device that can suppress the development of striations when forming holes by etching an etch target film composed of an inorganic insulating film, a first sacrifice film stacked on this insulating film and having components different from those of the insulating film, a second sacrifice film formed of an inorganic insulating film, whereon a pattern for forming grooves for wiring embedment on the insulating film is formed. In a substrate including a photoresist film, wherein a pattern for forming holes for embedding the wiring material on the upper layer of the above etch target film, a thickness of the above organic layer is greater than a thickness of an etch target layer composed of the above insulating film, the above first sacrifice film and the above second sacrifice film, a mixed gas containing CF4 gas and CHF3 gas is converted into plasma, and the etch target layer is etched by using the plasma.
摘要翻译： 为了提供半导体制造装置的制造方法，其可以通过蚀刻由无机绝缘膜构成的蚀刻目标膜来形成空穴来抑制条纹的发展，第一牺牲膜层叠在该绝缘膜上并且具有与绝缘体不同的成分 膜，由无机绝缘膜形成的第二牺牲膜，其中形成用于形成用于布线埋入绝缘膜的槽的图案。 在包括光致抗蚀剂膜的基板中，其中用于形成用于将布线材料嵌入上述蚀刻靶膜的上层的孔的图案，上述有机层的厚度大于由所述蚀刻目标层构成的蚀刻目标层的厚度 上述绝缘膜，上述第一牺牲膜和上述第二牺牲膜，含有CF 4气体和CHF 3 N 3气体的混合气体被转换成等离子体，并且蚀刻靶 层通过使用等离子体进行蚀刻。
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公开(公告)号：US20050106875A1
公开(公告)日：2005-05-19
申请号：US10948241
申请日：2004-09-24
申请人： Kazuhiro Kubota , Yoshiki Igarashi , Shigeru Tahara , Shin Okamoto , Toshihiko Shindo , Yoshinobu Ooya
发明人： Kazuhiro Kubota , Yoshiki Igarashi , Shigeru Tahara , Shin Okamoto , Toshihiko Shindo , Yoshinobu Ooya
IPC分类号： G03F7/42 , H01L21/027 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/461
CPC分类号： H01L21/31116 , H01J2237/3342 , H01L21/31138
摘要： A plasma ashing method of an object to be processed removes a resist film therefrom in a processing vessel after etching a part of a low dielectric constant film with the resist film having a pattern thereon as a mask in the processing vessel. The plasma ashing method includes a first and a second ashing processes. The first ashing process removes deposits off an inner wall of the processing vessel by using a first processing gas including at least O2 gas while controlling the pressure in the processing vessel to be smaller than or equal to 20 mTorr. The second ashing process removes the resist film by using a second processing gas including at least O2 gas.
摘要翻译： 在处理容器内蚀刻一部分具有图案的抗蚀剂膜作为掩模的低介电常数膜的一部分后，处理容器中的等离子体灰化方法从处理容器中除去抗蚀剂膜。 等离子体灰化方法包括第一和第二灰化过程。 第一灰化过程通过使用包括至少O 2 2气体的第一处理气体同时将处理容器中的压力控制在小于或等于20mTorr，从处理容器的内壁去除沉积物 。 第二灰化处理通过使用至少包含O 2 O 2气体的第二处理气体去除抗蚀剂膜。
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公开(公告)号：US07919217B2
公开(公告)日：2011-04-05
申请号：US12466042
申请日：2009-05-14
摘要： A pellicle film of a silicon single crystal film and a base substrate supporting the pellicle film are formed of a single substrate using an SOI substrate. The base substrate is provided with an opening whose ratio in area to an exposure region when a pellicle is used on a photomask (an open area ratio) is 60% or more, and provided with a reinforcing frame in a non-exposure region of the base substrate. Since the pellicle film and the base substrate supporting the pellicle film are formed of the single substrate (an integrated structure), and the base substrate is provided with the reinforcing frame, the effect of increased strength is obtained. Moreover, a principal plane of a silicon single crystal film is a crystal plane inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes.
摘要翻译： 使用SOI基板由单个基板形成硅单晶膜的防护薄膜和支撑防护薄膜的基板。 基底基板设置有当在光掩模上使用防护薄膜（开放面积比）时的面积与曝光区域的比例为60％以上的开口，并且在该曝光区域的非曝光区域中设置有加强框架 基底。 由于防护薄膜和支撑防护薄膜的基板由单个基板（一体化结构）形成，并且基底基板设置有加强框架，因此获得了提高强度的效果。 此外，硅单晶膜的主面是从属于{100}面或{111}面的任何晶格面倾斜3〜5°的晶面。
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公开(公告)号：US20100112819A1
公开(公告)日：2010-05-06
申请号：US12686899
申请日：2010-01-13
申请人： Toshihiko SHINDO , Shin Okamoto , Kimihiro Higuchi
发明人： Toshihiko SHINDO , Shin Okamoto , Kimihiro Higuchi
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32082 , H01J2237/004 , H01L21/6831
摘要： A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
摘要翻译： 一种等离子体处理方法，用于通过使等离子体作用于待处理衬底上的等离子体处理方法包括以下顺序步骤：使等离子体中使用的等离子体处于弱于等离子体处理的等离子体作用于衬底上，将DC电压施加到静电 用于吸引和保持衬底的卡盘，而弱等离子体作用在衬底上，熄灭弱等离子体并进行等离子体处理。 此外，等离子体处理装置包括用于对要处理的基板进行等离子体处理的等离子体处理机构，以及用于控制等离子体处理机构从而执行等离子体处理方法的控制器。
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