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公开(公告)号：US06897728B2
公开(公告)日：2005-05-24
申请号：US10614015
申请日：2003-07-08
申请人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
发明人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
IPC分类号： H03F3/189 , H01L29/10 , H01L29/417 , H01L29/78 , H01Q11/12 , H03F1/02 , H03F1/22 , H03F1/32 , H03F3/60 , H03F3/72 , H03G1/00 , H04B1/04 , H04K1/02 , H03F3/16
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/4175 , H01L29/7831 , H01L2924/0002 , H03F1/02 , H03F1/223 , H03F3/24 , H03F3/601 , H03F3/72 , H03F2203/7206 , H03G1/007 , H04B2001/045 , H01L2924/00
摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).
摘要翻译： 一种多级放大器结构的高频功率放大器模块，包括：输入端子; 输出端子; 一个控制终端; 和模式切换终端。 第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号 端子施加到第二栅极，例如双栅极FET的源极。 根据来自模式切换端子的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。
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公开(公告)号：US06741125B2
公开(公告)日：2004-05-25
申请号：US10337819
申请日：2003-01-08
申请人： Satoshi Arai , Tsuyoshi Shibuya , Hitoshi Sekiguchi , Nobuhiro Matsudaira , Tomio Furuya , Masashi Maruyama , Yasushi Ohyama
发明人： Satoshi Arai , Tsuyoshi Shibuya , Hitoshi Sekiguchi , Nobuhiro Matsudaira , Tomio Furuya , Masashi Maruyama , Yasushi Ohyama
IPC分类号： H03G320
CPC分类号： H03G3/3047 , H01L2224/48091 , H01L2224/48227 , H01L2924/19105 , H03G3/004 , H03G3/3042 , H01L2924/00014
摘要： The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.
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3.发明授权公开(公告)号：US07145394B2
公开(公告)日：2006-12-05
申请号：US11098454
申请日：2005-04-05
申请人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
发明人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
IPC分类号： H03F3/16
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/4175 , H01L29/7831 , H01L2924/0002 , H03F1/02 , H03F1/223 , H03F3/24 , H03F3/601 , H03F3/72 , H03F2203/7206 , H03G1/007 , H04B2001/045 , H01L2924/00
摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).
摘要翻译： 一种多级放大器结构的高频功率放大器模块，包括：输入端; 输出端子; 一个控制终端; 和模式切换终端。 第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号 端子施加到第二栅极，例如双栅极FET的源极。 根据来自模式切换端子的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。
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公开(公告)号：US07113034B2
公开(公告)日：2006-09-26
申请号：US11122103
申请日：2005-05-05
申请人： Satoshi Arai , Tsuyoshi Shibuya , Hitoshi Sekiguchi , Nobuhiro Matsudaira , Tomio Furuya , Masashi Maruyama , Yasushi Ohyama
发明人： Satoshi Arai , Tsuyoshi Shibuya , Hitoshi Sekiguchi , Nobuhiro Matsudaira , Tomio Furuya , Masashi Maruyama , Yasushi Ohyama
IPC分类号： H03G3/30
CPC分类号： H03G3/3047 , H01L2224/48091 , H01L2224/48227 , H01L2924/19105 , H03G3/004 , H03G3/3042 , H01L2924/00014
摘要： The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.
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公开(公告)号：US20050200407A1
公开(公告)日：2005-09-15
申请号：US11122103
申请日：2005-05-05
申请人： Satoshi Arai , Tsuyoshi Shibuya , Hitoshi Sekiguchi , Nobuhiro Matsudaira , Tomio Furuya , Masashi Maruyama , Yasushi Ohyama
发明人： Satoshi Arai , Tsuyoshi Shibuya , Hitoshi Sekiguchi , Nobuhiro Matsudaira , Tomio Furuya , Masashi Maruyama , Yasushi Ohyama
CPC分类号： H03G3/3047 , H01L2224/48091 , H01L2224/48227 , H01L2924/19105 , H03G3/004 , H03G3/3042 , H01L2924/00014
摘要： The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.
