公开(公告)号：US06465369B1

公开(公告)日：2002-10-15

申请号：US09488847

申请日：2000-01-21

Applicant: Tun-ho Teng ,  Ta-te Chen ,  Chih-hung Shu ,  Chan-bin Ho

Inventor： Tun-ho Teng ,  Ta-te Chen ,  Chih-hung Shu ,  Chan-bin Ho

IPC: H01L2131

CPC classification number: H01L21/67248 ,  C23C14/02 ,  C23C14/541

Abstract: A method for stabilizing a degas temperature of wafers in a degas chamber comprises (a) setting an electrical heater at an initial output power, (b) heating each wafer for a first period of time to keep the temperature of the wafer at a predetermined range by setting the electrical heater at a first output power equal to or higher than the initial output power, (c) heating the wafer for a second period of time to increase the temperature of the wafer to a predetermined value by raising the output power of the electrical heater to a second output power; and (d) heating the wafer for a third period of time by reducing the output power of the electrical heater to a third output power. The method lessens the “first wafer effect” and the “temperature-accumulated effect”. Therefore, the temperature of the wafers can be well controlled before a subsequent sputtering process.

Abstract translation: 用于稳定脱气室中的晶片脱气温度的方法包括（a）将电加热器设置在初始输出功率，（b）加热每个晶片第一时间段以将晶片的温度保持在预定范围 通过将电加热器设定为等于或高于初始输出功率的第一输出功率，（c）将晶片加热第二时间段，以通过提高晶片的输出功率将晶片的温度增加到预定值 电加热器到第二输出功率; 和（d）通过将电加热器的输出功率降低到第三输出功率来加热晶片第三时间段。 该方法减轻了“第一晶片效应”和“温度累积效应”。 因此，在随后的溅射工艺之前可以很好地控制晶片的温度。

公开(公告)号：US06387231B1

公开(公告)日：2002-05-14

申请号：US09928519

申请日：2001-08-14

Applicant: Tun-Ho Teng ,  Ching-Chao Wang

Inventor： Tun-Ho Teng ,  Ching-Chao Wang

IPC: C23C1434

CPC classification number: C23C14/50 ,  C23C14/541 ,  C23C14/564

Abstract: A susceptor device in a masked sputtering chamber is disclosed. The device of the present invention comprises a susceptor, a lifter and at least one heater. The susceptor, having at least one trench, is coupled with the lifter having at least one rod. The heater is disposed in the trench and coupled with the rod through the access hole at the bottom of the trench. After the sputtering process for forming indium tin oxide (ITO) film is completed, a baking process is applied to the mask in the chamber for converting the amorphous ITO film formed on the mask to polycrystalline ITO film, thereby increasing the life of the mask.

Abstract translation: 公开了一种在掩模溅射室中的感受器件。 本发明的装置包括基座，升降器和至少一个加热器。 具有至少一个沟槽的感受体与具有至少一个杆的升降器联接。 加热器设置在沟槽中，并通过沟槽底部的通孔与棒连接。 在完成用于形成氧化铟锡（ITO）膜的溅射工艺之后，对用于将形成在掩模上的非晶ITO膜转换为多晶ITO膜的室中的掩模施加烘烤处理，从而延长掩模的寿命。

公开(公告)号：US20060191782A1

公开(公告)日：2006-08-31

申请号：US10908068

申请日：2005-04-26

Applicant: Tun-Ho Teng ,  Chun-Hsia TENG HUANG ,  Kei-Hsiung YANG ,  Cheng-Chung Lee ,  Hsin-Yi Chen ,  Wei-Chou CHEN

Inventor： Tun-Ho Teng ,  Chun-Hsia TENG HUANG ,  Kei-Hsiung YANG ,  Cheng-Chung Lee ,  Hsin-Yi Chen ,  Wei-Chou CHEN

IPC: C23C14/32 ,  C23C14/00

CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/3414 ,  H01J37/3426

Abstract: A method of improving the magnetic field uniformity of a magnetron sputtering equipment is disclosed. The method includes providing an equipment having a magnetic field generating device and a magnetic field receiving surface; utilizing the equipment multiple times to acquire the magnetic field intensity distribution on the magnetic field receiving surface; preparing a compensation plate corresponding to the magnetic field intensity distribution, such that the area of the compensation plate corresponding to the area of the magnetic field receiving surface with stronger magnetic field has a stronger ferromagnetic property and the area corresponding to the area of the magnetic field receiving surface with weaker magnetic field has a weaker ferromagnetic property; and installing the compensation plate between the magnetic field generating device and the magnetic field receiving surface for improving the magnetic field uniformity of the magnetic field receiving surface.

