Method for manufacturing nano-gap electrode device
    1.
    发明申请
    Method for manufacturing nano-gap electrode device 失效
    纳米间隙电极器件的制造方法

    公开(公告)号:US20060292848A1

    公开(公告)日:2006-12-28

    申请号:US11510608

    申请日:2006-08-28

    IPC分类号: H01L21/44

    摘要: Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.

    摘要翻译: 提供一种纳米间隙电极器件的制造方法,包括以下步骤:在衬底上形成第一电极; 在所述第一电极的侧壁上形成间隔物; 在所述间隔物的一侧的暴露的基板上形成第二电极; 并且通过去除间隔物在第一电极和第二电极之间形成纳米间隙,从而可以可再现地控制纳米间隙位置,宽度,形状等,并且制造多个纳米间隙电极 设备同时进行。

    Novel polyarylate and method for preparing thereof
    5.
    发明申请
    Novel polyarylate and method for preparing thereof 审中-公开
    新型多芳基化合物及其制备方法

    公开(公告)号:US20070060737A1

    公开(公告)日:2007-03-15

    申请号:US11518986

    申请日:2006-09-12

    IPC分类号: C08G63/19

    摘要: The present invention relates to a polyarylate prepared by a method comprising a step of copolymerizing divalent phenol, divalent aromatic carboxylic acid halide and the allyl bisphenol derivative. The polyarylate according to the invention is a novel polyarylate in which various functional groups can be introduced to the main chain of the polymer as well as the terminal of a polymer, and the concentration thereof can be adjusted. These functional groups allow improvement in the adhesion force by chemically bonding with the substrate or protective layer when coated, thus the polyarylate is suitably used for a film or a coating composition.

    摘要翻译: 本发明涉及一种通过包括使二价苯酚,二价芳族羧酸卤化物与烯丙基双酚衍生物共聚的方法制备的多芳基化合物。 根据本发明的多芳基化合物是一种新的多芳基化合物,其中可以将各种官能团引入聚合物的主链以及聚合物的末端,并且可以调节其浓度。 这些官能团通过在涂布时与基材或保护层进行化学键合来改善粘附力,因此多芳基化合物适合用于膜或涂料组合物。

    Tool magazine feeder for automatic tool changer
    6.
    发明申请
    Tool magazine feeder for automatic tool changer 审中-公开
    用于自动换刀的刀库进料器

    公开(公告)号:US20050143237A1

    公开(公告)日:2005-06-30

    申请号:US11008668

    申请日:2004-12-10

    申请人: Sang Ryu

    发明人: Sang Ryu

    IPC分类号: B23Q3/155 B23Q3/157

    摘要: A tool magazine feeder for an automatic tool changer for feeding a tool magazine to a spindle comprises a carriage horizontally movable, under the state of supporting the tool magazine, between a remote position where the carriage is separated from the spindle and a proximate position where the carriage is adjacent to the spindle, a driving mechanism for reciprocating the carriage from the remote position to the proximate position and vice versa, and a guide mechanism positioned between the carriage and the driving mechanism. The guide mechanism is provided with one or more rollers and one or more rails for guiding the carriage to horizontally move between the remote position and the proximate position.

    摘要翻译: 一种用于将工具仓馈送到主轴的自动换刀装置的刀库输送器包括:在托架与主轴分离的远程位置与托架与主轴分离的远程位置之间水平移动的托架在支撑工具仓的状态下水平移动, 滑架与主轴相邻,用于使滑架从远程位置往复运动的驱动机构反之亦然,以及定位在滑架和驱动机构之间的引导机构。 引导机构设置有一个或多个辊和一个或多个轨道,用于引导托架在远程位置和邻近位置之间水平移动。

    Phase change memory device and method of manufacturing the same
    7.
    发明申请
    Phase change memory device and method of manufacturing the same 审中-公开
    相变存储器件及其制造方法

    公开(公告)号:US20070025226A1

    公开(公告)日:2007-02-01

    申请号:US11490405

    申请日:2006-07-20

    IPC分类号: G11B7/00

    摘要: Provided are a phase change memory device and a method of fabricating the same capable of maximizing a contact area of a phase change layer and a heating electrode. The memory device includes a heating electrode and a phase change layer. The heating electrode covers at least one side exposed by a pore and a portion of a surface of a lower electrode and includes a recess region. The phase change layer is stacked on the heating electrode filling up the recess region. The memory device may maximize a contact area of the phase change layer and the heating electrode, thereby greatly reducing power consumption.