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公开(公告)号：US06753735B2
公开(公告)日：2004-06-22
申请号：US10294597
申请日：2002-11-15
申请人： Satoshi Arai , Tsuyoshi Shibuya , Hitoshi Sekiguchi , Nobuhiro Matsudaira , Tomio Furuya , Masashi Maruyama , Yasushi Ohyama
发明人： Satoshi Arai , Tsuyoshi Shibuya , Hitoshi Sekiguchi , Nobuhiro Matsudaira , Tomio Furuya , Masashi Maruyama , Yasushi Ohyama
IPC分类号： H03G320
CPC分类号： H03G3/3047 , H01L2224/48091 , H01L2224/48227 , H01L2924/19105 , H03G3/004 , H03G3/3042 , H01L2924/00014
摘要： The present invention provides a high frequency power amplifier of an open-loop type, which outputs a signal having a level corresponding to an output level required under control of a power supply voltage for each output power FET, based on a control signal for the output level. The high frequency power amplifier is provided with a bias voltage generating circuit which generates a gate bias voltage of each output power FET according to an output voltage of a power control circuit for controlling the power supply voltage for the output power FET, based on the control signal for the output level.
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公开(公告)号：US06617927B2
公开(公告)日：2003-09-09
申请号：US10122382
申请日：2002-04-16
申请人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
发明人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
IPC分类号： H03F316
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/4175 , H01L29/7831 , H01L2924/0002 , H03F1/02 , H03F1/223 , H03F3/24 , H03F3/601 , H03F3/72 , H03F2203/7206 , H03G1/007 , H04B2001/045 , H01L2924/00
摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).
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8.发明申请公开(公告)号：US20050208905A1
公开(公告)日：2005-09-22
申请号：US11098454
申请日：2005-04-05
申请人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
发明人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
IPC分类号： H03F3/189 , H01L29/10 , H01L29/417 , H01L29/78 , H01Q11/12 , H03F1/02 , H03F1/22 , H03F1/32 , H03F3/60 , H03F3/72 , H03G1/00 , H04B1/04 , H04K1/02
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/4175 , H01L29/7831 , H01L2924/0002 , H03F1/02 , H03F1/223 , H03F3/24 , H03F3/601 , H03F3/72 , H03F2203/7206 , H03G1/007 , H04B2001/045 , H01L2924/00
摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).
摘要翻译： 一种多级放大器结构的高频功率放大器模块，包括：输入端; 输出端子; 一个控制终端; 和模式切换终端。 第一放大级包括双栅极FET，并且根据信号的偏置电压从控制端子和模式切换端子施加到双栅极FET的第一栅极和第二栅极，以及来自输入端的无线电信号 端子施加到第二栅极，例如双栅极FET的源极。 根据来自模式切换端子的信号，高频功率放大器模块的模式用于GSM（即，用于非线性放大动作）和EDGE（用于线性放大动作）。
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公开(公告)号：US5574993A
公开(公告)日：1996-11-12
申请号：US308669
申请日：1994-09-19
CPC分类号： H04W52/52 , H03G3/3042 , Y02B60/50
摘要： A mobile communication apparatus is provided, in which the linearity during a small output power of a radio-frequency power amplifier can be maintained as during a large output power. The input signal power to a radio-frequency power amplifier is decreased by an attenuator during a small power output. The resulting downward trend of the transmission signal power is compensated for by increasing the gain of the radio-frequency amplifier circuit through a transmission power control circuit. Under this condition, the radio-frequency power amplifier is made operable in a linear region of the transistor in the same manner as during a large power output. As a result, the linearity of the amplifier is guaranteed over the whole operating range of the transmission power.
摘要翻译： 提供了一种移动通信装置，其中可以在大输出功率期间保持在射频功率放大器的小输出功率期间的线性度。 在小功率输出期间，通过衰减器降低对射频功率放大器的输入信号功率。 通过通过发送功率控制电路增加射频放大器电路的增益来补偿所产生的发送信号功率的下降趋势。 在这种条件下，射频功率放大器可以在与大功率输出时相同的方式在晶体管的线性区域中可操作。 因此，在发射功率的整个工作范围内保证放大器的线性度。
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公开(公告)号：US4777398A
公开(公告)日：1988-10-11
申请号：US47675
申请日：1987-05-08
申请人： Tsuyoshi Shibuya
发明人： Tsuyoshi Shibuya
摘要： A displacement transmitting apparatus comprising a shaft hole which throttles by piezoelectric effect, and a shaft slidably inserted into the shaft hole engaged with a driving means which advances steppingly by mechanically amplified piezoelectric effect. On-off controlling of electric voltage for the displacement transmitting apparatus and the driving means causes the shaft to advance or conversely causes the driving means to advance where the shaft is fixed.
摘要翻译： 一种位移传递装置，包括通过压电效应节流的轴孔，以及可滑动地插入到轴孔中的轴，其与通过机械放大的压电效应逐步前进的驱动装置接合。 对位移传动装置和驱动装置的电压进行开 - 关控制使轴推进或相反地使驱动装置在轴被固定的情况下前进。
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