Abstract translation: 公开了一种提高磁控溅射设备的磁场均匀性的方法。 该方法包括提供具有磁场产生装置和磁场接收表面的设备; 多次利用设备获取磁场接收面上的磁场强度分布; 制备对应于磁场强度分布的补偿板，使得对应于具有较强磁场的磁场接收表面的面积的补偿板的面积具有更强的铁磁性质和对应于磁场面积的面积 磁场较弱的接收面具有较弱的铁磁特性; 以及在磁场产生装置和磁场接收表面之间安装补偿板，以改善磁场接收表面的磁场均匀性。

公开(公告)号：US20050011758A1

公开(公告)日：2005-01-20

申请号：US10917296

申请日：2004-08-13

Applicant: Tun-Ho Teng ,  Cheng-Chung Lee

Inventor： Tun-Ho Teng ,  Cheng-Chung Lee

IPC: H01L21/203 ,  C23C14/35 ,  H01J37/34 ,  C23C14/00

CPC classification number: H01J37/3408 ,  C23C14/35 ,  H01J37/3455 ,  H01J2237/31744

Abstract: A magnetic control oscillation-scanning sputter includes a sputtering target, a base and an elongated magnet. The sputtering target has a surface with a target located thereon corresponding to the base. The target being sputtered is deposited on the base. The elongated magnet is located on the rear side of the sputtering target and moved reciprocately to control the deposition of the target. The elongated magnet has two ends each which is coupled with a magnetic erasing means for reducing excessive magnetic field intensity at the two ends to avoid affecting the sputter quality.

Abstract translation: 磁控振荡扫描溅射包括溅射靶，基底和细长磁体。 溅射靶具有位于其上的与基底相对应的靶的表面。 被溅射的靶材沉积在基底上。 细长磁体位于溅射靶的后侧并往复运动以控制靶的沉积。 细长磁体具有两个端部，每个端部与用于减小两端的过大磁场强度的磁性擦除装置耦合，以避免影响溅射质量。

公开(公告)号：US06793785B2

公开(公告)日：2004-09-21

申请号：US10277826

申请日：2002-10-23

Applicant: Tun-Ho Teng ,  Cheng-Chung Lee

Inventor： Tun-Ho Teng ,  Cheng-Chung Lee

IPC: C23C1435

CPC classification number: H01J37/3408 ,  C23C14/35 ,  H01J37/3455 ,  H01J2237/31744

Abstract: A magnetic control oscillation-scanning sputter includes a sputtering target, a base and an elongated magnet. The sputtering target has a surface with a target located thereon corresponding to the base. The target being sputtered is deposited on the base. The elongated magnet is located on the rear side of the sputtering target and moved reciprocately to control the deposition of the target. The elongated magnet has two ends each which is coupled with a magnetic erasing means for reducing excessive magnetic field intensity at the two ends to avoid affecting the sputter quality.

Abstract translation: 磁控振荡扫描溅射包括溅射靶，基底和细长磁体。 溅射靶具有位于其上的与基底相对应的靶的表面。 被溅射的靶材沉积在基底上。 细长磁体位于溅射靶的后侧并往复运动以控制靶的沉积。 细长磁体具有两个端部，每个端部与用于减小两端的过大磁场强度的磁性擦除装置耦合，以避免影响溅射质量。

公开(公告)号：US06723210B2

公开(公告)日：2004-04-20

申请号：US10255298

申请日：2002-09-26

Applicant: Tun-Ho Teng ,  Yung-Fu Chen

Inventor： Tun-Ho Teng ,  Yung-Fu Chen

IPC: C23C1435

CPC classification number: C23C14/35 ,  H01J37/3408

Abstract: A method for improving a performance of a sputtering target in a magnetron sputtering system having at least one magnet repetitively and retracingly scanning between two sides thereof and receiving a power input changing with a scanning position of the magnet is provided. The method includes the steps of stepwise reducing the power input while the magnet approaches a specific distance range near a retracing point, so as to reduce an erosion rate of the sputtering target by the magnetron sputtering system, and increasing the power input to a specific value while the magnet leaves the specific distance range, wherein the power input changes with the scanning position of the magnet, so as to improve the performance of the sputtering target.

Abstract translation: 提供了一种用于改善磁控溅射系统中的溅射靶的性能的方法，该方法具有至少一个磁体，其两面之间重复地并且进行回扫，并接收随磁体的扫描位置变化的电力输入。 该方法包括以下步骤：当磁体接近回扫点附近的特定距离范围时逐步减小功率输入，以便通过磁控溅射系统降低溅射靶的侵蚀速率，并将功率输入增加到特定值 同时磁体离开特定的距离范围，其中功率输入随着磁体的扫描位置而变化，以提高溅射靶的性能。