Abstract:
An in-situ method of stripping a layer of resist from a substrate or wafer utilizes pure H2O plasma recipe to substantially prevent charges from accumulating on the substrate or wafer during stripping of the layer of resist.
Abstract translation:从衬底或晶片剥离抗蚀剂层的原位方法利用纯H 2 O 2等离子体配方,以在剥离抗蚀剂层期间基本上防止电荷积聚在衬底或晶片上。
Abstract:
An in-situ performed method utilizing a pure H2O plasma to remove a layer of resist from a substrate or wafer without substantially accumulating charges thereon. Also, in-situ performed methods utilizing a pure H2O plasma or a pure H2O vapor to release or remove charges from a surface or surfaces of a substrate or wafer that have accumulated during one or more IC fabrication processes.
Abstract translation:使用纯H 2 O 2等离子体的原位执行方法从衬底或晶片上去除一层抗蚀剂,而基本上不累积电荷。 而且,使用纯H 2 O 2等离子体或纯H 2 O 2蒸气的原位实施方法从基板或晶片的表面或表面释放或去除电荷 其在一个或多个IC制造过程中积累。
Abstract:
A clipping mechanism and electronic apparatus are provided. The clipping mechanism for clipping an object comprises a casing and a sliding device. The casing has a socket for containing the object. The sliding device disposed on the casing, has a clipping bump and sliding between a first position and a second position along a first direction. When the sliding device slides to the second position, the sliding device selectively moves forward and backward to the object along a second direction. When the sliding device slides between the first position and the second position, the clipping bump limits the object to be clipped with the socket. When the sliding device is located at the second position and slides away from the object toward a third position along the second direction, the clipping bump is separated from the object such that the object can be removed from the socket.