    摘要翻译: 提供一种相变存储器件及其制造方法,其能够最大化相变层和加热电极的接触面积。 存储装置包括加热电极和相变层。 加热电极覆盖由孔隙和下部电极的表面的一部分露出的至少一个侧面,并且包括凹部区域。 相变层层叠在填充凹部的加热电极上。 存储器件可以使相变层和加热电极的接触面积最大化,从而大大降低功耗。

    Method for forming interlayer insulation film in semiconductor device
    8.
    发明申请
    Method for forming interlayer insulation film in semiconductor device 有权
    在半导体器件中形成层间绝缘膜的方法

    公开(公告)号:US20050142848A1

    公开(公告)日:2005-06-30

    申请号:US10878317

    申请日:2004-06-29

    申请人: Kang Shin Sang Ryu

    发明人: Kang Shin Sang Ryu

    摘要: The present invention discloses a method for forming an interlayer insulation film in a semiconductor device, comprising the steps of: sequentially forming a porous low dielectric insulation film and a capping layer on the semiconductor substrate on which a few elements of the semiconductor device have been formed; and forming damascene patterns in the porous low dielectric insulation film by an etching process, and forming a protection film for closing pores exposed during the etching process at the same time.

    摘要翻译: 本发明公开了一种在半导体器件中形成层间绝缘膜的方法,包括以下步骤:在半导体衬底上依次形成多孔低介电绝缘膜和覆盖层,半导体衬底上形成有半导体器件的几个元件 ; 并通过蚀刻工艺在多孔低介电绝缘膜中形成镶嵌图案,并且同时形成用于封闭在蚀刻工艺期间暴露的孔的保护膜。

    Method of forming trench in semiconductor device
    9.
    发明申请
    Method of forming trench in semiconductor device 有权
    在半导体器件中形成沟槽的方法

    公开(公告)号:US20050009264A1

    公开(公告)日:2005-01-13

    申请号:US10731144

    申请日:2003-12-10

    申请人: Sang Ryu

    发明人: Sang Ryu

    摘要: The present invention is provided to form a trench in a semiconductor device, wherein by performing an ion implanting process to an area of a semiconductor substrate in which the trench would be formed to cause lattice defects in the area before forming the trench, an etching speed of the area is increased in subsequent trench forming processes. As a result, it is possible to prevent micro trenches from being formed in edge portions of patterns and to suppress a micro loading effect to be generated depending upon pattern sizes.

    摘要翻译: 提供本发明以在半导体器件中形成沟槽,其中通过对形成沟槽的半导体衬底的区域执行离子注入工艺以在形成沟槽之前在区域中引起晶格缺陷,蚀刻速度 在随后的沟槽形成过程中增加了面积。 结果,可以防止在图案的边缘部分形成微沟槽并且抑制根据图案尺寸产生的微负载效应。

    Kimchi refrigerator and method for controlling the same
    10.
    发明申请
    Kimchi refrigerator and method for controlling the same 审中-公开
    泡菜冰箱及其控制方法

    公开(公告)号:US20050178131A1

    公开(公告)日:2005-08-18

    申请号:US11055202

    申请日:2005-02-11

    申请人: Sang Ryu Ji Kim

    发明人: Sang Ryu Ji Kim

    摘要: A kimchi refrigerator having sensing devices to sense whether doors of the kimchi refrigerator are opened. The kimchi refrigerator includes a main body forming an external appearance, and including storage chambers opened at one surface for storing food; doors to open and close the opened surfaces of the storage chambers; and sensing devices to sense whether the doors are opened. Since the sensing devices detect whether the doors are opened and the opening time of the doors, and lamps to illuminate the inner portions of the storage chambers and alarm devices to inform a user of the opening of the doors for a designated time or more are turned on and off based on the results detected by the sensing devices, the kimchi refrigerator compensates for the leaked cold air due to the opening of the doors.

    摘要翻译: 具有用于感测泡菜冰箱的门是否打开的感测装置的泡菜冰箱。 泡菜冰箱包括形成外观的主体,并且包括在一个表面上开放以储存食物的储存室; 用于打开和关闭存储室的打开表面的门; 以及感测装置以感测门是否打开。 由于感测装置检测到门是否被打开,门的打开时间以及照明存储室和报警装置的内部的指示时间或更长时间通知使用者打开门的指示灯 基于由感测装置检测到的结果的开/关,泡菜冰箱补偿由于打开门而导致的泄漏的冷空气。