公开(公告)号：US5958510A

公开(公告)日：1999-09-28

申请号：US583888

申请日：1996-01-08

申请人： Visweswaren Sivaramakrishnam ,  Bang C. Nguyen ,  Gayathri Rao ,  Stuardo Robles ,  Gary L. Fong ,  Vicente Lim ,  Peter W. Lee

发明人： Visweswaren Sivaramakrishnam ,  Bang C. Nguyen ,  Gayathri Rao ,  Stuardo Robles ,  Gary L. Fong ,  Vicente Lim ,  Peter W. Lee

IPC分类号： B05D7/24 ,  C23C16/44 ,  C23C16/452 ,  H01L21/312 ,  C23C16/00

CPC分类号： B05D1/60 ,  C23C16/44 ,  C23C16/452 ,  H01L21/312

摘要： A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the sublimation of stable dimer parylene material, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and for the optional blending of the resulting gaseous parylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the parylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber. An apparatus is further provided downstream of the deposition chamber to control both the flow rate or residence time of the reactive monomer in the deposition chamber as well as to control the pressure of the deposition chamber. Provision is further made for an electrical bias to permit the apparatus to function as a plasma etch chamber, for in situ plasma cleaning of the chamber between depositions, for enhancing cracking of polymerizable precursor material, for heating the walls of the chamber and for providing heat sufficient to prevent polymerization in the gas phase.

摘要翻译： 公开了用于在半导体衬底上形成薄聚合物层的方法和装置。 在一个实施方案中，该方法和装置包括稳定的二聚聚对二甲苯材料的升华，这种气态二聚体材料的热解转化为反应性单体，以及任选地将得到的气体聚对二甲苯单体与一种或多种气态形式的可聚合材料混合 与聚对二甲苯单体共聚以形成低介电常数的聚对二甲苯聚合物。 还公开了一种设备，其提供可聚合气体分布到沉积室中，用于将衬底冷却至气体冷凝以形成聚合电介质材料的温度，以加热沉积室的壁以抑制 在其上聚合的残余物的形成和积累，以及用于重新捕获离开沉积室的未反应的单体蒸气。 还在沉积室的下游设置一个装置，以控制反应性单体在沉积室中的流速或停留时间以及控制沉积室的压力。 进一步提供电偏压以允许该装置用作等离子体蚀刻室，用于沉积之间的腔室的原位等离子体清洁，用于增强可聚合前体材料的裂化，用于加热室的壁并提供热量 足以防止气相中的聚合。