公开(公告)号：US20100075060A1

公开(公告)日：2010-03-25

申请号：US12236739

申请日：2008-09-24

Applicant: PRAVIN NARWANKAR ,  Victor Pushparaj ,  Omkaram Nalamasu

Inventor： PRAVIN NARWANKAR ,  Victor Pushparaj ,  Omkaram Nalamasu

IPC: C23C4/04

CPC classification number: H01L31/1804 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C23C4/02 ,  C23C4/12 ,  C23C4/123 ,  C23C4/134 ,  C23C16/54 ,  H01L31/035254 ,  Y02E10/547 ,  Y02P70/521

Abstract: This invention provides a high volume manufacturing compatible process tool and method for integrating deposition of carbon nanotubes into device fabrication. A linear process tool for growing carbon nanotubes comprises a linear conveyor for moving a substrate through the linear process tool and a micro-plasma process unit including a plurality of micro-plasma spray guns arranged in an array, the micro-plasma process unit being positioned above the linear conveyor and configured to deposit material on the surface of the substrate as the substrate passes under the micro-plasma process unit on the linear conveyor. The micro-plasma process unit may include a first array of micro-plasma spray guns for depositing a catalyst material and a second array of micro-plasma spray guns for depositing the carbon nanotubes. A method of depositing carbon nanotubes on a substrate comprises: supplying a first precursor for a catalyst material to a first array of micro-plasma spray guns; creating a first plasma using the first array of micro-plasma spray guns and the first precursor; moving the substrate through the first plasma; activating the catalyst material; supplying a second precursor for the carbon nanotubes to a second array of micro-plasma spray guns; creating a second plasma using the second array of micro-plasma spray guns and the second precursor; moving the substrate through the second plasma.

Abstract translation: 本发明提供了用于将碳纳米管的沉积集成到器件制造中的大体积制造兼容的工艺工具和方法。 用于生长碳纳米管的线性工艺工具包括用于通过线性工艺工具移动衬底的线性输送机和包括排列成阵列的多个微等离子体喷枪的微等离子体处理单元，微等离子体处理单元被定位 在线性输送机之上，并且被配置成当基板通过在线性输送机上的微等离子体处理单元下方时将材料沉积在基板的表面上。 微等离子体处理单元可以包括用于沉积催化剂材料的第一阵列的微等离子体喷枪和用于沉积碳纳米管的微等离子体喷枪的第二阵列。 将碳纳米管沉积在基底上的方法包括：向第一阵列的微等离子体喷枪提供用于催化剂材料的第一前体; 使用第一阵列的微等离子喷枪和第一前体产生第一等离子体; 使衬底移动通过第一等离子体; 活化催化剂材料; 将第二碳纳米管前体供应到第二阵列的微等离子体喷枪; 使用第二阵列的微等离子体喷枪和第二前体产生第二等离子体; 使衬底移动通过第二等离子体。

公开(公告)号：US09305838B2

公开(公告)日：2016-04-05

申请号：US13601963

申请日：2012-08-31

Applicant: Pravin K. Narwankar ,  Joe Griffith Cruz ,  Arvind Sundarrajan ,  Murali Narasimhan ,  Subbalakshmi Sreekala ,  Victor Pushparaj

Inventor： Pravin K. Narwankar ,  Joe Griffith Cruz ,  Arvind Sundarrajan ,  Murali Narasimhan ,  Subbalakshmi Sreekala ,  Victor Pushparaj

IPC: H01L29/41 ,  H01L21/768 ,  A61Q9/04 ,  H01L23/538 ,  A61K8/46 ,  A61K8/81 ,  B82Y40/00

CPC classification number: H01L21/76877 ,  A61K8/46 ,  A61K8/8182 ,  A61K2800/884 ,  A61Q9/04 ,  B82Y40/00 ,  H01L21/76843 ,  H01L23/5384 ,  H01L29/413 ,  H01L2924/0002 ,  Y10S977/742 ,  H01L2924/00

Abstract: An integrated circuit with BEOL interconnects may comprise: a substrate including a semiconductor device; a first layer of dielectric over the surface of the substrate, the first layer of dielectric including a filled via for making electrical contact to the semiconductor device; and a second layer of dielectric on the first layer of dielectric, the second layer of dielectric including a trench running perpendicular to the longitudinal axis of the filled via, the trench being filled with an interconnect line, the interconnect line comprising cross-linked carbon nanotubes and being physically and electrically connected to the filled via. Cross-linked CNTs are grown on catalyst particles on the bottom of the trench using growth conditions including a partial pressure of precursor gas greater than the transition partial pressure at which carbon nanotube growth transitions from a parallel carbon nanotube growth mode to a cross-linked carbon nanotube growth mode.

