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公开(公告)号：US20060292848A1
公开(公告)日：2006-12-28
申请号：US11510608
申请日：2006-08-28
IPC: H01L21/44
CPC classification number: H01L51/0023 , B82Y10/00 , H01L51/0595 , Y10S977/78 , Y10S977/781 , Y10S977/784 , Y10S977/932
Abstract: Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.
Abstract translation: 提供一种纳米间隙电极器件的制造方法，包括以下步骤：在衬底上形成第一电极; 在所述第一电极的侧壁上形成间隔物; 在所述间隔物的一侧的暴露的基板上形成第二电极; 并且通过去除间隔物在第一电极和第二电极之间形成纳米间隙，从而可以可再现地控制纳米间隙位置，宽度，形状等，并且制造多个纳米间隙电极 设备同时进行。
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公开(公告)号：US20060131569A1
公开(公告)日：2006-06-22
申请号：US11202447
申请日：2005-08-12
IPC: H01L29/08 , H01L23/48 , H01L29/792 , H01L29/00 , H01L29/788
CPC classification number: G11C13/0014 , B82Y10/00 , G11C13/0016 , H01L27/285 , H01L51/0595
Abstract: An organic memory device and a method of manufacturing the same are disclosed. The organic memory device includes an electron channel layer including an organic layer, in which nano particles of a uniform size are dispersed, interposed between metal electrodes, thus having electrical bistability. The organic memory device uses a change of electrical conductivity which results from a substantial change of the electrical structure of the electron channel layer when a voltage is applied. The organic memory device can be integrated using a simple manufacturing process, and ensures uniformity between devices due to the threshold voltage characteristics, even when highly miniaturized.
Abstract translation: 公开了一种有机存储器件及其制造方法。 有机存储装置包括电子通道层，其包含均匀尺寸的纳米颗粒分散在金属电极之间的有机层，因此具有电双稳性。 有机存储器件使用当施加电压时由电子通道层的电结构的实质变化导致的电导率的变化。 有机存储器件可以使用简单的制造工艺进行集成，并且即使在高度小型化的情况下也能够由于阈值电压特性而确保器件之间的均匀性。
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公开(公告)号：US20050112860A1
公开(公告)日：2005-05-26
申请号：US10800704
申请日：2004-03-16
IPC: H01L21/28 , H01L21/44 , H01L21/4763 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC classification number: H01L51/0023 , B82Y10/00 , H01L51/0595 , Y10S977/78 , Y10S977/781 , Y10S977/784 , Y10S977/932
Abstract: Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.
Abstract translation: 提供一种纳米间隙电极器件的制造方法，包括以下步骤：在衬底上形成第一电极; 在所述第一电极的侧壁上形成间隔物; 在所述间隔物的一侧的暴露的基板上形成第二电极; 并且通过去除间隔物在第一电极和第二电极之间形成纳米间隙，从而可以可再现地控制纳米间隙位置，宽度，形状等，并且制造多个纳米间隙电极 设备同时进行。
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公开(公告)号：US20050135144A1
公开(公告)日：2005-06-23
申请号：US10863413
申请日：2004-06-07
Applicant: Sung Choi , Chan Park , Sangouk Ryu , Han Yu , Ung Pi , Taehyoung Zyung
Inventor： Sung Choi , Chan Park , Sangouk Ryu , Han Yu , Ung Pi , Taehyoung Zyung
CPC classification number: G11C13/0014 , B82Y10/00 , G11C13/0009 , G11C13/025 , G11C2213/17
Abstract: A molecular switching device including: a channel unit which constructs an electron channel for allowing electron to flow therethrough; an electrode which is in contact with both ends of the channel unit; and a control unit which is connected with the channel unit through a connection unit to have an oxidation state or an electron density differentiated depending on voltage applied through the electrode, thereby varying an electric conductivity of the channel unit.
Abstract translation: 一种分子切换装置，包括：通道单元，其构造用于使电子流过的电子通道; 与通道单元的两端接触的电极; 以及控制单元，其通过连接单元与通道单元连接以具有根据通过电极施加的电压而微分的氧化态或电子密度，从而改变通道单元的电导率。
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