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    END POINT DETERMINATION BY MEANS OF CONTRAST GAS
    1.
    发明公开
    END POINT DETERMINATION BY MEANS OF CONTRAST GAS 审中-公开

    公开(公告)号：US20230341766A1

    公开(公告)日：2023-10-26

    申请号：US18212768

    申请日：2023-06-22

    申请人： Carl Zeiss SMT GmbH

    发明人： Daniel Rhinow

    IPC分类号： G03F1/74 ,  H01J37/305

    CPC分类号： G03F1/74 ,  H01J37/3056 ,  H01J2237/30466 ,  H01J2237/31744 ,  H01J2237/006

    摘要： The present invention encompasses a method of repairing a defect on a lithography mask, comprising the following steps: (a.) directing a particle beam onto the defect to induce a local etching operation on the defect; (b.) monitoring the etching operation using backscattered particles and/or secondary particles and/or another free-space signal generated by the etching operation, in order to detect a transition from the local etching operation on the defect to a local etching operation on an element of the mask beneath the defect, and (c.) feeding in at least one contrast gas in order to increase contrast in the detection of the transition.

    Method of processing a material-specimen
    3.
    发明授权
    Method of processing a material-specimen 有权
    材料标本处理方法

    公开(公告)号：US09543117B2

    公开(公告)日：2017-01-10

    申请号：US14077535

    申请日：2013-11-12

    申请人： Carl Zeiss Microscopy GmbH

    发明人： Roland Salzer

    IPC分类号： B44C1/22 ,  H01J37/305 ,  H01L21/02 ,  B23K26/03 ,  B23K26/14 ,  B23K26/36 ,  G01N1/32

    CPC分类号： H01J37/3053 ,  B23K26/03 ,  B23K26/14 ,  B23K26/361 ,  B23K26/362 ,  G01N1/32 ,  H01J37/3056 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01L21/02

    摘要： A method for generating a smooth surface in a material-specimen includes generating a substantially smooth, first surface region by removing a first material-volume by particle beam etching. The first material-volume is partially defined by the first surface region. An angle between a beam direction and a surface normal of the first surface region is greater than 80° and less than 90°. The method also includes generating a substantially smooth, second surface region by removing a second material-volume. The second material-volume is partially defined by the first surface region and is partially defined by the second surface region. An angle between the beam direction and a surface normal of the second surface region is less than 60°.

    摘要翻译： 用于在材料样品中产生光滑表面的方法包括通过通过粒子束蚀刻去除第一材料体积而产生基本平滑的第一表面区域。 第一材料体积由第一表面区域部分地限定。 第一表面区域的光束方向和表面法线之间的角度大于80°且小于90°。 该方法还包括通过去除第二材料体积来产生基本平滑的第二表面区域。 第二材料体积部分地由第一表面区域限定，并且部分地由第二表面区域限定。 光束方向与第二表面区域的表面法线之间的角度小于60°。

    GAS INJECTION SYSTEM WITH PRECURSOR FOR PLANAR DEPROCESSING OF SEMICONDUCTOR DEVICES USING A FOCUSED ION BEAM
    5.
    发明申请
    GAS INJECTION SYSTEM WITH PRECURSOR FOR PLANAR DEPROCESSING OF SEMICONDUCTOR DEVICES USING A FOCUSED ION BEAM 审中-公开
    使用聚焦离子束的半导体器件的平面去除前馈器的气体注入系统

    公开(公告)号：US20150294885A1

    公开(公告)日：2015-10-15

    申请号：US14747491

    申请日：2015-06-23

    申请人： FEI Company

    发明人： Chad Rue ,  Clive D. Chandler

    IPC分类号： H01L21/67 ,  H01J37/32

    CPC分类号： H01L21/67069 ,  H01J37/3056 ,  H01J37/3233 ,  H01J37/3244 ,  H01J2237/3151 ,  H01J2237/31744 ,  H01J2237/31749 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32131 ,  H01L21/32136 ,  H01L21/76892

    摘要： A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

    摘要翻译： 一种用于使用聚焦离子束系统改进半导体器件的平面去除处理的方法和系统。 该方法包括限定要去除的目标区域，所述目标区域包括半导体器件的混合铜和电介质层的至少一部分; 将前体气体引向目标区域; 并且在存在前体气体的情况下将聚焦离子束引向目标区域，从而去除第一混合铜和电介质层的至少一部分，并在研磨的目标区域中产生均匀光滑的地板。 前体气体导致聚焦离子束以与电介质基本相同的速率研磨铜。 在优选的实施方案中，前体气体包括硝基乙酸甲酯。 在替代实施方案中，前体气体是乙酸甲酯，乙酸乙酯，硝基乙酸乙酯，乙酸丙酯，硝基乙酸丙酯，硝基乙酸乙酯，甲氧基乙酸甲酯或甲氧基乙酰氯。

    Repair Apparatus
    6.
    发明申请
    Repair Apparatus 有权
    维修设备

    公开(公告)号：US20150053866A1

    公开(公告)日：2015-02-26

    申请号：US14466524

    申请日：2014-08-22

    申请人： Hitachi High-Tech Science Corporation

    发明人： Fumio Aramaki ,  Anto Yasaka ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Hiroshi Oba ,  Tomokazu Kozakai ,  Kazuo Aita

    IPC分类号： G21K5/04 ,  G21K1/14 ,  H01J37/305

    CPC分类号： G21K5/04 ,  G21K1/14 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/0807 ,  H01J2237/202 ,  H01J2237/31744

    摘要： There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.