Abstract translation: 具有BEOL互连的集成电路可以包括：包括半导体器件的衬底; 在所述衬底的表面上的第一层电介质，所述第一层电介质包括用于与所述半导体器件电接触的填充通孔; 以及在所述第一介电层上的第二电介质层，所述第二介电层包括垂直于所述填充通孔的纵向轴线延伸的沟槽，所述沟槽填充有互连线，所述互连线包含交联的碳纳米管 并且物理地和电连接到填充的通孔。 使用包括前体气体分压大于碳纳米管生长从平行碳纳米管生长模式转变为交联碳的过渡分压的生长条件，将交联的CNT生长在沟槽底部的催化剂颗粒上 纳米管生长模式。

公开(公告)号：US20130228933A1

公开(公告)日：2013-09-05

申请号：US13601963

申请日：2012-08-31

Applicant: Pravin K. Narwankar ,  Joe Griffith Cruz ,  Arvind Sundarrajan ,  Murali Narasimhan ,  Subbalakshmi Sreekala ,  Victor Pushparaj

Inventor： Pravin K. Narwankar ,  Joe Griffith Cruz ,  Arvind Sundarrajan ,  Murali Narasimhan ,  Subbalakshmi Sreekala ,  Victor Pushparaj

IPC: H01L21/768 ,  H01L23/538

CPC classification number: H01L21/76877 ,  A61K8/46 ,  A61K8/8182 ,  A61K2800/884 ,  A61Q9/04 ,  B82Y40/00 ,  H01L21/76843 ,  H01L23/5384 ,  H01L29/413 ,  H01L2924/0002 ,  Y10S977/742 ,  H01L2924/00

Abstract: An integrated circuit with BEOL interconnects may comprise: a substrate including a semiconductor device; a first layer of dielectric over the surface of the substrate, the first layer of dielectric including a filled via for making electrical contact to the semiconductor device; and a second layer of dielectric on the first layer of dielectric, the second layer of dielectric including a trench running perpendicular to the longitudinal axis of the filled via, the trench being filled with an interconnect line, the interconnect line comprising cross-linked carbon nanotubes and being physically and electrically connected to the filled via. Cross-linked CNTs are grown on catalyst particles on the bottom of the trench using growth conditions including a partial pressure of precursor gas greater than the transition partial pressure at which carbon nanotube growth transitions from a parallel carbon nanotube growth mode to a cross-linked carbon nanotube growth mode.

Abstract translation: 具有BEOL互连的集成电路可以包括：包括半导体器件的衬底; 在所述衬底的表面上的第一层电介质，所述第一层电介质包括用于与所述半导体器件电接触的填充通孔; 以及在所述第一介电层上的第二电介质层，所述第二介电层包括垂直于所述填充通孔的纵向轴线延伸的沟槽，所述沟槽填充有互连线，所述互连线包含交联的碳纳米管 并且物理地和电连接到填充的通孔。 使用包括前体气体分压大于碳纳米管生长从平行碳纳米管生长模式转变为交联碳的过渡分压的生长条件，将交联的CNT生长在沟槽底部的催化剂颗粒上 纳米管生长模式。

公开(公告)号：US08662941B2

公开(公告)日：2014-03-04

申请号：US13454317

申请日：2012-04-24

Applicant: Pravin Narwankar ,  Victor Pushparaj ,  Dieter Haas

Inventor： Pravin Narwankar ,  Victor Pushparaj ,  Dieter Haas

IPC: H01R4/16

CPC classification number: C23C16/52 ,  C23C16/44

Abstract: Apparatus for supporting the wires in a hot wire chemical vapor deposition (HWCVD) system are provided herein. In some embodiments, a terminal connector for a hot wire chemical vapor deposition (HWCVD) system may include a base; a wire clamp moveably disposed with relation to the base along an axis; a reflector shield extending from the wire clamp in a first direction along the axis; and a tensioner coupled to the base and wire clamp to bias the wire clamp in a second direction opposite the first direction.

Abstract translation: 本文提供了用于在热线化学气相沉积（HWCVD）系统中支撑电线的装置。 在一些实施例中，用于热线化学气相沉积（HWCVD）系统的终端连接器可以包括基座; 线夹，其相对于所述基部沿着轴线可移动地设置; 沿着所述轴线沿着第一方向从所述线夹延伸的反射器护罩; 以及张紧器，其联接到所述基座和线夹，以在与所述第一方向相反的第二方向偏置所述线夹。

公开(公告)号：US20120289078A1

公开(公告)日：2012-11-15

申请号：US13454317

申请日：2012-04-24

Applicant: PRAVIN NARWANKAR ,  VICTOR PUSHPARAJ ,  DIETER HAAS

Inventor： PRAVIN NARWANKAR ,  VICTOR PUSHPARAJ ,  DIETER HAAS

IPC: H01R4/28

CPC classification number: C23C16/52 ,  C23C16/44

Abstract: Apparatus for supporting the wires in a hot wire chemical vapor deposition (HWCVD) system are provided herein. In some embodiments, a terminal connector for a hot wire chemical vapor deposition (HWCVD) system may include a base; a wire clamp moveably disposed with relation to the base along an axis; a reflector shield extending from the wire clamp in a first direction along the axis; and a tensioner coupled to the base and wire clamp to bias the wire clamp in a second direction opposite the first direction.

Abstract translation: 本文提供了用于在热线化学气相沉积（HWCVD）系统中支撑电线的装置。 在一些实施例中，用于热线化学气相沉积（HWCVD）系统的终端连接器可以包括基座; 线夹，其相对于所述基部沿着轴线可移动地设置; 沿着所述轴线沿着第一方向从所述线夹延伸的反射器护罩; 以及张紧器，其联接到所述基座和线夹，以在与所述第一方向相反的第二方向偏置所述线夹。