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    Electron tube with improved airtight seal between faceplate and side tube
    1.
    发明授权
    Electron tube with improved airtight seal between faceplate and side tube 失效
    电子管在面板和侧管之间改进了气密密封

    公开(公告)号：US6008579A

    公开(公告)日：1999-12-28

    申请号：US027206

    申请日：1998-02-20

    申请人： Yasuharu Negi ,  Norio Asakura ,  Motohiro Suyama ,  Toshimitsu Nagai

    发明人： Yasuharu Negi ,  Norio Asakura ,  Motohiro Suyama ,  Toshimitsu Nagai

    IPC分类号： H01J40/02 ,  H01J9/26 ,  H01J29/86 ,  H01J43/28 ,  H01J43/04

    CPC分类号： H01J29/86 ,  H01J43/28 ,  H01J9/26

    摘要： An electron tube in which a side tube and a faceplate are sealed together using a malleable metal with a low melting point. The metal is made to spread out along the outer surface of the faceplate due to pressure from a first sealing portion of a sealing metal support member and along the peripheral surface of the electron tube due to pressure from a second sealing portion of the sealing metal support member. Accordingly, the outer side of the corner portion formed by the faceplate and the side tube is covered with the metal. This construction not only reliably secures the input faceplate to the side tube, but also is extremely effective in preserving the airtightness of the electron tube. Since the first sealing portion is pressed toward the faceplate, an appropriate pressure can be applied to the metal interposed between the first sealing portion and the faceplate, improving the sealability of the metal against the faceplate and the first sealing portion. This construction is also appropriate for mass production of electron tubes.

    摘要翻译： 使用低熔点的可锻金属将侧管和面板密封在一起的电子管。 由于来自密封金属支撑构件的第一密封部分的压力以及由于来自密封金属支撑件的第二密封部分的压力而沿着电子管的外周表面，使金属沿着面板的外表面展开 会员。 因此，由面板和侧管形成的角部的外侧被金属覆盖。 这种构造不仅可靠地将输入面板固定在侧管上，而且在保持电子管的气密性方面也是非常有效的。 由于第一密封部分朝向面板按压，所以可以对插入在第一密封部分和面板之间的金属施加适当的压力，从而提高金属对面板和第一密封部分的密封性。 这种结构也适用于大量生产电子管。

    Semiconductor photoelectric surface and its manufacturing method, and photodetecting tube using semiconductor photoelectric surface
    3.
    发明申请
    Semiconductor photoelectric surface and its manufacturing method, and photodetecting tube using semiconductor photoelectric surface 审中-公开
    半导体光电表面及其制造方法，以及使用半导体光电表面的光电管

    公开(公告)号：US20060138395A1

    公开(公告)日：2006-06-29

    申请号：US10515112

    申请日：2003-05-21

    申请人： Yasuyuki Kohno ,  Toshimitsu Nagai ,  Yutaka Hasegawa

    发明人： Yasuyuki Kohno ,  Toshimitsu Nagai ,  Yutaka Hasegawa

    IPC分类号： H01L29/06

    CPC分类号： H01J43/08 ,  H01J1/34 ,  H01J9/12 ,  H01J40/06

    摘要： A semiconductor photocathode of the present invention is provided with: a support substrate 10; a photoelectric surface 30 which is formed of a plurality of semiconductor layers layered on this support substrate 10 and which emits photoelectrons from a photoelectron emitting surface 341 in response to the incidence of light to be detected; and a metal electrode 35 which is formed in film form so as to coat at least a portion of support substrate 10 and a portion of photoelectric surface 30 and which makes ohmic contact with the photoelectric surface, wherein metal electrode 30 in film form includes titanium and the electron affinity of photoelectron emitting surface 341, which is an exposed portion of photoelectric surface 30 without being coated with metal electrode 35 in film form, is in a negative condition.

    摘要翻译： 本发明的半导体光电阴极具有：支撑基板10; 光电表面30，其由层叠在该支撑基板10上的多个半导体层形成，并且响应于待检测的光的入射而从光电子发射表面341发射光电子; 以及形成为膜状以便涂覆至少一部分支撑基板10和光电表面30的一部分并与光电表面欧姆接触的金属电极35，其中膜形式的金属电极30包括钛和 作为光电面30的露出部分的光电子发射表面341的电子亲和力没有涂覆有薄膜形式的金属电极35，处于负面状态。

    Electron tube
    4.
    发明授权
    Electron tube 有权
    电子管

    公开(公告)号：US06538399B1

    公开(公告)日：2003-03-25

    申请号：US09701282

    申请日：2000-11-28

    申请人： Hideki Shimoi ,  Hiroyuki Kyushima ,  Yutaka Hasegawa ,  Toshimitsu Nagai

    发明人： Hideki Shimoi ,  Hiroyuki Kyushima ,  Yutaka Hasegawa ,  Toshimitsu Nagai

    IPC分类号： G01T120

    CPC分类号： H01J43/06

    摘要： To prevent the deterioration in sensitivity of the photocathode (20) of an electron tube and maintain stable output for a long time, an ion confining electrode (22) and an ion trap electrode (23) are provided between the photocathode (20) and a first stage dynode (24a). The potential of the ion confining electrode (22) is set higher than that of the first stage dynode (24a), while the potential of the ion trap electrode (23) is set equal to or higher than that of the photocathode (20) and lower than that of the first stage dynode 24a. Since the feedback to the photocathode (20) of the positive ions generated in the vicinity of the first stage dynode can be effectively suppressed, the sensitivity of the photocathode (20) is prevented from decreasing, and stable output is maintained for a long time.

    摘要翻译： 为了防止电子管的光电阴极（20）的灵敏度下降，并且长时间保持稳定的输出，在光电阴极（20）和光电阴极（20）之间设置离子限制电极（22）和离子阱电极（23） 第一级倍增器（24a）。 离子限制电极（22）的电位被设定为高于第一级倍增极（24a）的电位，而离子捕获电极（23）的电位被设定为等于或高于光电阴极（20）的电位， 低于第一级倍增极24a。 由于可以有效地抑制在第一级倍增电极附近产生的正离子对光电阴极（20）的反馈，防止光电阴极（20）的灵敏度降低，并且长时间保持稳定的输出。