    摘要翻译： 提供了一种包括气体离子源的修复装置，其包括具有尖锐尖端的离子产生部分，冷却尖端的冷却单元，通过聚焦离子束的离子聚焦而形成聚焦离子束的离子束柱 气体离子源，将待聚焦离子束照射的样品放置在其上的样品台，容纳至少其中的样品台的样品室和用于修复掩模或模具的控制单元，用于纳米 作为样品的压印光刻，由离子束柱形成的聚焦离子束。 气体离子源产生氮离子作为离子，并且尖端由能够产生离子的铱单晶构成。

    METHOD OF WELDING A FROZEN AQUEOUS SAMPLE TO A MICROPROBE
    7.
    发明申请
    METHOD OF WELDING A FROZEN AQUEOUS SAMPLE TO A MICROPROBE 有权
    将微生物冷冻样品焊接的方法

    公开(公告)号：US20140367571A1

    公开(公告)日：2014-12-18

    申请号：US14302024

    申请日：2014-06-11

    申请人： FEI Company

    发明人： Rudolf Johannes Peter Gerardus Schampers ,  Johannes Antonius Hendricus Wilhelmus Gerardus Persoon ,  Andreas Theodorus Engelen

    IPC分类号： H01J37/20 ,  H01J37/26

    CPC分类号： H01J37/20 ,  G01N1/28 ,  G01N1/42 ,  G02B21/32 ,  H01J37/26 ,  H01J37/315 ,  H01J2237/002 ,  H01J2237/2065 ,  H01J2237/31744 ,  H01J2237/31745

    摘要： The invention relates to a method of welding a vitreous biological sample at a temperature below the glass transition temperature of approximately −137° C. to a micromanipulator, also kept at a temperature below the glass transition temperature. Where prior art methods used IBID with, for example, propane, or a heated needle (heated resistively or by e/g/laser), the invention uses a vibrating needle to locally melt the sample. By stopping the vibration, the sample freezes to the micromanipulator. The heat capacity of the heated parts is small, and the amount of material that stays in a vitreous condition thus large.

    摘要翻译： 本发明涉及一种将玻璃态生物样品在低于大约-137℃的玻璃化转变温度的温度下焊接到也保持在低于玻璃化转变温度的温度下的显微操纵器的方法。 当现有技术方法使用IBID与例如丙烷或加热针（电阻加热或e / g /激光）时，本发明使用振动针来局部熔化样品。 通过停止振动，样品冻结到显微操纵器。 加热部件的热容量小，因此玻璃状态的材料的量变大。

    High Resolution Plasma Etch
    8.
    发明申请
    High Resolution Plasma Etch 审中-公开
    高分辨率等离子体蚀刻

    公开(公告)号：US20130192758A1

    公开(公告)日：2013-08-01

    申请号：US13669195

    申请日：2012-11-05

    申请人： FEI Company

    发明人： Milos Toth ,  Noel Smith

    IPC分类号： B05C21/00

    CPC分类号： B05C21/005 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01J2237/31749

    摘要： An apparatus for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.

    摘要翻译： 一种用于制造微观结构的装置，其使用诸如光束诱导的前体分解的光束过程，以精确图案沉积掩模，然后选择性等离子体束，包括以下步骤：首先创建保护掩模 使用诸如电子束，聚焦离子束（FIB）或激光工艺的光束过程在衬底的表面部分上，并且其次使用选择性等离子体束蚀刻工艺来蚀刻未掩模的衬底部分。 可选地，包括去除保护掩模的第三步骤可以用第二种，实质上相对地选择的等离子体束工艺进行。

    Photomask defect correcting method and device
    10.
    发明授权
    Photomask defect correcting method and device 有权
    光掩模缺陷校正方法及装置

    公开(公告)号：US08257887B2

    公开(公告)日：2012-09-04

    申请号：US12733090

    申请日：2008-08-06

    申请人： Osamu Takaoka

    发明人： Osamu Takaoka

    IPC分类号： G03F1/72 ,  G03F1/74

    CPC分类号： G03F1/74 ,  H01J37/3056 ,  H01J2237/0807 ,  H01J2237/31744

    摘要： A photomask defect correction method for correcting a defect of a photomask. A defect in a portion of a photomask to be corrected is observed and information of the observed defect for performing correction of the defect is acquired. The observed defect is corrected in accordance with the acquired defect information by irradiating the observed defect with a focused ion beam from an ion beam irradiation system having a gas field ion source that generates rare gas ions for forming the focused ion beam.

    摘要翻译： 一种用于校正光掩模缺陷的光掩模缺陷校正方法。 观察要校正的光掩模的一部分中的缺陷，并且获取用于执行缺陷校正的观察到的缺陷的信息。 通过用具有产生稀有气体离子的气体离子源的离子束照射系统的聚焦离子束照射观察到的缺陷，观察到的缺陷根据获取的缺陷信息进行校正，以形成聚焦离子束。